公开(公告)号：US10573508B2

公开(公告)日：2020-02-25

申请号：US14836881

申请日：2015-08-26

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tatsuhiko Koide ,  Shinsuke Kimura ,  Yoshihiro Ogawa ,  Hisashi Okuchi ,  Hiroshi Tomita

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/311 ,  H01L21/324

Abstract: In one embodiment, a surface treatment apparatus for a semiconductor substrate includes a holding unit, a first supply unit, a second supply unit, a third supply unit, a drying treatment unit, and a removal unit. The holding unit holds a semiconductor substrate with a surface having a convex pattern formed thereon. The first supply unit supplies a chemical solution to the surface of the semiconductor substrate, to perform cleaning and oxidation. The second supply unit supplies pure water to the surface of the semiconductor substrate, to rinse the semiconductor substrate. The third supply unit supplies a water repelling agent to the surface of the semiconductor substrate, to form a water repellent protective film on the surface of the convex pattern. The drying treatment unit dries the semiconductor substrate. The removal unit removes the water repellent protective film while making the convex pattern remain.

公开(公告)号：US20180301349A1

公开(公告)日：2018-10-18

申请号：US16012866

申请日：2018-06-20

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Yuya AKEBOSHI ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yasuhito Yoshimizu ,  Hiroaki Yamada

IPC: H01L21/3213 ,  H01L21/67 ,  C23F1/40

Abstract: In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (H2O) of a first content rate to etch the first metallic film. The second liquid includes water (H2O) at a second content rate higher than the first content rate after the etching has started.

公开(公告)号：US09859111B2

公开(公告)日：2018-01-02

申请号：US14925805

申请日：2015-10-28

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Yoshihiro Ogawa ,  Tatsuhiko Koide ,  Shinsuke Kimura ,  Hisashi Okuchi ,  Hiroshi Tomita

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/02 ,  H01L21/67 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/0206 ,  H01L21/02043 ,  H01L21/02211 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/67028

Abstract: In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A removing unit removes the water repellent protective film with the convex pattern being left.

公开(公告)号：US20180082832A1

公开(公告)日：2018-03-22

申请号：US15827427

申请日：2017-11-30

Applicant: Toshiba Memory Corporation

Inventor： Yoshihiro Ogawa ,  Tatsuhiko Koide ,  Shinsuke Kimura ,  Hisashi Okuchi ,  Hiroshi Tomita

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/311

CPC classification number: H01L21/0206 ,  H01L21/02043 ,  H01L21/02211 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/67028

Abstract: In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A removing unit removes the water repellent protective film with the convex pattern being left.

公开(公告)号：US10529588B2

公开(公告)日：2020-01-07

申请号：US16012866

申请日：2018-06-20

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Yuya Akeboshi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yasuhito Yoshimizu ,  Hiroaki Yamada

IPC: H01L21/3213 ,  H01L21/67 ,  C23F1/40

Abstract: In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (H2O) of a first content rate to etch the first metallic film. The second liquid includes water (H2O) at a second content rate higher than the first content rate after the etching has started.

公开(公告)号：US20190027538A1

公开(公告)日：2019-01-24

申请号：US15892016

申请日：2018-02-08

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Keiichi Sawa ,  Kazuhisa Matsuda ,  Atsushi Takahashi ,  Takaumi Morita ,  Masayuki Tanaka ,  Shinji Mori ,  Kazuhiro Matsuo ,  Yuta Saito ,  Kenichiro Toratani ,  Hisashi Okuchi

IPC: H01L27/24 ,  G11C13/00 ,  H01L45/00

Abstract: In one embodiment, a semiconductor storage device includes a first interconnect extending in a first direction, a plurality of second interconnects extending in a second direction different from the first direction, and a plurality of first insulators provided alternately with the second interconnects. The device further includes a resistance change film provided between the first interconnect and at least one of the second interconnects and including a first metal layer or a first semiconductor layer that includes a first face provided on a first interconnect side and a second face provided on a second interconnect side, at least any of the first face and the second face having a curved plane shape.

公开(公告)号：US09991159B2

公开(公告)日：2018-06-05

申请号：US15449233

申请日：2017-03-03

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Fuyuma Ito ,  Yasuhito Yoshimizu ,  Yuya Akeboshi ,  Hisashi Okuchi ,  Masayuki Kitamura

IPC: H01L21/768 ,  H01L21/027 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76879 ,  H01L21/0272 ,  H01L21/0273 ,  H01L21/76802 ,  H01L21/76831 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53238

Abstract: According to some embodiments, a semiconductor device manufacturing method includes forming a sacrificial film on a material film. The method includes processing the sacrificial film, and forming a first groove in the sacrificial film having a first width and a second groove in the sacrificial film having a second width larger than the first width, the material film defining a base of the first groove and a base of the second groove. The method includes forming a catalyst layer on the sacrificial film, and on the base of the first groove and the base of the second groove. The method includes forming a first metal film having a thickness equal to or larger than half the first width and smaller than half the second width on the catalyst layer by plating. The method includes removing at least a portion of the first metal film in the second groove while leaving a portion of the first metal film in the first groove unremoved. The method includes removing the catalyst layer on the sacrificial film while leaving the catalyst layer on the base of the second groove unremoved. The method includes forming a second metal film in the second groove by the plating.

公开(公告)号：US09991111B2

公开(公告)日：2018-06-05

申请号：US15827427

申请日：2017-11-30

Applicant: Toshiba Memory Corporation

Inventor： Yoshihiro Ogawa ,  Tatsuhiko Koide ,  Shinsuke Kimura ,  Hisashi Okuchi ,  Hiroshi Tomita

IPC: C23F1/00 ,  H01L21/306 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01L21/0206 ,  H01L21/02043 ,  H01L21/02211 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/67028

Abstract: In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A removing unit removes the water repellent protective film with the convex pattern being left.

公开(公告)号：US10522596B2

公开(公告)日：2019-12-31

申请号：US15892016

申请日：2018-02-08

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Keiichi Sawa ,  Kazuhisa Matsuda ,  Atsushi Takahashi ,  Takaumi Morita ,  Masayuki Tanaka ,  Shinji Mori ,  Kazuhiro Matsuo ,  Yuta Saito ,  Kenichiro Toratani ,  Hisashi Okuchi

IPC: H01L27/24 ,  G11C13/00 ,  H01L27/108 ,  H01L45/00

Abstract: In one embodiment, a semiconductor storage device includes a first interconnect extending in a first direction, a plurality of second interconnects extending in a second direction different from the first direction, and a plurality of first insulators provided alternately with the second interconnects. The device further includes a resistance change film provided between the first interconnect and at least one of the second interconnects and including a first metal layer or a first semiconductor layer that includes a first face provided on a first interconnect side and a second face provided on a second interconnect side, at least any of the first face and the second face having a curved plane shape.

公开(公告)号：US10014186B2

公开(公告)日：2018-07-03

申请号：US14989241

申请日：2016-01-06

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Yuya Akeboshi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yasuhito Yoshimizu ,  Hiroaki Yamada

IPC: H01L21/302 ,  H01L21/3213 ,  H01L21/67 ,  C23F1/40

CPC classification number: H01L21/32134 ,  C23F1/40 ,  H01L21/67075 ,  H01L21/6708

Abstract: In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (H2O) of a first content rate to etch the first metallic film. The second liquid includes water (H2O) at a second content rate higher than the first content rate after the etching has started.