公开(公告)号：US20190279932A1

公开(公告)日：2019-09-12

申请号：US16103106

申请日：2018-08-14

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Satoshi WAKATSUKI ,  Masayuki KITAMURA ,  Takeshi ISHIZAKI ,  Hiroshi ITOKAWA ,  Daisuke IKENO ,  Kei WATANABE ,  Atsuko SAKATA

IPC: H01L23/522 ,  H01L27/1157 ,  H01L27/11582 ,  H01L23/532 ,  H01L21/28 ,  H01L21/768

Abstract: In one embodiment, a semiconductor device includes a first insulator. The device further includes a metal layer that includes a first metal layer provided on a surface of the first insulator, and a second metal layer provided on a surface of the first metal layer and containing a first metallic element and oxygen or containing aluminum and nitrogen, or includes a third metal layer provided on the surface of the first insulator and containing a second metallic element, aluminum and nitrogen. The device further includes an interconnect material layer provided on a surface of the metal layer.

公开(公告)号：US20180090438A1

公开(公告)日：2018-03-29

申请号：US15449654

申请日：2017-03-03

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Masayuki KITAMURA ,  Atsuko SAKATA

IPC: H01L23/528 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/5283 ,  H01L21/76804 ,  H01L21/76826 ,  H01L21/76846 ,  H01L21/76879 ,  H01L21/76883 ,  H01L23/53266 ,  H01L23/53295

Abstract: According to some embodiments, a semiconductor device includes a substrate and an insulating film that is provided on the substrate. The device further includes a contact plug which includes a barrier metal layer provided in the insulating film, and a plug material layer provided in the insulating film, the barrier metal layer disposed between the plug material layer and the insulating film. The barrier metal layer includes at least a first layer including a first metal element and nitrogen, and a second layer including a second metal element different from the first metal element, and nitrogen.