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25 条记录 (耗时 0.031 秒)

    Silicon wet etching method using parylene mask and method of manufacturing nozzle plate of inkjet printhead using the same
    11.
    发明申请
    Silicon wet etching method using parylene mask and method of manufacturing nozzle plate of inkjet printhead using the same 审中-公开
    使用聚对二苯乙烯掩模的硅湿式蚀刻方法和使用其制造喷墨打印头的喷嘴板的方法

    公开(公告)号：US20070134928A1

    公开(公告)日：2007-06-14

    申请号：US11505416

    申请日：2006-08-17

    申请人： Jae-chang Lee ,  Chang-seung Lee ,  Jae-woo Chung ,  Duck-su Kim ,  Kyo-yeol Lee

    发明人： Jae-chang Lee ,  Chang-seung Lee ,  Jae-woo Chung ,  Duck-su Kim ,  Kyo-yeol Lee

    IPC分类号： H01L21/302

    CPC分类号： B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2002/14411

    摘要： A silicon wet etching method to form at least two elements having different shapes in a silicon substrate using at least two wet etching processes includes forming a first etch mask made of parylene on a surface of the silicon substrate, forming a first element in the substrate by wet etching the silicon substrate for a first time using the first etch mask, forming a second etch mask made of a silicon oxide layer on the surface of the silicon substrate, and forming a second element by wet etching the silicon substrate for a second time using the second etch mask.

    摘要翻译： 使用至少两个湿蚀刻工艺在硅衬底中形成具有不同形状的至少两种元件的硅湿式蚀刻方法包括在硅衬底的表面上形成由聚对二甲苯制成的第一蚀刻掩模，在衬底中形成第一元件，通过 使用第一蚀刻掩模第一次湿蚀刻硅衬底，在硅衬底的表面上形成由氧化硅层制成的第二蚀刻掩模，并且通过湿法蚀刻硅衬底第二次来形成第二元件，第二次使用 第二蚀刻掩模。

    Method for fabricating semiconductor light emitting device
    15.
    发明授权
    Method for fabricating semiconductor light emitting device 有权

    公开(公告)号：US06551848B2

    公开(公告)日：2003-04-22

    申请号：US10096919

    申请日：2002-03-14

    申请人： Joon-seop Kwak ,  Kyo-yeol Lee

    发明人： Joon-seop Kwak ,  Kyo-yeol Lee

    IPC分类号： H01L2100

    CPC分类号： H01L33/0079

    摘要： A method for fabricating a semiconductor light emitting device is provided. The method involves: forming a light emitting construct including a p-type electrode on a n-type substrate; etching a bottom surface of the n-type substrate; and forming an n-type electrode on the etched bottom surface of the n-type substrate. The bottom surface of the n-type substrate is wet or dry etched. The bottom surface of the n-type substrate is free from damage so that stable attachment of the etched bottom surface of the n-type substrate is ensured with improved properties of the light emitting device which may be a semicoductor laser diode.

    Pyrolysis furnace having gas flowing path controller
    16.
    发明授权
    Pyrolysis furnace having gas flowing path controller 失效
    具有气体流路控制器的热解炉

    公开(公告)号：US07632093B2

    公开(公告)日：2009-12-15

    申请号：US11218465

    申请日：2005-09-06

    申请人： Kyo-yeol Lee ,  Eun-hye Lee

    发明人： Kyo-yeol Lee ,  Eun-hye Lee

    IPC分类号： F27B5/14

    CPC分类号： C01B33/029

    摘要： Provided is a pyrolysis furnace having a gas flowing path controller with an improved structure. The pyrolysis furnace includes: a silicon substrate; a main body of the pyrolysis furnace; a heating unit that is formed around the main body and controls the temperature of the main body; at least one gas supplying tube through which a gas flows into the main body; and a gas flowing path controller that is installed inside the main body and controls the flow of the gas. As a result, controlling and manufacturing of small-sized nanoparticles with excellent characteristics is possible.

    摘要翻译： 具有具有改进结构的气体流路控制器的热解炉。 热解炉包括：硅衬底; 热解炉的主体; 加热单元，形成在主体周围并控制主体的温度; 至少一个气体供给管，气体通过该气体供给管流入主体; 以及气体流路控制器，其安装在主体内部并控制气体的流动。 因此，可以控制和制造具有优异特性的小尺寸纳米颗粒。

    Air-to-fuel ratio sensor
    18.
    发明授权
    Air-to-fuel ratio sensor 失效
    空气 - 燃料比传感器

    公开(公告)号：US6077409A

    公开(公告)日：2000-06-20

    申请号：US897667

    申请日：1997-07-21

    申请人： Jong-heun Lee ,  Kyo-yeol Lee

    发明人： Jong-heun Lee ,  Kyo-yeol Lee

    IPC分类号： G01N27/419 ,  G01N27/407

    CPC分类号： G01N27/4071

    摘要： An air-to-fuel (A/F) ratio sensor includes an insulation layer, two solid electrolyte layers made of a porous composite ceramic formed at both sides of the insulation layer, each solid electrolyte layer having an internal electrode layer on its boundary surface with the insulation layer and an external electrode layer on its other surface, and a diffusion barrier layer made of a porous composite ceramic, covering one of the external electrode layers. The A/F ratio sensor provides a linear A/F ratio signal by controlling only a pumping current for a reference partial pressure of oxygen. Thus, the A/F ratio sensor operates by a simpler driving principle, thereby simplifying the driving circuit thereof.

    摘要翻译： 空气 - 燃料（A / F）比传感器包括绝缘层，形成在绝缘层两侧的由多孔复合陶瓷制成的两个固体电解质层，每个固体电解质层在其边界面上具有内部电极层 其绝缘层和其另一表面上的外部电极层，以及覆盖一个外部电极层的由多孔复合陶瓷制成的扩散阻挡层。 A / F比传感器通过仅控制用于参考氧分压的泵浦电流来提供线性A / F比信号。 因此，A / F比传感器通过更简单的驱动原理操作，从而简化了其驱动电路。

    Nonvolatile memory device and method of manufacturing the same
    20.
    发明授权
    Nonvolatile memory device and method of manufacturing the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US07504280B2

    公开(公告)日：2009-03-17

    申请号：US11357221

    申请日：2006-02-21

    申请人： Yoon-ho Khang ,  Kyo-yeol Lee ,  Eun-hye Lee ,  Joo-hyun Lee

    发明人： Yoon-ho Khang ,  Kyo-yeol Lee ,  Eun-hye Lee ,  Joo-hyun Lee

    IPC分类号： H01L51/40

    CPC分类号： H01L21/28273 ,  B82Y10/00 ,  H01L29/42332 ,  H01L29/7881 ,  Y10S438/962

    摘要： Provided is a nonvolatile memory device and a method of manufacturing the same. The nonvolatile memory device includes a semiconductor substrate on which a source, a drain, and a channel region are formed, a tunneling oxide film formed on the channel region, a floating gate formed of a fullerene material on the tunneling oxide, a blocking oxide film formed on the floating gate, and a gate electrode formed on the blocking oxide film.

    摘要翻译： 提供一种非易失性存储器件及其制造方法。 非易失性存储器件包括其上形成有源极，漏极和沟道区的半导体衬底，在沟道区上形成的隧道氧化物膜，在隧道氧化物上由富勒烯材料形成的浮动栅，阻挡氧化膜 形成在浮置栅极上，以及形成在该阻挡氧化膜上的栅电极。