公开(公告)号：US20220404705A1

公开(公告)日：2022-12-22

申请号：US17713823

申请日：2022-04-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren ZI ,  Ming-Hui WENG ,  Ching-Yu CHANG

IPC: G03F7/11 ,  H01L21/027 ,  H01L21/311 ,  H01L21/033

Abstract: A method for reducing resist consumption (RRC) is provided. The method includes treating a surface of a substrate using a RRC composition and forming a photoresist layer comprising a metal-containing material on the RRC composition treated surface. The RRC composition includes a solvent and an acid or a base. The solvent has a dispersion parameter between 10 and 25. The acid has an acid dissociation constant between -20 and 6.8. The base having an acid dissociation constant between 7.2 and 45.

公开(公告)号：US20210349391A1

公开(公告)日：2021-11-11

申请号：US16870704

申请日：2020-05-08

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： An-Ren ZI ,  Chin-Hsiang LIN ,  Ching-Yu CHANG

IPC: G03F7/11 ,  G03F7/16 ,  G03F7/038 ,  G03F7/039 ,  G03F7/004 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  H01L21/027

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist under-layer including a photoresist under-layer composition over a semiconductor substrate, and forming a photoresist layer including a photoresist composition over the photoresist under-layer. The photoresist layer is selectively exposed to actinic radiation and the photoresist layer is developed to form a pattern in the photoresist layer. The photoresist under-layer composition includes a polymer having pendant acid-labile groups, a polymer having crosslinking groups or a polymer having pendant carboxylic acid groups, an acid generator, and a solvent. The photoresist composition includes a polymer, a photoactive compound, and a solvent.

公开(公告)号：US20210074538A1

公开(公告)日：2021-03-11

申请号：US16991996

申请日：2020-08-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： An-Ren ZI ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: H01L21/027 ,  H01L21/67

Abstract: A method of manufacturing a semiconductor device includes forming a first protective layer over an edge portion of a first main surface of a semiconductor substrate. A metal-containing photoresist layer is formed over the first main surface of the semiconductor substrate. The first protective layer is removed, and the metal-containing photoresist layer is selectively exposed to actinic radiation. A second protective layer is formed over the edge portion of the first main surface of the semiconductor substrate. The selectively exposed photoresist layer is developed to form a patterned photoresist layer, and the second protective layer is removed.

公开(公告)号：US20200073238A1

公开(公告)日：2020-03-05

申请号：US16522135

申请日：2019-07-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： An-Ren ZI ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039

Abstract: A photoresist composition comprises a polymer resin, a photoactive compound, an organometallic compound, an enhancement additive, and a first solvent. The enhancement additive is an ionic surfactant, a non-ionic surfactant, or a second solvent having a boiling point of greater than 150° C.

公开(公告)号：US20190384171A1

公开(公告)日：2019-12-19

申请号：US16197349

申请日：2018-11-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： An-Ren ZI ,  Chin-Hsiang LIN ,  Ching-Yu CHANG

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

Abstract: A photoresist composition includes a photoresist material including metal oxide nanoparticles and a ligand, and an acid having an acid dissociation constant, pKa, of −15 pKa>9.

公开(公告)号：US20190155156A1

公开(公告)日：2019-05-23

申请号：US16021665

申请日：2018-06-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren ZI ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: G03F7/11 ,  H01L21/027 ,  G03F7/004 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  G03F7/038 ,  G03F7/09 ,  H01L21/266 ,  H01L29/66

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a material layer over a substrate and forming a assist layer over the material layer. The assist layer includes a polymer backbone, an acid labile group (ALG) bonded to the polymer backbone, and a floating group bonded to the polymer backbone. The floating group includes carbon fluoride (CxFy). The method also includes forming a resist layer over the assist layer and patterning the resist layer.

公开(公告)号：US20190096675A1

公开(公告)日：2019-03-28

申请号：US16053463

申请日：2018-08-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren ZI ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: H01L21/266 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  G03F7/32

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a material layer over a substrate and forming a resist layer over the material layer. The resist layer includes an inorganic material and an auxiliary. The inorganic material includes a plurality of metallic cores and a plurality of first linkers bonded to the metallic cores. The method includes exposing a portion of the resist layer. The resist layer includes an exposed region and an unexposed region. In the exposed region, the auxiliary reacts with the first linkers. The method also includes removing the unexposed region of the resist layer by using a developer to form a patterned resist layer. The developer includes a ketone-based solvent having a formula (a), wherein R1 is linear or branched C1-C5 alkyl, and R2 is linear or branched C3-C9 alkyl.

公开(公告)号：US20230012705A1

公开(公告)日：2023-01-19

申请号：US17581671

申请日：2022-01-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren ZI ,  Yahru CHENG ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: H01L21/027 ,  H01L21/308

Abstract: A method for forming a semiconductor device is provided. The method includes applying a photoresist composition over a substrate, thereby forming a photoresist layer over the substrate; performing a first baking process to the photoresist layer; exposing the photoresist layer to an extreme ultraviolet (EUV) radiation, thereby forming a pattern therein; performing a second baking process to the photoresist layer; and developing the photoresist layer having the pattern therein using a developer, thereby forming a patterned photoresist layer. The first baking process and the second baking process are conducted under an ambient atmosphere having a humidity level ranging from 55% to 100%.

公开(公告)号：US20220187711A1

公开(公告)日：2022-06-16

申请号：US17689103

申请日：2022-03-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren ZI ,  Wei-Han Lai ,  Ching-Yu Chang

IPC: G03F7/20 ,  G03F7/16 ,  G03F7/09

Abstract: A method includes providing a layered structure on a substrate, the layered structure including a bottom layer formed over the substrate, a hard mask layer formed over the bottom layer, a material layer formed over the hard mask layer, and a photoresist layer formed over the material layer, exposing the photoresist layer to a radiation source, developing the photoresist layer, where the developing removes portions of the photoresist layer and the material layer in a single step without substantially removing portions of the hard mask layer, and etching the hard mask layer using the photoresist layer as an etch mask. The material layer may include acidic moieties and/or acid-generating molecules. The material layer may also include photo-sensitive moieties and crosslinking agents.

公开(公告)号：US20210271166A1

公开(公告)日：2021-09-02

申请号：US17150309

申请日：2021-01-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： An-Ren ZI ,  Ching-Yu CHANG

IPC: G03F7/09 ,  G03F7/039 ,  G03F7/26 ,  G03F7/004 ,  C08L101/02

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist underlayer including a photoresist underlayer composition over a semiconductor substrate and forming a photoresist layer comprising a photoresist composition over the photoresist underlayer. The photoresist layer is selectively exposed to actinic radiation, and the photoresist layer is developed to form a pattern in the photoresist layer. The photoresist underlayer composition includes: a first polymer having one or more of pendant acid-labile groups and pendant epoxy groups, a second polymer having one or more crosslinking groups, an acid generator, a quencher or photodecomposable base, and a solvent. The photoresist underlayer composition includes 0 wt. % to 10 wt. % of the quencher or photodecomposable base based on a total weight of the first and second polymers.