公开(公告)号：US20210336034A1

公开(公告)日：2021-10-28

申请号：US16937164

申请日：2020-07-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Bone-Fong Wu ,  Chih-Hao Yu ,  Chia-Pin Lin

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L29/423

Abstract: A semiconductor device according to the present disclosure includes a channel member including a first connection portion, a second connection portion and a channel portion disposed between the first connection portion and the second connection portion, a first inner spacer feature disposed over and in contact with the first connection portion, a second inner spacer feature disposed under and in contact with the first connection portion, and a gate structure wrapping around the channel portion of the channel member. The channel member further includes a first ridge on a top surface of the channel member and disposed at an interface between the channel portion and the first connection portion. The first ridge partially extends between the first inner spacer feature and the gate structure.

公开(公告)号：US10741450B2

公开(公告)日：2020-08-11

申请号：US15892593

申请日：2018-02-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chang-Yun Chang ,  Bone-Fong Wu ,  Ming-Chang Wen ,  Ya-Hsiu Lin

IPC: H01L21/8234 ,  H01L21/311 ,  H01L29/08 ,  H01L21/02 ,  H01L27/088 ,  H01L29/06 ,  H01L29/66 ,  H01L21/324 ,  H01L21/762 ,  H01L21/3105 ,  H01L21/027 ,  H01L21/265

Abstract: A method of forming a semiconductor device includes forming a gate structure over first and second fins over a substrate; forming an interlayer dielectric layer surrounding first and second fins; etching a first trench in the interlayer dielectric layer between the first and second fins uncovered by the gate structure; forming a helmet layer in the first trench; and filling the first trench with a dielectric feature.

公开(公告)号：US20190267372A1

公开(公告)日：2019-08-29

申请号：US15904585

申请日：2018-02-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Chang Wen ,  Chang-Yun Chang ,  Hsien-Chin Lin ,  Bone-Fong Wu ,  Ya-Hsiu Lin

IPC: H01L27/088 ,  H01L29/423 ,  H01L27/02 ,  H01L29/49 ,  H01L21/8234 ,  H01L29/06 ,  H01L21/3213 ,  H01L29/66 ,  H01L21/027 ,  H01L21/28

Abstract: A semiconductor device includes first and second transistors each having a high-k metal gate disposed over a respective channel region of the transistors. The semiconductor device further includes first and second dielectric features in physical contact with an end of the respective high-k metal gates. The first and second transistors are of a same conductivity type. The two high-k metal gates have a same number of material layers. The first transistor's threshold voltage is different from the second transistor's threshold voltage, and at least one of following is true: the two high-k metal gates have different widths, the first and second dielectric features have different distances from respective channel regions of the two transistors, and the first and second dielectric features have different dimensions.