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公开(公告)号：US20230081170A1
公开(公告)日：2023-03-16
申请号：US18051107
申请日：2022-10-31
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Alexander KALNITSKY , Yi-Shao LIU , Kai-Chih LIANG , Chia-Hua CHU , Chun-Ren CHENG , Chun-Wen CHENG
IPC: G01N27/414 , H01L51/00 , H01L21/84 , H01L27/12
Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.
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公开(公告)号：US20200150080A1
公开(公告)日：2020-05-14
申请号：US16727738
申请日：2019-12-26
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Alexander KALNITSKY , Yi-Shao LIU , Kai-Chih LIANG , Chia-Hua CHU , Chun-Ren CHENG , Chun-Wen CHENG
IPC: G01N27/414 , H01L51/00 , H01L21/84 , H01L27/12
Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.
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公开(公告)号：US20170248536A1
公开(公告)日：2017-08-31
申请号：US15053906
申请日：2016-02-25
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Tung-Tsun CHEN , Chia-Hua CHU , Jui-Cheng HUANG , Chun-Wen CHENG , Cheng-Hsiang HSIEH
IPC: G01N27/22
CPC classification number: G01N27/223 , G01N27/226
Abstract: A micro-electro mechanical system (MEMS) humidity sensor includes a first substrate, a second substrate and a sensing structure. The second substrate is substantially parallel to the first substrate. The sensing structure is between the first substrate and the second substrate, and bonded to a portion of the first substrate and a portion of the second substrate, in which the second substrate includes a conductive layer facing the sensing structure, and a first space between the first substrate and the sensing structure is communicated with or isolated from outside, and a second space between the conductive layer and the sensing structure is communicated with an atmosphere, and the sensing structure, the second space and the conductive layer constitute a capacitor configured to measure permittivity of the atmosphere, and humidity of the atmosphere is derived from the permittivity of the atmosphere, pressure of the atmosphere and temperature.
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Patent Agency Ranking
14.发明申请公开(公告)号：US20150284240A1
公开(公告)日：2015-10-08
申请号：US14276295
申请日：2014-05-13
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chia-Hua CHU , Chun-Wen CHENG , Shang-Ying TSAI , Chin-Wei LIANG
CPC classification number: B81B7/0041 , B81B7/02 , B81C1/00238 , B81C1/00293
Abstract: A micro-electro mechanical system (MEMS) device is provided. The MEMS device includes a cap substrate and a MEMS substrate bonded with the cap substrate. The MEMS substrate includes a first movable element and a second movable element. The MEMS device also includes a first closed chamber between the MEMS substrate and the cap substrate, and the first movable element is in the first closed chamber. The MEMS device further includes an outgassing layer in the first closed chamber. In addition, the MEMS device includes a second closed chamber between the MEMS substrate and the cap substrate, and the second movable element is in the second closed chamber.
Abstract translation: 提供了微机电系统（MEMS）装置。 MEMS器件包括盖衬底和与衬底接合的MEMS衬底。 MEMS基板包括第一可移动元件和第二可移动元件。 MEMS器件还包括在MEMS衬底和盖衬底之间的第一闭合腔，并且第一可移动元件位于第一封闭腔室中。 MEMS装置还包括在第一封闭室中的除气层。 另外，MEMS器件包括在MEMS衬底和盖衬底之间的第二闭合腔，并且第二可移动元件位于第二闭合腔中。
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15.发明申请公开(公告)号：US20150137280A1
公开(公告)日：2015-05-21
申请号：US14525827
申请日：2014-10-28
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Chia-Hua CHU , Chun-Wen CHENG , Shang-Ying TSAI , Chin-Wei LIANG
CPC classification number: B81B7/0038 , B81B7/02 , B81C1/00238
Abstract: A structure and a formation method of a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a cap substrate and a MEMS substrate bonded with the cap substrate. The MEMS substrate includes a first movable element and a second movable element. The MEMS device also includes a first enclosed space surrounded by the MEMS substrate and the cap substrate, and the first movable element is in the first enclosed space. The MEMS device further includes a second enclosed space surrounded by the MEMS substrate and the cap substrate, and the second movable element is in the second enclosed space. In addition, the MEMS device includes a pressure-changing layer in the first enclosed space.
Abstract translation: 提供了微机电系统（MEMS）装置的结构和形成方法。 MEMS器件包括盖衬底和与衬底接合的MEMS衬底。 MEMS基板包括第一可移动元件和第二可移动元件。 MEMS器件还包括由MEMS衬底和盖衬底围绕的第一封闭空间，第一可移动元件位于第一封闭空间中。 MEMS器件还包括由MEMS衬底和盖衬底围绕的第二封闭空间，并且第二可移动元件位于第二封闭空间中。 此外，MEMS器件在第一封闭空间中包括压力变化层。
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公开(公告)号：US20150137276A1
公开(公告)日：2015-05-21
申请号：US14084161
申请日：2013-11-19
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Wen CHENG , Chia-Hua CHU
CPC classification number: B81C1/00285 , B81B7/0038 , B81B7/02 , B81B2201/0264 , B81C1/00238 , B81C1/00293
Abstract: Embodiments of mechanisms for forming a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a CMOS substrate, a cap substrate, and a MEMS substrate bonded between the CMOS substrate and the cap substrate. The MEMS substrate includes a first movable element and a second movable element. The MEMS device also includes a first closed chamber and a second closed chamber, which are between the MEMS substrate and the cap substrate. The first movable element is in the first closed chamber, and the second movable element is in the second closed chamber. A first pressure of the first closed chamber is higher than a second pressure of the second closed chamber.
Abstract translation: 提供了用于形成微机电系统（MEMS）装置的机构的实施例。 MEMS器件包括CMOS衬底，帽衬底和结合在CMOS衬底和帽衬底之间的MEMS衬底。 MEMS基板包括第一可移动元件和第二可移动元件。 MEMS器件还包括位于MEMS衬底和盖衬底之间的第一封闭腔室和第二封闭腔室。 第一可移动元件位于第一封闭室中，第二可移动元件位于第二封闭室中。 第一封闭室的第一压力高于第二封闭室的第二压力。
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公开(公告)号：US20190306633A1
公开(公告)日：2019-10-03
申请号：US16174159
申请日：2018-10-29
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Chen Hsiung YANG , Chun-Wen CHENG , Chia-Hua CHU , En-Chan CHEN
Abstract: A micro electro mechanical system (MEMS) microphone includes a first membrane, a second membrane, a third membrane disposed between the first membrane and the second membrane, a first cavity disposed between the first membrane and the third membrane and surrounded by a first wall, a second cavity disposed between the second membrane and the third membrane and surrounded by a second wall, and one or more first supports disposed in the first cavity and connecting the first membrane and the third membrane.
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公开(公告)号：US20170197821A1
公开(公告)日：2017-07-13
申请号：US15472431
申请日：2017-03-29
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Chia-Hua CHU , Chun-Wen CHENG
IPC: B81C1/00
Abstract: A method for forming a micro-electro mechanical system (MEMS) device is provided. The method includes forming a first dielectric layer over a semiconductor layer and forming a blocking layer over the first dielectric layer. The method also includes bonding a CMOS substrate with the blocking layer, and the CMOS substrate includes a second dielectric layer, and the blocking layer is configured to block gas coming from the second dielectric layer. The method further includes partially removing the first dielectric layer to form a cavity between the semiconductor layer and the blocking layer. A portion of the semiconductor layer above the cavity becomes a movable element. In addition, the method includes sealing the cavity such that a closed chamber is formed to surround the movable element.
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