公开(公告)号：US20230081170A1

公开(公告)日：2023-03-16

申请号：US18051107

申请日：2022-10-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Alexander KALNITSKY ,  Yi-Shao LIU ,  Kai-Chih LIANG ,  Chia-Hua CHU ,  Chun-Ren CHENG ,  Chun-Wen CHENG

IPC: G01N27/414 ,  H01L51/00 ,  H01L21/84 ,  H01L27/12

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.

公开(公告)号：US20200150080A1

公开(公告)日：2020-05-14

申请号：US16727738

申请日：2019-12-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Alexander KALNITSKY ,  Yi-Shao LIU ,  Kai-Chih LIANG ,  Chia-Hua CHU ,  Chun-Ren CHENG ,  Chun-Wen CHENG

IPC: G01N27/414 ,  H01L51/00 ,  H01L21/84 ,  H01L27/12

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.

公开(公告)号：US20210072181A1

公开(公告)日：2021-03-11

申请号：US17087112

申请日：2020-11-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wen CHENG ,  Yi-Shao LIU ,  Fei-Lung LAI

IPC: G01N27/414 ,  H01L23/34 ,  H01L29/66 ,  H01L29/78

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a substrate, a transistor structure, an isolation layer, an interface layer in an opening of the isolation layer, and a metal crown structure over the interface layer. The interface layer and the metal crown structure are disposed on opposite side of the transistor from a gate structure.

公开(公告)号：US20180313783A1

公开(公告)日：2018-11-01

申请号：US16021077

申请日：2018-06-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Wen CHENG ,  Yi-Shao LIU ,  Fei-Lung LAI

IPC: G01N27/414

CPC classification number: G01N27/4145

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a substrate, a transistor structure, an isolation layer, an interface layer in an opening of the isolation layer, and a metal crown structure over the interface layer. The interface layer and the metal crown structure are disposed on opposite side of the transistor from a gate structure.

公开(公告)号：US20170315085A1

公开(公告)日：2017-11-02

申请号：US15649963

申请日：2017-07-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Shao LIU ,  Chun-Ren CHENG ,  Ching-Ray CHEN ,  Yi-Hsien CHANG ,  Fei-Lung LAI ,  Chun-Wen CHENG

IPC: G01N27/414 ,  H01L21/311 ,  H01L29/66

CPC classification number: G01N27/4145 ,  G01N27/4148 ,  H01L21/31105 ,  H01L27/088 ,  H01L29/66477

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.

公开(公告)号：US20230375499A1

公开(公告)日：2023-11-23

申请号：US18228288

申请日：2023-07-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ta-Chuan LIAO ,  Chien-Kuo YANG ,  Yi-Shao LIU ,  Tung-Tsun CHEN ,  Chan-Ching LIN ,  Jui-Cheng HUANG ,  Felix Ying-Kit TSUI ,  Jing-Hwang YANG

IPC: G01N27/414

CPC classification number: G01N27/4145

Abstract: A biological device includes a substrate, a gate electrode, and a sensing well. The substrate includes a source region, a drain region, a channel region, a body region, and a sensing region. The channel region is disposed between the source region and the drain region. The sensing region is at least disposed between the channel region and the body region. The gate electrode is at least disposed on or above the channel region of the substrate. The sensing well is at least disposed adjacent to the sensing region.

公开(公告)号：US20200072789A1

公开(公告)日：2020-03-05

申请号：US16679015

申请日：2019-11-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Shao LIU ,  Chun-Ren Cheng ,  Ching-Ray Chen ,  Yi-Hsien Chang ,  Fei-Lung Lai ,  Chun-Wen Cheng

IPC: G01N27/414 ,  H01L21/311 ,  H01L27/088 ,  H01L29/66

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.

公开(公告)号：US20160320335A1

公开(公告)日：2016-11-03

申请号：US14700133

申请日：2015-04-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ta-Chuan LIAO ,  Chien-Kuo YANG ,  Yi-Shao LIU ,  Tung-Tsun CHEN ,  Chan-Ching LIN ,  Jui-Cheng HUANG ,  Felix Ying-Kit TSUI ,  Jing-Hwang YANG

IPC: G01N27/414

CPC classification number: G01N27/4145

Abstract: A biological device includes a substrate, a gate electrode, and a sensing well. The substrate includes a source region, a drain region, a channel region, a body region, and a sensing region. The channel region is disposed between the source region and the drain region. The sensing region is at least disposed between the channel region and the body region. The gate electrode is at least disposed on or above the channel region of the substrate. The sensing well is at least disposed adjacent to the sensing region.

Abstract translation: 生物装置包括衬底，栅电极和感测阱。 衬底包括源极区，漏极区，沟道区，体区和感测区。 沟道区域设置在源极区域和漏极区域之间。 感测区域至少设置在通道区域和身体区域之间。 栅电极至少设置在衬底的沟道区上或上。 感测井至少设置在感测区域附近。