公开(公告)号：US20230296701A1

公开(公告)日：2023-09-21

申请号：US18324368

申请日：2023-05-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jui-Fen Chien ,  Wei-Gang Chiu ,  Tsann Lin

IPC: G01R33/09 ,  G11C11/16 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

CPC classification number: G01R33/093 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  H10B61/22 ,  H10N50/01 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

Abstract: In an embodiment, a device includes: a magnetoresistive random access memory cell including: a bottom electrode; a reference layer over the bottom electrode; a tunnel barrier layer over the reference layer, the tunnel barrier layer including a first composition of magnesium and oxygen; a free layer over the tunnel barrier layer, the free layer having a lesser coercivity than the reference layer; a cap layer over the free layer, the cap layer including a second composition of magnesium and oxygen, the second composition of magnesium and oxygen having a greater atomic concentration of oxygen and a lesser atomic concentration of magnesium than the first composition of magnesium and oxygen; and a top electrode over the cap layer.

公开(公告)号：US11088257B2

公开(公告)日：2021-08-10

申请号：US16884053

申请日：2020-05-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jui-Fen Chien ,  Hsiao-Kuan Wei ,  Hsien-Ming Lee ,  Chin-You Hsu

IPC: H01L27/092 ,  H01L29/49 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L21/28 ,  H01L29/165

Abstract: Provided is a semiconductor device including a first n-type fin field effect transistor (FinFET) and a second n-type FinFET. The first FinFET includes a first work function layer. The first work function layer includes a first portion of a first layer. The second n-type FinFET includes a second work function layer. The second work function layer includes a second portion of the first layer and a first portion of a second layer underlying the second portion of the first layer. A thickness of the first work function layer is less than a thickness of the second work function layer. A method of manufacturing the semiconductor device is also provided.