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公开(公告)号：US12298362B2
公开(公告)日：2025-05-13
申请号：US18324368
申请日：2023-05-26
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Jui-Fen Chien , Wei-Gang Chiu , Tsann Lin
Abstract: In an embodiment, a device includes: a magnetoresistive random access memory cell including: a bottom electrode; a reference layer over the bottom electrode; a tunnel barrier layer over the reference layer, the tunnel barrier layer including a first composition of magnesium and oxygen; a free layer over the tunnel barrier layer, the free layer having a lesser coercivity than the reference layer; a cap layer over the free layer, the cap layer including a second composition of magnesium and oxygen, the second composition of magnesium and oxygen having a greater atomic concentration of oxygen and a lesser atomic concentration of magnesium than the first composition of magnesium and oxygen; and a top electrode over the cap layer.
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公开(公告)号：US20230296701A1
公开(公告)日：2023-09-21
申请号：US18324368
申请日：2023-05-26
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Jui-Fen Chien , Wei-Gang Chiu , Tsann Lin
CPC classification number: G01R33/093 , G11C11/161 , G11C11/1655 , G11C11/1657 , H10B61/22 , H10N50/01 , H10N50/10 , H10N50/80 , H10N50/85
Abstract: In an embodiment, a device includes: a magnetoresistive random access memory cell including: a bottom electrode; a reference layer over the bottom electrode; a tunnel barrier layer over the reference layer, the tunnel barrier layer including a first composition of magnesium and oxygen; a free layer over the tunnel barrier layer, the free layer having a lesser coercivity than the reference layer; a cap layer over the free layer, the cap layer including a second composition of magnesium and oxygen, the second composition of magnesium and oxygen having a greater atomic concentration of oxygen and a lesser atomic concentration of magnesium than the first composition of magnesium and oxygen; and a top electrode over the cap layer.
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公开(公告)号：US20210036055A1
公开(公告)日：2021-02-04
申请号：US16739016
申请日：2020-01-09
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Ji-Feng Ying , Jhong-Sheng Wang , Tsann Lin
IPC: H01L27/22 , H01L23/528 , H01L43/12 , H01L43/02 , G11C11/16 , H01L23/522 , H01F10/32 , H01F41/32
Abstract: A memory device including bit lines, auxiliary lines, selectors, and memory cells is provided. The word lines are intersected with the bit lines. The auxiliary lines are disposed between the word lines and the of bit lines. The selectors are inserted between the bit lines and the auxiliary lines. The memory cells are inserted between the word lines and the auxiliary lines.
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公开(公告)号：US20200098408A1
公开(公告)日：2020-03-26
申请号：US16503692
申请日：2019-07-05
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tsann Lin , Ji-Feng Ying , Chih-Chung Lai
Abstract: Some embodiments relate to a memory device. The memory device includes a magnetoresistive random-access memory (MRAM) cell comprising a magnetic tunnel junction (MTJ). The MTJ device comprises a stack of layers, comprising a bottom electrode disposed over a substrate. A seed layer disposed over the bottom electrode. A buffer layer is disposed between the bottom electrode and the seed layer. The buffer layer prevents diffusion of a diffusive species from the bottom electrode to the seed layer.
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公开(公告)号：US11698423B2
公开(公告)日：2023-07-11
申请号：US16991424
申请日：2020-08-12
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Jui-Fen Chien , Wei-Gang Chiu , Tsann Lin
CPC classification number: G01R33/093 , G11C11/161 , G11C11/1655 , G11C11/1657 , H10B61/22 , H10N50/01 , H10N50/10 , H10N50/80 , H10N50/85
Abstract: In an embodiment, a device includes: a magnetoresistive random access memory cell including: a bottom electrode; a reference layer over the bottom electrode; a tunnel barrier layer over the reference layer, the tunnel barrier layer including a first composition of magnesium and oxygen; a free layer over the tunnel barrier layer, the free layer having a lesser coercivity than the reference layer; a cap layer over the free layer, the cap layer including a second composition of magnesium and oxygen, the second composition of magnesium and oxygen having a greater atomic concentration of oxygen and a lesser atomic concentration of magnesium than the first composition of magnesium and oxygen; and a top electrode over the cap layer.
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Patent Agency Ranking
公开(公告)号：US11527275B2
公开(公告)日：2022-12-13
申请号：US16503692
申请日：2019-07-05
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tsann Lin , Ji-Feng Ying , Chih-Chung Lai
Abstract: Some embodiments relate to a memory device. The memory device includes a magnetoresistive random-access memory (MRAM) cell comprising a magnetic tunnel junction (MTJ). The MTJ device comprises a stack of layers, comprising a bottom electrode disposed over a substrate. A seed layer disposed over the bottom electrode. A buffer layer is disposed between the bottom electrode and the seed layer. The buffer layer prevents diffusion of a diffusive species from the bottom electrode to the seed layer.
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公开(公告)号：US11289538B2
公开(公告)日：2022-03-29
申请号：US16739016
申请日：2020-01-09
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Ji-Feng Ying , Jhong-Sheng Wang , Tsann Lin
IPC: H01L27/22 , H01L23/528 , H01L43/12 , H01L43/02 , H01F10/32 , H01L23/522 , H01F41/32 , G11C11/16
Abstract: A memory device including bit lines, auxiliary lines, selectors, and memory cells is provided. The word lines are intersected with the bit lines. The auxiliary lines are disposed between the word lines and the of bit lines. The selectors are inserted between the bit lines and the auxiliary lines. The memory cells are inserted between the word lines and the auxiliary lines.
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公开(公告)号：US11165012B2
公开(公告)日：2021-11-02
申请号：US16592007
申请日：2019-10-03
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Ji-Feng Ying , Jhong-Sheng Wang , Tsann Lin
Abstract: A magnetic memory including a first spin-orbital-transfer-spin-torque-transfer (SOT-SIT) hybrid magnetic device disposed over a substrate, a second SOT-STT hybrid magnetic device disposed over the substrate, and a SOT conductive layer connected to the first and second SOT-STT hybrid magnetic devices. Each of the first and second SOT-STT hybrid magnetic devices includes a first magnetic layer, as a magnetic free layer, a spacer layer disposed under the first magnetic layer, and a second magnetic layer, as a magnetic reference layer, disposed under the spacer layer. The SOT conductive layer is disposed over the first magnetic layer of each of the first and second SOT-STT hybrid magnetic devices.
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9.发明授权公开(公告)号：US11088201B2
公开(公告)日：2021-08-10
申请号：US16372792
申请日：2019-04-02
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tsann Lin , Chien-Min Lee , Ji-Feng Ying
Abstract: Some embodiments relate to a memory device. The memory device includes a magnetoresistive random-access memory (MRAM) cell comprising a magnetic tunnel junction (MTJ). The MTJ device comprises a stack of layers, comprising a bottom electrode disposed over a substrate. A seed layer disposed over the bottom electrode. A buffer layer is disposed between the bottom electrode and the seed layer. The buffer layer prevents diffusion of a diffusive species from the bottom electrode to the seed layer.
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10.发明申请公开(公告)号：US20200006425A1
公开(公告)日：2020-01-02
申请号：US16372792
申请日：2019-04-02
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tsann Lin , Chien-Min Lee , Ji-Feng Ying
Abstract: Some embodiments relate to a memory device. The memory device includes a magnetoresistive random-access memory (MRAM) cell comprising a magnetic tunnel junction (MTJ). The MTJ device comprises a stack of layers, comprising a bottom electrode disposed over a substrate. A seed layer disposed over the bottom electrode. A buffer layer is disposed between the bottom electrode and the seed layer. The buffer layer prevents diffusion of a diffusive species from the bottom electrode to the seed layer.
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