公开(公告)号：US20240079270A1

公开(公告)日：2024-03-07

申请号：US18507759

申请日：2023-11-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Huei-Wen Hsieh ,  Kai-Shiang Kuo ,  Cheng-Hui Weng ,  Chun-Sheng Chen ,  Wen-Hsuan Chen

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L21/76882 ,  H01L21/7684 ,  H01L21/76846 ,  H01L21/76862 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53238 ,  H01L27/0886

Abstract: A method of forming a semiconductor device includes forming an opening in a dielectric layer, and forming a barrier layer in the opening. A combined liner layer is formed over the barrier layer by first forming a first liner layer over the barrier layer, and forming a second liner layer over the first liner layer, such that the first liner layer and the second liner layer intermix. A conductive material layer is formed over the combined liner layer, and a thermal process is performed to reflow the conductive material layer.

公开(公告)号：US11374127B2

公开(公告)日：2022-06-28

申请号：US16939199

申请日：2020-07-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yao-Jen Chang ,  Chih-Chien Chi ,  Chen-Yuan Kao ,  Hung-Wen Su ,  Kai-Shiang Kuo ,  Po-Cheng Shih ,  Jun-Yi Ruan

IPC: H01L21/00 ,  H01L29/78 ,  H01L29/66 ,  H01L23/522 ,  H01L23/528 ,  H01L21/768 ,  H01L23/532 ,  H01L21/8238 ,  H01L27/092

Abstract: A device, structure, and method are provided whereby an insert layer is utilized to provide additional support for weaker and softer dielectric layer. The insert layer may be applied between two weaker dielectric layers or the insert layer may be used with a single layer of dielectric material. Once formed, trenches and vias are formed within the composite layers, and the insert layer will help to provide support that will limit or eliminate undesired bending or other structural motions that could hamper subsequent process steps, such as filling the trenches and vias with conductive material.

公开(公告)号：US11328952B2

公开(公告)日：2022-05-10

申请号：US17099263

申请日：2020-11-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Cheng Chou ,  Chih-Chien Chi ,  Chung-Chi Ko ,  Yao-Jen Chang ,  Chen-Yuan Kao ,  Kai-Shiang Kuo ,  Po-Cheng Shih ,  Tze-Liang Lee ,  Jun-Yi Ruan

IPC: H01L21/768 ,  H01L21/8234 ,  H01L23/532 ,  H01L21/84 ,  H01L29/66 ,  H01L23/522 ,  H01L23/528 ,  H01L29/78 ,  H01L29/08

Abstract: A device, structure, and method are provided whereby an insert layer is utilized to provide additional support for surrounding dielectric layers. The insert layer may be applied between two dielectric layers. Once formed, trenches and vias are formed within the composite layers, and the insert layer will help to provide support that will limit or eliminate undesired bending or other structural motions that could hamper subsequent process steps, such as filling the trenches and vias with conductive material.

公开(公告)号：US20210202310A1

公开(公告)日：2021-07-01

申请号：US17066706

申请日：2020-10-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Huei-Wen Hsieh ,  Kai-Shiang Kuo ,  Cheng-Hui Weng ,  Chun-Sheng Chen ,  Wen-Hsuan Chen

IPC: H01L21/768 ,  H01L23/528 ,  H01L23/522 ,  H01L23/532

Abstract: A method of forming a semiconductor device includes forming an opening in a dielectric layer, and forming a barrier layer in the opening. A combined liner layer is formed over the barrier layer by first forming a first liner layer over the barrier layer, and forming a second liner layer over the first liner layer, such that the first liner layer and the second liner layer intermix. A conductive material layer is formed over the combined liner layer, and a thermal process is performed to reflow the conductive material layer.

公开(公告)号：US08962473B2

公开(公告)日：2015-02-24

申请号：US13833794

申请日：2013-03-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kai-Shiang Kuo ,  Ken-Yu Chang ,  Ya-Lien Lee ,  Hung-Wen Su

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L23/53238 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/768 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76867 ,  H01L21/76877 ,  H01L23/53223 ,  H01L23/53252 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a method of fabricating a semiconductor device, an opening is formed inside a dielectric layer above a semiconductor substrate. The opening has a wall. At least one diffusion barrier material is then formed over the wall of the opening by at least two alternating steps, which are selected from the group consisting of a process of physical vapor deposition (PVD) and a process of atomic layer deposition (ALD). A liner layer is formed over the at least one diffusion barrier material.

Abstract translation: 在制造半导体器件的方法中，在半导体衬底之上的电介质层的内部形成有开口。 开口有一堵墙。 然后通过至少两个交替的步骤在开口的壁上形成至少一个扩散阻挡材料，所述至少两个交替步骤选自由物理气相沉积（PVD）和原子层沉积（ALD）的过程组成的组。 衬里层形成在至少一个扩散阻挡材料上。