公开(公告)号：US20220404705A1

公开(公告)日：2022-12-22

申请号：US17713823

申请日：2022-04-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren ZI ,  Ming-Hui WENG ,  Ching-Yu CHANG

IPC: G03F7/11 ,  H01L21/027 ,  H01L21/311 ,  H01L21/033

Abstract: A method for reducing resist consumption (RRC) is provided. The method includes treating a surface of a substrate using a RRC composition and forming a photoresist layer comprising a metal-containing material on the RRC composition treated surface. The RRC composition includes a solvent and an acid or a base. The solvent has a dispersion parameter between 10 and 25. The acid has an acid dissociation constant between -20 and 6.8. The base having an acid dissociation constant between 7.2 and 45.

公开(公告)号：US20220028684A1

公开(公告)日：2022-01-27

申请号：US17156365

申请日：2021-01-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yen-Yu CHEN ,  Chib-Cheng LIU ,  Yi-Ohen KUO ,  Jr-Hung Li ,  Tze-Liang LEE ,  Ming-Hui WENG ,  Yahru CHENG

IPC: H01L21/027 ,  H01L21/311 ,  H01L21/308

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate and forming a dehydrated film over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form an exposed portion and an unexposed portion of the photoresist layer. The photoresist layer is developed to remove the unexposed portion of the photoresist layer and a first portion of the dehydrated film over the unexposed portion of the photoresist layer. In an embodiment, the method includes etching the substrate by using the exposed portion of the photoresist layer as a mask.

公开(公告)号：US20210305040A1

公开(公告)日：2021-09-30

申请号：US17150403

申请日：2021-01-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yi-Chen KUO ,  Chih-Cheng LIU ,  Ming-Hui WENG ,  Jia-Lin WEI ,  Yen-Yu CHEN ,  Jr-Hung LI ,  Yahru CHENG ,  Chi-Ming YANG ,  Tze-Liang LEE ,  Ching-Yu CHANG

IPC: H01L21/027 ,  H01L21/02

Abstract: A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

公开(公告)号：US20210341844A1

公开(公告)日：2021-11-04

申请号：US17378507

申请日：2021-07-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ming-Hui WENG ,  Chen-Yu LIU ,  Cheng-Han WU ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: G03F7/40 ,  G03F7/20 ,  G03F1/82 ,  G03F7/30 ,  G03F7/32

Abstract: A method includes illuminating radiation to a resist layer over a substrate to pattern the resist layer. The patterned resist layer is developed by using a positive tone developer. The patterned resist layer is rinsed using a basic aqueous rinse solution. A pH value of the basic aqueous rinse solution is lower than a pH value of the developer, and a rinse temperature of rinsing the patterned resist layer is in a range of about 20° C. to about 40° C.

公开(公告)号：US20210302839A1

公开(公告)日：2021-09-30

申请号：US17150389

申请日：2021-01-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chih-Cheng LIU ,  Yi-Chen KUO ,  Jia-Lin WEI ,  Ming-Hui WENG ,  Yen-Yu CHEN ,  Jr-Hung LI ,  Yahru CHENG ,  Chi-Ming YANG ,  Tze-Liang LEE ,  Ching-Yu CHANG

IPC: G03F7/16 ,  G03F7/11 ,  H01L21/027

Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Forming photoresist layer includes combining first precursor and second precursor in vapor state to form photoresist material, wherein first precursor is organometallic having formula: MaRbXc, where M at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu; R is substituted or unsubstituted alkyl, alkenyl, carboxylate group; X is halide or sulfonate group; and 1≤a≤2, b≥1, c≥1, and b+c≤5. Second precursor is at least one of an amine, a borane, a phosphine. Forming photoresist layer includes depositing photoresist material over the substrate. The photoresist layer is selectively exposed to actinic radiation to form latent pattern, and the latent pattern is developed by applying developer to selectively exposed photoresist layer to form pattern.

公开(公告)号：US20190157073A1

公开(公告)日：2019-05-23

申请号：US16124063

申请日：2018-09-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Hui WENG ,  Cheng-Han WU ,  Ching-Yu CHANG ,  Chin-Hsiang LIN ,  Siao-Shan WANG

IPC: H01L21/027 ,  H01L21/308 ,  G03F7/20

Abstract: Methods for forming a semiconductor structure including using a photoresist material are provided. The method for forming a semiconductor structure includes forming a material layer over a substrate and forming a photoresist layer over the material layer. The method for forming a semiconductor structure further includes performing an exposure process on the photoresist layer and developing the photoresist layer. In addition, the photoresist layer is made of a photoresist material comprising a photosensitive polymer, and the photosensitive polymer has a first photosensitive functional group bonding to a main chain of the photosensitive polymer and a first acid labile group bonding to the first photosensitive functional group.