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公开(公告)号：US20230113582A1
公开(公告)日：2023-04-13
申请号：US18064626
申请日：2022-12-12
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hsing-Piao HSU , Nai-Han Cheng , Ping-Chih Ou
IPC: H01J37/317 , C23C14/48 , H01J37/08
Abstract: The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.
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公开(公告)号：US11081315B2
公开(公告)日：2021-08-03
申请号：US16442088
申请日：2019-06-14
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hsing-Piao Hsu , Nai-Han Cheng , Ping-Chih Ou
IPC: H01J37/317 , C23C14/48 , H01J37/08 , F17C13/04
Abstract: The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.
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公开(公告)号：US10784079B2
公开(公告)日：2020-09-22
申请号：US16408795
申请日：2019-05-10
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Ying-Chieh Meng , Chui-Ya Peng , Nai-Han Cheng
IPC: H01J37/317 , H01J37/08 , H01J27/20 , H01L21/8238 , C23C14/48 , H01L21/265
Abstract: The present disclosure describes an ion implantation system that includes a bushing designed to reduce the accumulation of IMP by-produces on the bushing's inner surfaces. The ion implantation system can include a chamber, an ion source configured to generate an ion beam, and a bushing coupling the ion source and the chamber. The bushing can include (i) a tubular body having an inner surface, a first end, and a second end and (ii) multiple angled trenches disposed within the inner surface of the tubular body, where each of the multiple angled trenches extends towards the second end of the tubular body.
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公开(公告)号：US09239192B2
公开(公告)日：2016-01-19
申请号：US13771260
申请日：2013-02-20
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Nai-Han Cheng , Chi-Ming Yang
CPC classification number: F27D11/12 , F27B17/0025 , F27D99/0006 , H01L21/67115 , H01L21/68764 , H01L21/68771
Abstract: A method and apparatus for rapid thermal heat treatment of semiconductor and other substrates is provided. A number of heat lamps arranged in an array or other configuration produce light and heat radiation. The light and heat radiation is directed through a heat slot that forms a radiation beam of high intensity light and heat. The radiation beam is directed to a platen that includes multiple substrates. The apparatus and method include a controller that controls rotational and translational motion of the platen relative to the heat slot and also controls the power individually and collectively supplied to the heat lamps. A program is executed which maneuvers the platen such that all portions of all substrates receive the desired thermal treatment, i.e. attain a desired temperature for a desired time period.
Abstract translation: 提供了一种用于半导体和其他基板的快速热处理的方法和装置。 排列成阵列或其他结构的多个热灯产生光和热辐射。 光和热辐射被引导通过形成高强度光和热的辐射束的热槽。 辐射束被引导到包括多个基板的压板。 该装置和方法包括一个控制器，该控制器控制压板相对于热槽的旋转和平移运动，并且还分别控制功率并集中供应给加热灯。 执行一个程序，其操纵压盘，使得所有基板的所有部分都接受所需的热处理，即在期望的时间段内达到所需温度。
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公开(公告)号：US12158434B2
公开(公告)日：2024-12-03
申请号：US18387815
申请日：2023-11-07
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Nai-Han Cheng , Hsing-Piao Hsu
Abstract: In an embodiment, a system includes: a broadband light source; a wafer with a first side facing the broadband light source; a first light sensor configured to detect reflected light from the broadband light source emanating from the first side; a second light sensor configured to detect emergent light emanating from a second side of the wafer opposite the first side, wherein the emergent light originates from the broadband light source; and a detector module configured to analyze the reflected light and the emergent light to identify wafer defects.
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Patent Agency Ranking
公开(公告)号：US11961707B2
公开(公告)日：2024-04-16
申请号：US18064626
申请日：2022-12-12
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hsing-Piao Hsu , Nai-Han Cheng , Ping-Chih Ou
IPC: H01J37/317 , C23C14/48 , F17C13/04 , H01J37/08
CPC classification number: H01J37/3171 , C23C14/48 , H01J37/08 , F17C13/04
Abstract: The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.
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公开(公告)号：US11852593B2
公开(公告)日：2023-12-26
申请号：US17370653
申请日：2021-07-08
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Nai-Han Cheng , Hsing-Piao Hsu
CPC classification number: G01N21/9501 , G01N21/33 , G01N21/9505 , G01N2021/8861 , G01N2021/8887
Abstract: In an embodiment, a system includes: a broadband light source; a wafer with a first side facing the broadband light source; a first light sensor configured to detect reflected light from the broadband light source emanating from the first side; a second light sensor configured to detect emergent light emanating from a second side of the wafer opposite the first side, wherein the emergent light originates from the broadband light source; and a detector module configured to analyze the reflected light and the emergent light to identify wafer defects.
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公开(公告)号：US20210319978A1
公开(公告)日：2021-10-14
申请号：US17356100
申请日：2021-06-23
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hsing-Piao Hsu , Nai-Han Cheng , Ping-Chih Ou
IPC: H01J37/317 , C23C14/48 , H01J37/08
Abstract: The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.
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公开(公告)号：US11075097B2
公开(公告)日：2021-07-27
申请号：US16735973
申请日：2020-01-07
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Nai-Han Cheng , Chi-Ming Yang
IPC: H01L21/67 , G01B11/16 , G01B11/14 , G01B11/24 , H01L21/66 , H01L23/00 , H01L21/768 , H01L25/00 , H01L25/065
Abstract: The present disclosure, in some embodiments, relates to a substrate metrology system. The substrate metrology system includes a warpage measurement module configured to determine one or more substrate warpage parameters of a substrate. The substrate includes a plurality of conductive interconnect layers within a dielectric structure over a semiconductor substrate. A metrology module is located physically downstream of the warpage measurement module and has an optical element configured to measure one or more dimensions of the substrate. The metrology module is configured to place the optical element at a plurality of different initial positions, which are directly over a plurality of different locations on the substrate, based upon the one or more substrate warpage parameters. A substrate transport system is configured to transfer the substrate from a first position within the warpage measurement module to a non-overlapping second position within the metrology module.
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公开(公告)号：US10541164B2
公开(公告)日：2020-01-21
申请号：US16234675
申请日：2018-12-28
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Nai-Han Cheng , Chi-Ming Yang
IPC: G01B11/14 , G01B11/16 , G01B11/24 , H01L21/67 , H01L21/768 , H01L25/00 , H01L21/66 , H01L21/68 , H01L23/00 , H01L25/065
Abstract: The present disclosure, in some embodiments, relates to a substrate metrology system. The substrate metrology system includes a substrate warpage measurement module configured to determine one or more substrate warpage parameters of a substrate by taking a plurality of separate measurements at a plurality of different positions over a substrate. The substrate has a plurality of conductive interconnect layers within a dielectric structure over a semiconductor substrate and a conductive bump disposed over the dielectric structure and configured to be coupled to an additional substrate of a multi-dimensional chip. A substrate metrology module has an optical component and is configured to measure one or more dimensions of the conductive bump. A position control element is configured to move the optical component. A feed-forward path is coupled between an output of the substrate warpage measurement module and an input of the position control element.
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