公开(公告)号：US20230060899A1

公开(公告)日：2023-03-02

申请号：US17461744

申请日：2021-08-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chieh HSIEH ,  Tai-Yu CHEN ,  Cho-Ying LIN ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: G03F7/20 ,  H05G2/00 ,  G02B17/06

Abstract: A lithography system is provided capable of deterring contaminants, such as tin debris from entering into the scanner. The lithography system in accordance with various embodiments of the present disclosure includes a processor, an extreme ultraviolet light source, a scanner, and a hollow connection member. The light source includes a droplet generator for generating a droplet, a collector for reflecting extreme ultraviolet light into an intermediate focus point, and a light generator for generating pre-pulse light and main pulse light. The droplet generates the extreme ultraviolet light in response to the droplet being illuminated with the pre-pulse light and the main pulse light. The scanner includes a wafer stage. The hollow connection member includes an inlet that is in fluid communication with an exhaust pump. The hollow connection member provides a hollow space in which the intermediate focus point is disposed. The hollow connection member is disposed between the extreme ultraviolet light source and the scanner.

公开(公告)号：US20210349396A1

公开(公告)日：2021-11-11

申请号：US17193827

申请日：2021-03-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-Yu CHEN ,  Sagar Deepak KHIVSARA ,  Kuo-An LIU ,  Chieh HSIEH ,  Shang-Chieh CHIEN ,  Gwan-Sin CHANG ,  Kai Tak LAM ,  Li-Jui CHEN ,  Heng-Hsin LIU ,  Chung-Wei WU ,  Zhiqiang WU

IPC: G03F7/20

Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.

公开(公告)号：US20240369937A1

公开(公告)日：2024-11-07

申请号：US18773322

申请日：2024-07-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-Yu CHEN ,  Shang-Chieh CHIEN ,  Sheng-Kang YU ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: G03F7/00 ,  G06N20/00

Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a collector and a plurality of vibration sensors coupled to the collector. The vibration sensors generate sensor signals indicative of shockwaves from laser pulses and impacts from debris. The system utilizes the sensor signals to improve the quality of EUV light generation.

公开(公告)号：US20220269182A1

公开(公告)日：2022-08-25

申请号：US17501848

申请日：2021-10-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-Yu CHEN ,  Shang-Chieh CHIEN ,  Sheng-Kang YU ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: G03F7/20 ,  G06N20/00

Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a collector and a plurality of vibration sensors coupled to the collector. The vibration sensors generate sensor signals indicative of shockwaves from laser pulses and impacts from debris. The system utilizes the sensor signals to improve the quality of EUV light generation.