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公开(公告)号：US20210208508A1
公开(公告)日：2021-07-08
申请号：US17208791
申请日：2021-03-22
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Yu-Chih CHEN , Po-Chung CHENG , Li-Jui CHEN , Shang-Chieh CHIEN , Sheng-Kang YU , Wei-Chun YEN
Abstract: An EUV collector mirror for an extreme ultra violet (EUV) radiation source apparatus includes an EUV collector mirror body on which a reflective layer as a reflective surface is disposed, a heater attached to or embedded in the EUV collector mirror body and a drain structure to drain melted metal from the reflective surface of the EUV collector mirror body to a back side of the EUV collector mirror body.
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公开(公告)号：US20220334472A1
公开(公告)日：2022-10-20
申请号：US17232483
申请日：2021-04-16
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Cheng Hung TSAI , Sheng-Kang YU , Shang-Chieh CHIEN , Heng-Hsin LIU , Li-Jui CHEN
Abstract: A method includes: depositing a mask layer over a substrate; directing first radiation reflected from a central collector section of a sectional collector of a lithography system toward the mask layer according to a pattern; directing second radiation reflected from a peripheral collector section of the sectional collector toward the mask layer according to the pattern, wherein the peripheral collector section is vertically separated from the central collector section by a gap; forming openings in the mask layer by removing first regions of the mask layer exposed to the first radiation and second regions of the mask layer exposed to the second radiation; and removing material of a layer underlying the mask layer exposed by the openings.
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公开(公告)号：US20230284366A1
公开(公告)日：2023-09-07
申请号：US18298927
申请日：2023-04-11
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tai-Yu CHEN , Cho-Ying LIN , Sagar Deepak KHIVSARA , Hsiang CHEN , Chieh HSIEH , Sheng-Kang YU , Shang-Chieh CHIEN , Kai Tak LAM , Li-Jui CHEN , Heng-Hsin LIU , Zhiqiang WU
CPC classification number: H05G2/008 , H05G2/006 , G03F7/7055 , G03F7/7085 , G03F7/70033
Abstract: A light source is provided capable of maintaining the temperature of a collector surface at or below a predetermined temperature. The light source in accordance with various embodiments of the present disclosure includes a processor, a droplet generator for generating a droplet to create extreme ultraviolet light, a collector for reflecting the extreme ultraviolet light into an intermediate focus point, a light generator for generating pre-pulse light and main pulse light, and a thermal image capture device for capturing a thermal image from a reflective surface of the collector.
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公开(公告)号：US20200331038A1
公开(公告)日：2020-10-22
申请号：US16388387
申请日：2019-04-18
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Shang-Ying WU , Ming-Hsun TSAI , Sheng-Kang YU , Yung-Teng YU , Chi YANG , Shang-Chieh CHIEN , Chia-Chen CHEN , Li-Jui CHEN , Po-Chung CHENG
Abstract: Debris is removed from a collector of an extreme ultraviolet light source vessel by applying a suction force through a vacuum opening of a cable. The method for removing debris also includes weakening debris attachment by using a sticky surface or by spreading a solution through a nozzle, wherein the sticky surface and the nozzle are arranged on the cable proximal to the vacuum opening. A borescope system and interchangeable rigid portions of the cable assists in targeting a target area of the collector where the debris is.
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公开(公告)号：US20230400763A1
公开(公告)日：2023-12-14
申请号：US18446400
申请日：2023-08-08
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Cheng Hung TSAI , Sheng-Kang YU , Shang-Chieh CHIEN , Heng-Hsin LIU , Li-Jui CHEN
CPC classification number: G03F7/0035 , G03F7/22 , G03F7/36 , G03F7/2004 , G03F7/2026
Abstract: A method includes: depositing a mask layer over a substrate; directing first radiation reflected from a central collector section of a sectional collector of a lithography system toward the mask layer according to a pattern; directing second radiation reflected from a peripheral collector section of the sectional collector toward the mask layer according to the pattern, wherein the peripheral collector section is vertically separated from the central collector section by a gap; forming openings in the mask layer by removing first regions of the mask layer exposed to the first radiation and second regions of the mask layer exposed to the second radiation; and removing material of a layer underlying the mask layer exposed by the openings.
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Patent Agency Ranking
公开(公告)号：US20230065403A1
公开(公告)日：2023-03-02
申请号：US17462563
申请日：2021-08-31
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tai-Yu CHEN , Cho-Ying LIN , Sagar Deepak KHIVSARA , Hsiang CHEN , Chieh HSIEH , Sheng-Kang YU , Shang-Chieh CHIEN , Kai Tak LAM , Li-Jui CHEN , Heng-Hsin LIU , Zhiqiang WU
Abstract: A light source is provided capable of maintaining the temperature of a collector surface at or below a predetermined temperature. The light source in accordance with various embodiments of the present disclosure includes a processor, a droplet generator for generating a droplet to create extreme ultraviolet light, a collector for reflecting the extreme ultraviolet light into an intermediate focus point, a light generator for generating pre-pulse light and main pulse light, and a thermal image capture device for capturing a thermal image from a reflective surface of the collector.
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公开(公告)号：US20200004167A1
公开(公告)日：2020-01-02
申请号：US16415642
申请日：2019-05-17
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Yu-Chih CHEN , Sheng-Kang YU , Chi YANG , Shang-Chieh CHIEN , Li-Jui CHEN , Po-Chung CHENG
Abstract: An extreme ultraviolet (EUV) radiation source apparatus includes a collector and a target droplet generator for generating a tin (Sn) droplet. A debris collection device is disposed over a reflection surface of the collector, and at least one drip hole is located between the debris collection device and the collector. A tin bucket for collecting debris from the debris collection device is located below the at least one drip hole, and a tube or guide rod extends from the drip hole to the tin bucket.
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公开(公告)号：US20180364596A1
公开(公告)日：2018-12-20
申请号：US15622483
申请日：2017-06-14
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tung-Jung CHANG , Yu-Fu LIN , Sheng-Kang YU
Abstract: A method for creating a vacuum in a load lock chamber is provided. The method includes building an air-tight environment in the load lock chamber. The method further includes reducing the pressure in a gas tank to a predetermined vacuum pressure. The method also includes enabling an exchange of gas between the load lock chamber and the gas tank when the pressure in the gas tank is at the predetermined vacuum pressure so as to reduce the pressure in the load lock chamber to an adjusted vacuum pressure.
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9.发明申请公开(公告)号：US20240369937A1
公开(公告)日：2024-11-07
申请号：US18773322
申请日：2024-07-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tai-Yu CHEN , Shang-Chieh CHIEN , Sheng-Kang YU , Li-Jui CHEN , Heng-Hsin LIU
Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a collector and a plurality of vibration sensors coupled to the collector. The vibration sensors generate sensor signals indicative of shockwaves from laser pulses and impacts from debris. The system utilizes the sensor signals to improve the quality of EUV light generation.
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公开(公告)号：US20240004304A1
公开(公告)日：2024-01-04
申请号：US17855357
申请日：2022-06-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Cheng Hung TSAI , Sheng-Kang YU , Shang-Chieh CHIEN , Heng-Hsin LIU , Li-Jui CHEN
IPC: G03F7/20
CPC classification number: G03F7/70175 , G03F7/70033
Abstract: Methods and apparatuses for a lithography exposure process are described. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The methods utilized and the apparatuses include two or more collectors for collecting the generated EUV light and reflecting the collected EUV light to a focal point of one of the collectors. In some embodiments, one of the two collectors includes a ring-shaped collector.
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