公开(公告)号：US20190386114A1

公开(公告)日：2019-12-19

申请号：US16007885

申请日：2018-06-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Kuo-An LIU ,  Chan-Lon YANG ,  Bharath Kumar PULICHERLA ,  Zhi-Qiang WU ,  Chung-Cheng WU ,  Chih-Han LIN ,  Gwan-Sin CHANG

IPC: H01L29/66 ,  H01L27/088 ,  H01L29/423 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/311

Abstract: A semiconductor structure is disclosed that includes the fin structure and the plurality of gates. The plurality of gates disposed with respect to the fin structure and including the first gate, the second gate, and the third gate. The spacing between the first gate and the second gate is smaller than the spacing between the second gate and the third gate. The second gate is disposed between the first gate and the third gate. The foot portion of the first gate, facing the second gate, and the first foot portion of the second gate, facing the first gate, have no lateral extension. The second foot portion of the second gate, facing the third gate, and the foot portion of the third gate, facing the second gate, have no lateral extension and/or cut.

公开(公告)号：US20250089332A1

公开(公告)日：2025-03-13

申请号：US18962707

申请日：2024-11-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Zhi-Qiang WU ,  Kuo-An LIU ,  Chan-Lon YANG ,  Bharath Kumar PULICHERLA ,  Li-Te LIN ,  Chung-Cheng WU ,  Gwan-Sin CHANG ,  Pinyen LIN

IPC: H01L29/66 ,  H01L21/311 ,  H01L21/3213 ,  H01L29/40 ,  H01L29/49 ,  H01L29/78

Abstract: A semiconductor device includes a substrate having a semiconductor fin. A gate structure is over the semiconductor fin, in which the gate structure has a tapered profile and comprises a gate dielectric. A work function metal layer is over the gate dielectric, and a filling metal is over the work function metal layer. A gate spacer is along a sidewall of the gate structure, in which the work function metal layer is in contact with the gate dielectric and a top portion of the gate spacer. An epitaxy structure is over the semiconductor fin.

公开(公告)号：US20210349396A1

公开(公告)日：2021-11-11

申请号：US17193827

申请日：2021-03-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-Yu CHEN ,  Sagar Deepak KHIVSARA ,  Kuo-An LIU ,  Chieh HSIEH ,  Shang-Chieh CHIEN ,  Gwan-Sin CHANG ,  Kai Tak LAM ,  Li-Jui CHEN ,  Heng-Hsin LIU ,  Chung-Wei WU ,  Zhiqiang WU

IPC: G03F7/20

Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.

公开(公告)号：US20230367225A1

公开(公告)日：2023-11-16

申请号：US18361254

申请日：2023-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-Yu CHEN ,  Sagar Deepak KHIVSARA ,  Kuo-An LIU ,  Chieh HSIEH ,  Shang-Chieh CHIEN ,  Gwan-Sin CHANG ,  Kai Tak LAM ,  Li-Jui CHEN ,  Heng-Hsin LIU ,  Chung-Wei WU ,  Zhiqiang WU

IPC: G03F7/00

CPC classification number: G03F7/70033 ,  G03F7/70166 ,  G03F7/705 ,  G03F7/70916 ,  G03F7/70933

Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.

公开(公告)号：US20210305409A1

公开(公告)日：2021-09-30

申请号：US17333676

申请日：2021-05-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Zhi-Qiang WU ,  Kuo-An LIU ,  Chan-Lon YANG ,  Bharath Kumar PULICHERLA ,  Li-Te LIN ,  Chung-Cheng WU ,  Gwan-Sin CHANG ,  Pinyen LIN

IPC: H01L29/66 ,  H01L21/311 ,  H01L21/3213 ,  H01L29/78 ,  H01L29/49 ,  H01L29/40

Abstract: A semiconductor device includes a substrate having a semiconductor fin. A gate structure is over the semiconductor fin, in which the gate structure has a tapered profile and comprises a gate dielectric. A work function metal layer is over the gate dielectric, and a filling metal is over the work function metal layer. A gate spacer is along a sidewall of the gate structure, in which the work function metal layer is in contact with the gate dielectric and a top portion of the gate spacer. An epitaxy structure is over the semiconductor fin.

公开(公告)号：US20220350257A1

公开(公告)日：2022-11-03

申请号：US17867318

申请日：2022-07-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-Yu CHEN ,  Sagar Deepak KHIVSARA ,  Kuo-An LIU ,  Chieh HSIEH ,  Shang-Chieh CHIEN ,  Gwan-Sin CHANG ,  Kai Tak LAM ,  Li-Jui CHEN ,  Heng-Hsin LIU ,  Chung-Wei WU ,  Zhiqiang WU

IPC: G03F7/20

Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.

公开(公告)号：US20200098890A1

公开(公告)日：2020-03-26

申请号：US16559369

申请日：2019-09-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Zhi-Qiang WU ,  Kuo-An LIU ,  Chan-Lon YANG ,  Bharath Kumar PULICHERLA ,  Li-Te LIN ,  Chung-Cheng WU ,  Gwan-Sin CHANG ,  Pinyen LIN

IPC: H01L29/66 ,  H01L21/311 ,  H01L29/40 ,  H01L29/78 ,  H01L29/49 ,  H01L21/3213

Abstract: A method includes forming a dummy gate over a substrate. A pair of gate spacers are formed on opposite sidewalls of the dummy gate. The dummy gate is removed to form a trench between the gate spacers. A first ion beam is directed to an upper portion of the trench, while leaving a lower portion of the trench substantially free from incidence of the first ion beam. The substrate is moved relative to the first ion beam during directing the first ion beam to the trench. A gate structure is formed in the trench.

公开(公告)号：US20200041783A1

公开(公告)日：2020-02-06

申请号：US16517511

申请日：2019-07-19

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Kuo-An LIU ,  Gwan-Sin CHANG ,  Bharath Kumar Pulicherla ,  Li-Jui CHEN ,  Sheng-Kang YU ,  Chung-Cheng WU ,  Zhiqiang WU

IPC: G02B27/00 ,  G21K1/06 ,  H05G2/00

Abstract: An EUV collector mirror for an extreme ultra violet (EUV) radiation source apparatus includes an EUV collector mirror body on which a reflective layer as a reflective surface is disposed, a trajectory correcting device attached to or embedded in the EUV collector mirror body and a trajectory correcting device to adjust the trajectory of metal from the reflective surface of the EUV collector mirror body to an opposite side of the EUV collector mirror body.