公开(公告)号：US11670499B2

公开(公告)日：2023-06-06

申请号：US17205847

申请日：2021-03-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Wei Chang ,  Min-Hsiu Hung ,  Chun-I Tsai ,  Ken-Yu Chang ,  Yi-Ying Liu

IPC: H01L21/02 ,  H01L21/768

CPC classification number: H01L21/02068 ,  H01L21/76877

Abstract: A method of forming a semiconductor device includes forming a first conductive feature on a bottom surface of an opening through a dielectric layer. The forming the first conductive feature leaves seeds on sidewalls of the opening. A treatment process is performed on the seeds to form treated seeds. The treated seeds are removed with a cleaning process. The cleaning process may include a rinse with deionized water. A second conductive feature is formed to fill the opening.

公开(公告)号：US11563083B2

公开(公告)日：2023-01-24

申请号：US17162587

申请日：2021-01-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Wei Chang ,  Shuen-Shin Liang ,  Sung-Li Wang ,  Hsu-Kai Chang ,  Chia-Hung Chu ,  Chien-Shun Liao ,  Yi-Ying Liu

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/417 ,  H01L29/10

Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and methods of fabricating the same are disclosed. The semiconductor device includes first and second S/D regions, a nanostructured channel region disposed between the first and second S/D regions, a gate structure surrounding the nanostructured channel region, first and second contact structures disposed on first surfaces of the first and second S/D regions, a third contact structure disposed on a second surface of the first S/D region, and an etch stop layer disposed on a second surface of the second S/D region. The third contact structure includes a metal silicide layer, a silicide nitride layer disposed on the metal silicide layer, and a conductive layer disposed on the silicide nitride layer.

公开(公告)号：US20230016515A1

公开(公告)日：2023-01-19

申请号：US17875675

申请日：2022-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Wei Chang ,  Chien-Shun Liao ,  Sung-Li Wang ,  Shuen-Shin Liang ,  Shu-Lan Chang ,  Yi-Ying Liu ,  Chia-Hung Chu ,  Hsu-Kai Chang

IPC: H01L23/532 ,  H01L23/528 ,  H01L21/768

Abstract: The present disclosure describes a method for the fabrication of ruthenium conductive structures over cobalt conductive structures. In some embodiments, the method includes forming a first opening in a dielectric layer to expose a first cobalt contact and filling the first opening with ruthenium metal to form a ruthenium contact on the first cobalt contact. The method also includes forming a second opening in the dielectric layer to expose a second cobalt contact and a gate structure and filling the second opening with tungsten to form a tungsten contact on the second cobalt contact and the gate structure. Further, the method includes forming a copper conductive structure on the ruthenium contact and the tungsten contact, where the copper from the copper conductive structure is in contact with the ruthenium metal from the ruthenium contact.

公开(公告)号：US11257712B2

公开(公告)日：2022-02-22

申请号：US15931111

申请日：2020-05-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Wei Chang ,  Yu-Ming Huang ,  Ethan Tseng ,  Ken-Yu Chang ,  Yi-Ying Liu

IPC: H01L21/768 ,  H01L29/08 ,  H01L29/04 ,  H01L29/161 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L21/02 ,  H01L21/285 ,  H01L29/78

Abstract: A method includes providing a structure that includes a semiconductor substrate, an epitaxial source/drain feature over the semiconductor substrate, and one or more dielectric layers over the epitaxial source/drain feature; etching a hole into the one or more dielectric layer to expose a portion of the epitaxial source/drain feature; forming a silicide layer over the portion of the epitaxial source/drain feature; forming a conductive barrier layer over the silicide layer; and applying a plasma cleaning process to at least the conductive barrier layer, wherein the plasma cleaning process uses a gas mixture including N2 gas and H2 gas and is performed at a temperature that is at least 300° C.

公开(公告)号：US20240379797A1

公开(公告)日：2024-11-14

申请号：US18781353

申请日：2024-07-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Wei Chang ,  Shahaji B. More ,  Yi-Ying Liu ,  Shuen-Shin Liang ,  Sung-Li Wang

IPC: H01L29/423 ,  H01L21/762 ,  H01L27/088 ,  H01L29/06 ,  H01L29/66 ,  H01L29/786

Abstract: In an embodiment, a device includes: a first insulating fin; a second insulating fin; a nanostructure between the first insulating fin and the second insulating fin; and a gate structure wrapping around the nanostructure, a top surface of the gate structure disposed above a top surface of the first insulating fin, the top surface of the gate structure disposed below a top surface of the second insulating fin.

公开(公告)号：US12068252B2

公开(公告)日：2024-08-20

申请号：US17875675

申请日：2022-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Wei Chang ,  Chien-Shun Liao ,  Sung-Li Wang ,  Shuen-Shin Liang ,  Shu-Lan Chang ,  Yi-Ying Liu ,  Chia-Hung Chu ,  Hsu-Kai Chang

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L23/53266 ,  H01L21/76816 ,  H01L21/7684 ,  H01L21/76883 ,  H01L23/5283 ,  H01L23/53238

Abstract: The present disclosure describes a method for the fabrication of ruthenium conductive structures over cobalt conductive structures. In some embodiments, the method includes forming a first opening in a dielectric layer to expose a first cobalt contact and filling the first opening with ruthenium metal to form a ruthenium contact on the first cobalt contact. The method also includes forming a second opening in the dielectric layer to expose a second cobalt contact and a gate structure and filling the second opening with tungsten to form a tungsten contact on the second cobalt contact and the gate structure. Further, the method includes forming a copper conductive structure on the ruthenium contact and the tungsten contact, where the copper from the copper conductive structure is in contact with the ruthenium metal from the ruthenium contact.

公开(公告)号：US20240213016A1

公开(公告)日：2024-06-27

申请号：US18598322

申请日：2024-03-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Wei Chang ,  Min-Hsiu Hung ,  Chun-I Tsai ,  Ken-Yu Chang ,  Yi-Ying Liu

IPC: H01L21/02 ,  H01L21/768

CPC classification number: H01L21/02068 ,  H01L21/76871 ,  H01L21/76877

Abstract: A method of forming a semiconductor device includes forming a first conductive feature on a bottom surface of an opening through a dielectric layer. The forming the first conductive feature leaves seeds on sidewalls of the opening. A treatment process is performed on the seeds to form treated seeds. The treated seeds are removed with a cleaning process. The cleaning process may include a rinse with deionized water. A second conductive feature is formed to fill the opening.

公开(公告)号：US20230386913A1

公开(公告)日：2023-11-30

申请号：US18361770

申请日：2023-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Wei Chang ,  Yu-Ming Huang ,  Ethan Tseng ,  Ken-Yu Chang ,  Yi-Ying Liu

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/285 ,  H01L29/04 ,  H01L29/08 ,  H01L29/161 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/76856 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76895 ,  H01L29/045 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/41791 ,  H01L29/45 ,  H01L29/66795 ,  H01L29/7851

Abstract: A semiconductor device includes a substrate, two semiconductor fins protruding from the substrate, an epitaxial feature over the two semiconductor fins and connected to the two semiconductor fins, a silicide layer over the epitaxial feature, a barrier layer over the silicide layer, and a metal layer over the barrier layer. The barrier layer includes a metal nitride. Along a boundary between the barrier layer and the metal layer, an atomic ratio of oxygen to metal nitride is about 0.15 to about 1.0.

公开(公告)号：US20230268173A1

公开(公告)日：2023-08-24

申请号：US18309298

申请日：2023-04-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Wei Chang ,  Min-Hsiu Hung ,  Chun-I Tsai ,  Ken-Yu Chang ,  Yi-Ying Liu

IPC: H01L21/02 ,  H01L21/768

CPC classification number: H01L21/02068 ,  H01L21/76877

Abstract: A method of forming a semiconductor device includes forming a first conductive feature on a bottom surface of an opening through a dielectric layer. The forming the first conductive feature leaves seeds on sidewalls of the opening. A treatment process is performed on the seeds to form treated seeds. The treated seeds are removed with a cleaning process. The cleaning process may include a rinse with deionized water. A second conductive feature is formed to fill the opening.

公开(公告)号：US20230231025A1

公开(公告)日：2023-07-20

申请号：US17686055

申请日：2022-03-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Wei Chang ,  Shahaji B. More ,  Yi-Ying Liu ,  Shuen-Shin Liang ,  Sung-Li Wang

IPC: H01L29/423 ,  H01L29/06 ,  H01L29/786 ,  H01L27/088 ,  H01L29/66 ,  H01L21/762

CPC classification number: H01L29/42392 ,  H01L21/762 ,  H01L27/088 ,  H01L29/0673 ,  H01L29/66477 ,  H01L29/78696

Abstract: In an embodiment, a device includes: a first insulating fin; a second insulating fin; a nanostructure between the first insulating fin and the second insulating fin; and a gate structure wrapping around the nanostructure, a top surface of the gate structure disposed above a top surface of the first insulating fin, the top surface of the gate structure disposed below a top surface of the second insulating fin.