公开(公告)号：US20080143450A1

公开(公告)日：2008-06-19

申请号：US11957592

申请日：2007-12-17

申请人： Akihito MATSUMOTO ,  Takamitsu HIGUCHI ,  Akio KONISHI

发明人： Akihito MATSUMOTO ,  Takamitsu HIGUCHI ,  Akio KONISHI

IPC分类号： H03B5/36 ,  H01L41/08 ,  H01L41/047 ,  H01L41/107 ,  H01L41/22

CPC分类号： H03B5/36 ,  H03H9/02259 ,  H03H9/2457 ,  Y10T29/42

摘要： A piezoelectric oscillator includes: a base substrate; a frame-like supporting section formed from a portion of the base substrate; and a plurality of oscillator sections, wherein each of the oscillator sections includes an oscillation section that is formed from a portion of the base substrate, and has one end affixed to an inner side of the support section and another free end, and a driving section that generates flexing vibration at the oscillation section, and wherein the oscillation sections are different in length, and each of the driving sections has a first electrode formed above the base substrate, a piezoelectric layer formed above the first electrode, and a second electrode formed above the piezoelectric layer.

摘要翻译： 压电振荡器包括：基底; 由所述基底基板的一部分形成的框状支撑部; 以及多个振荡器部，其中每个振荡器部分包括由基底部分的一部分形成的振荡部分，并且其一端固定在支撑部分的内侧和另一个自由端，驱动部分 在振荡部产生弯曲振动，其中振动部分的长度不同，并且每个驱动部分具有形成在基底基板上的第一电极，形成在第一电极上方的压电层和形成在第一电极上的第二电极 压电层。

公开(公告)号：US20070169324A1

公开(公告)日：2007-07-26

申请号：US11624092

申请日：2007-01-17

申请人： Aritsugu YAJIMA ,  Takamitsu HIGUCHI ,  Yoshikazu KASUYA

发明人： Aritsugu YAJIMA ,  Takamitsu HIGUCHI ,  Yoshikazu KASUYA

IPC分类号： H01L41/00 ,  H04R17/00

CPC分类号： H03H3/08 ,  H03H9/02574 ,  H03H9/0585 ,  H03H9/1071 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/49156

摘要： A method for manufacturing a surface acoustic wave element having an interdigital transducer (IDT) electrode formed on a semiconductor substrate includes a) forming an insulation layer on a surface of an active side of the semiconductor substrate, b) forming a base layer on a whole surface of the insulation layer, c) planarizing a surface of the base layer, d) forming a piezoelectric member on a planarized surface of the base layer, e) forming the IDT electrode on a surface of the piezoelectric member, and f) forming a bank being higher than a height from the surface of the base layer to the surface of the IDT electrode on a peripheral of the surface of the base layer so as to surround the piezoelectric member.

摘要翻译： 一种制造具有形成在半导体基板上的叉指式换能器（IDT）电极的声表面波元件的方法包括：a）在半导体基板的有源侧的表面上形成绝缘层，b）整体形成基底层 所述绝缘层的表面，c）平坦化所述基层的表面，d）在所述基底层的平坦化表面上形成压电元件，e）在所述压电元件的表面上形成所述IDT电极，以及f） 在基底层的表面的周边上高于从基底表面到IDT电极的表面的高度，以包围该压电元件。