公开(公告)号：US20120008142A1

公开(公告)日：2012-01-12

申请号：US13239830

申请日：2011-09-22

申请人： Seiji Kamba ,  Takashi Kondo ,  Koji Tanaka ,  Kazuhiro Takigawa ,  Yuichi Ogawa

发明人： Seiji Kamba ,  Takashi Kondo ,  Koji Tanaka ,  Kazuhiro Takigawa ,  Yuichi Ogawa

IPC分类号： G01J3/28

CPC分类号： G01N21/4788 ,  G01N33/54373

摘要： A method of attaching an object to be measured to a structure causing a diffraction phenomenon; irradiating the structure to which the object to be measured is attached and which causes the diffraction phenomenon with an electromagnetic wave; detecting the electromagnetic wave scattered by the structure causing the diffraction phenomenon; and measuring a characteristic of the object to be measured from the frequency characteristic of the detected electromagnetic wave. The object to be measured is attached directly to the surface of the structure causing the diffraction phenomenon. Thus, the method for measuring the characteristic of an object to be measured exhibits an improved measurement sensitivity and high reproducibility. A structure causing a diffraction phenomenon and used for the method, and a measuring device are provided.

摘要翻译： 将测量对象附着到引起衍射现象的结构的方法; 照射被测定对象物的结构，并用电磁波引起衍射现象; 检测由结构散射的电磁波引起的衍射现象; 并根据检测到的电磁波的频率特性来测量待测物体的特性。 要测量的物体直接附着在结构的表面，引起衍射现象。 因此，用于测量待测物体的特性的方法具有改进的测量灵敏度和高再现性。 提供引起衍射现象并用于该方法的结构和测量装置。

公开(公告)号：US07973520B2

公开(公告)日：2011-07-05

申请号：US12169879

申请日：2008-07-09

申请人： Takashi Kondo

发明人： Takashi Kondo

IPC分类号： G05F1/12

CPC分类号： H01L41/044 ,  H02M3/3376

摘要： A piezoelectric transformer type high-voltage power source apparatus to control an output voltage from a piezoelectric transformer to a load, and an image forming apparatus including the same, the piezoelectric transformer type high-voltage power source apparatus including: an output voltage detection unit to compare the output voltage with an output control voltage, and to output a digital value according to the comparison; and a driving control unit to control a driving frequency and a duty rate of the piezoelectric transformer according to the digital value. Accordingly, the piezoelectric transformer type high-voltage power source apparatus can stably perform frequency and duty rate control without experiencing an abnormal oscillation or uncontrollable state due to a manufacturing irregularity of particular components and/or a change in temperature, and a high voltage can be output within a short rise time.

摘要翻译： 一种用于控制从压电变压器到负载的输出电压的压电变压器型高压电源装置，以及包括该压电变压器的图像形成装置，所述压电变压器型高压电源装置包括：输出电压检测单元， 将输出电压与输出控制电压进行比较，并根据比较输出数字值; 以及驱动控制单元，用于根据数字值来控制压电变压器的驱动频率和占空比。 因此，压电变压器型高压电源装置可以稳定地执行频率和占空比的控制，而不会由于特定部件的制造不规则和/或温度变化而经历异常振荡或不可控制状态，并且高电压可以 输出在短的上升时间内。

公开(公告)号：US07881354B2

公开(公告)日：2011-02-01

申请号：US11880494

申请日：2007-07-23

申请人： Masahiro Yoshikawa ,  Masateru Yamamoto ,  Takashi Kondo

发明人： Masahiro Yoshikawa ,  Masateru Yamamoto ,  Takashi Kondo

IPC分类号： H01S5/00

CPC分类号： H01S5/18333 ,  B82Y20/00 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/3432 ,  H01S2301/18

摘要： A VCSEL includes a first conductivity-type first semiconductor mirror layer on a substrate, an active region thereon, a second conductivity-type second semiconductor mirror layer thereon, and a current confining layer in proximity to the active region. A mesa structure is formed such that at least a side surface of the current confining layer is exposed. The current confining layer includes a first semiconductor layer having an Al-composition and a second semiconductor layer having an Al-composition and being formed nearer to the active region than the first semiconductor layer does. Al concentration of the first semiconductor layer is higher than that of the second semiconductor layer. When oscillation wavelength of laser light is λ, optical thickness being sum of the thickness of the first and second semiconductor layers is λ/4. The first and second semiconductor layers are selectively oxidized from the side surface of the mesa structure.

摘要翻译： VCSEL包括衬底上的第一导电类型的第一半导体镜层，其上的有源区，其上的第二导电类型的第二半导体镜层，以及靠近有源区的电流限制层。 形成台面结构，使得电流限制层的至少一个侧面露出。 电流限制层包括具有Al组成的第一半导体层和具有Al组分并且形成为比第一半导体层更靠近有源区的第二半导体层。 第一半导体层的Al浓度高于第二半导体层的浓度。 当激光的振荡波长为λ时，光学厚度为第一和第二半导体层的厚度之和为λ/ 4。 从台面结构的侧面选择性地氧化第一和第二半导体层。

公开(公告)号：USD621404S1

公开(公告)日：2010-08-10

申请号：US29347293

申请日：2009-11-24

申请人： Minoru Sugitani ,  Takashi Kondo

设计人： Minoru Sugitani ,  Takashi Kondo

公开(公告)号：US07709255B2

公开(公告)日：2010-05-04

申请号：US10559132

申请日：2004-06-02

申请人： Takashi Kondo ,  Masahisa Yamada

发明人： Takashi Kondo ,  Masahisa Yamada

IPC分类号： C12N5/02 ,  C12N5/08 ,  C12N13/00

CPC分类号： C12N5/0618 ,  A61K35/12 ,  C12N2506/02

摘要： It is an object of the present invention to apply a novel method of preparing neural cells from ES cells. The method of the present invention is characterized by the electric pulse treatment of differentiating ES cells. Nerve cells obtained by the method of the present invention have the flexibility to differentiate into a variety of types of neurons in vivo preferably without the need for application of growth factors.

摘要翻译： 本发明的目的是应用从ES细胞制备神经细胞的新方法。 本发明的方法的特征在于分化ES细胞的电脉冲处理。 通过本发明的方法获得的神经细胞具有在体内优先分化成多种类型的神经元的灵活性，而不需要施用生长因子。

公开(公告)号：US07568847B2

公开(公告)日：2009-08-04

申请号：US11812711

申请日：2007-06-21

申请人： Takashi Kondo

发明人： Takashi Kondo

IPC分类号： G03B17/00

CPC分类号： G03B17/02 ,  G03B17/561 ,  G03B17/563

摘要： A nose pad for camera includes a base plate, at least one projecting portion mounted to the base plate, and a sheet portion mounted to an edge of the base plate at an edge of the sheet portion and extending obliquely upwardly over the base plate and the sheet portion. The projecting portion has an arc shape so that the nose pad can fit a contour of a nose. The sheet portion is designed to have a reasonable space in between the sheet portion and the projecting portion, so that the nose of the user can softly touch the camera when the nose pad is used.

摘要翻译： 用于照相机的鼻垫包括基板，安装到基板的至少一个突出部分和在片部分的边缘处安装到基板的边缘并在基板上倾斜向上延伸的片部分， 片部分。 突出部分具有弧形，使得鼻垫能够适应鼻部轮廓。 片部分被设计成在片部分和突出部分之间具有合理的空间，使得当使用鼻垫时，使用者的鼻子可以轻柔地触摸照相机。

公开(公告)号：USD585070S1

公开(公告)日：2009-01-20

申请号：US29300044

申请日：2008-02-13

申请人： Minoru Sugitani ,  Takashi Kondo

设计人： Minoru Sugitani ,  Takashi Kondo

公开(公告)号：USD585064S1

公开(公告)日：2009-01-20

申请号：US29300043

申请日：2008-02-13

申请人： Minoru Sugitani ,  Takashi Kondo

设计人： Minoru Sugitani ,  Takashi Kondo

公开(公告)号：USD584735S1

公开(公告)日：2009-01-13

申请号：US29300042

申请日：2008-02-13

申请人： Minoru Sugitani ,  Takashi Kondo

设计人： Minoru Sugitani ,  Takashi Kondo

公开(公告)号：US20080279245A1

公开(公告)日：2008-11-13

申请号：US12110448

申请日：2008-04-28

申请人： Masateru Yamamoto ,  Masahiro Yoshikawa ,  Takashi Kondo

发明人： Masateru Yamamoto ,  Masahiro Yoshikawa ,  Takashi Kondo

IPC分类号： H01S5/183

CPC分类号： H01S5/18308 ,  B41J2/45 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/06804 ,  H01S5/0683 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/18336

摘要： A VCSEL includes a first distributed Bragg reflector (DBR) of a first conductivity type formed on a substrate and including at least one semiconductor layer to be oxidized, an active region having a column shaped structure and formed on the first DBR, and a second DBR of a second conductivity type. At least one hole starting from a surface of the first DBR and reaching the at least one semiconductor layer to be oxidized is formed in the first DBR outside of a column shaped structure of the second DBR. An oxidized region is formed in the semiconductor layer to be oxidized by selectively oxidizing from a side surface of the hole. In the first DBR, a first current path is formed by a conductive region surrounded by the oxidized region, and a second current path is formed by a conductive region not surrounded by the oxidized region.

摘要翻译： VCSEL包括第一导电类型的第一分布布拉格反射器（DBR），其形成在衬底上并且包括至少一个要被氧化的半导体层，形成在第一DBR上的具有柱状结构的有源区和第二DBR 的第二导电类型。 从第一DBR的表面开始并到达要被氧化的至少一个半导体层的至少一个孔形成在第二DBR的列形结构外侧的第一DBR中。 通过从孔的侧面选择性氧化，在半导体层中形成被氧化的氧化区域。 在第一DBR中，第一电流路径由被氧化区域包围的导电区域形成，并且第二电流路径由未被氧化区域包围的导电区域形成。