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1.发明申请VCSEL, manufacturing method thereof, optical device, light irradiation device, data processing device, light sending device, optical spatial transmission device, and optical transmission system 有权VCSEL及其制造方法，光学装置，光照射装置，数据处理装置，发光装置，光学空间传输装置和光传输系统公开(公告)号：US20080187015A1
公开(公告)日：2008-08-07
申请号：US11880494
申请日：2007-07-23
CPC分类号： H01S5/18333 , B82Y20/00 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/18311 , H01S5/18358 , H01S5/3432 , H01S2301/18
摘要： A VCSEL includes a first conductivity-type first semiconductor mirror layer on a substrate, an active region thereon, a second conductivity-type second semiconductor mirror layer thereon, and a current confining layer in proximity to the active region. A mesa structure is formed such that at least a side surface of the current confining layer is exposed. The current confining layer includes a first semiconductor layer having an Al-composition and a second semiconductor layer having an Al-composition and being formed nearer to the active region than the first semiconductor layer does. Al concentration of the first semiconductor layer is higher than that of the second semiconductor layer. When oscillation wavelength of laser light is λ, optical thickness being sum of the thickness of the first and second semiconductor layers is λ/4. The first and second semiconductor layers are selectively oxidized from the side surface of the mesa structure.
摘要翻译： VCSEL包括衬底上的第一导电类型的第一半导体镜层，其上的有源区，其上的第二导电类型的第二半导体镜层以及靠近有源区的电流限制层。 形成台面结构，使得电流限制层的至少一个侧面露出。 电流限制层包括具有Al组成的第一半导体层和具有Al组分并且形成为比第一半导体层更靠近有源区的第二半导体层。 第一半导体层的Al浓度高于第二半导体层的浓度。 当激光的振荡波长为λ时，光学厚度为第一和第二半导体层的厚度之和为λ/ 4。 从台面结构的侧面选择性地氧化第一和第二半导体层。
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2.发明授权VCSEL, optical device, light irradiation device, data processing device, light source, free space optical communication device, and optical transmission system 有权VCSEL，光学装置，光照射装置，数据处理装置，光源，自由空间光通信装置和光传输系统公开(公告)号：US07724799B2
公开(公告)日：2010-05-25
申请号：US12110448
申请日：2008-04-28
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , B41J2/45 , H01S5/02284 , H01S5/02288 , H01S5/06804 , H01S5/0683 , H01S5/18311 , H01S5/1833 , H01S5/18336
摘要： A VCSEL includes a first distributed Bragg reflector (DBR) of a first conductivity type formed on a substrate and including at least one semiconductor layer to be oxidized, an active region having a column shaped structure and formed on the first DBR, and a second DBR of a second conductivity type. At least one hole starting from a surface of the first DBR and reaching the at least one semiconductor layer to be oxidized is formed in the first DBR outside of a column shaped structure of the second DBR. An oxidized region is formed in the semiconductor layer to be oxidized by selectively oxidizing from a side surface of the hole. In the first DBR, a first current path is formed by a conductive region surrounded by the oxidized region, and a second current path is formed by a conductive region not surrounded by the oxidized region.
摘要翻译： VCSEL包括第一导电类型的第一分布布拉格反射器（DBR），其形成在衬底上并且包括至少一个要被氧化的半导体层，形成在第一DBR上的具有柱状结构的有源区和第二DBR 的第二导电类型。 从第一DBR的表面开始并到达要被氧化的至少一个半导体层的至少一个孔形成在第二DBR的列形结构外侧的第一DBR中。 通过从孔的侧面选择性氧化，在半导体层中形成被氧化的氧化区域。 在第一DBR中，第一电流路径由被氧化区域包围的导电区域形成，并且第二电流路径由未被氧化区域包围的导电区域形成。
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3.发明授权VCSEL, manufacturing method thereof, optical device, light irradiation device, data processing device, light sending device, optical spatial transmission device, and optical transmission system 有权VCSEL及其制造方法，光学装置，光照射装置，数据处理装置，发光装置，光学空间传输装置和光传输系统公开(公告)号：US07881354B2
公开(公告)日：2011-02-01
申请号：US11880494
申请日：2007-07-23
IPC分类号： H01S5/00
CPC分类号： H01S5/18333 , B82Y20/00 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/18311 , H01S5/18358 , H01S5/3432 , H01S2301/18
摘要： A VCSEL includes a first conductivity-type first semiconductor mirror layer on a substrate, an active region thereon, a second conductivity-type second semiconductor mirror layer thereon, and a current confining layer in proximity to the active region. A mesa structure is formed such that at least a side surface of the current confining layer is exposed. The current confining layer includes a first semiconductor layer having an Al-composition and a second semiconductor layer having an Al-composition and being formed nearer to the active region than the first semiconductor layer does. Al concentration of the first semiconductor layer is higher than that of the second semiconductor layer. When oscillation wavelength of laser light is λ, optical thickness being sum of the thickness of the first and second semiconductor layers is λ/4. The first and second semiconductor layers are selectively oxidized from the side surface of the mesa structure.
摘要翻译： VCSEL包括衬底上的第一导电类型的第一半导体镜层，其上的有源区，其上的第二导电类型的第二半导体镜层，以及靠近有源区的电流限制层。 形成台面结构，使得电流限制层的至少一个侧面露出。 电流限制层包括具有Al组成的第一半导体层和具有Al组分并且形成为比第一半导体层更靠近有源区的第二半导体层。 第一半导体层的Al浓度高于第二半导体层的浓度。 当激光的振荡波长为λ时，光学厚度为第一和第二半导体层的厚度之和为λ/ 4。 从台面结构的侧面选择性地氧化第一和第二半导体层。
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4.发明申请VCSEL, OPTICAL DEVICE, LIGHT IRRADIATION DEVICE, DATA PROCESSING DEVICE, LIGHT SOURCE, FREE SPACE OPTICAL COMMUNICATION DEVICE, AND OPTICAL TRANSMISSION SYSTEM 有权VCSEL，光学装置，光照射装置，数据处理装置，光源，自由空间光通信装置和光传输系统公开(公告)号：US20080279245A1
公开(公告)日：2008-11-13
申请号：US12110448
申请日：2008-04-28
IPC分类号： H01S5/183
CPC分类号： H01S5/18308 , B41J2/45 , H01S5/02284 , H01S5/02288 , H01S5/06804 , H01S5/0683 , H01S5/18311 , H01S5/1833 , H01S5/18336
摘要： A VCSEL includes a first distributed Bragg reflector (DBR) of a first conductivity type formed on a substrate and including at least one semiconductor layer to be oxidized, an active region having a column shaped structure and formed on the first DBR, and a second DBR of a second conductivity type. At least one hole starting from a surface of the first DBR and reaching the at least one semiconductor layer to be oxidized is formed in the first DBR outside of a column shaped structure of the second DBR. An oxidized region is formed in the semiconductor layer to be oxidized by selectively oxidizing from a side surface of the hole. In the first DBR, a first current path is formed by a conductive region surrounded by the oxidized region, and a second current path is formed by a conductive region not surrounded by the oxidized region.
摘要翻译： VCSEL包括第一导电类型的第一分布布拉格反射器（DBR），其形成在衬底上并且包括至少一个要被氧化的半导体层，形成在第一DBR上的具有柱状结构的有源区和第二DBR 的第二导电类型。 从第一DBR的表面开始并到达要被氧化的至少一个半导体层的至少一个孔形成在第二DBR的列形结构外侧的第一DBR中。 通过从孔的侧面选择性氧化，在半导体层中形成被氧化的氧化区域。 在第一DBR中，第一电流路径由被氧化区域包围的导电区域形成，并且第二电流路径由未被氧化区域包围的导电区域形成。
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5.发明申请VCSEL, manufacturing method thereof, module, light sending device, optical spatial transmission device, light sending system, and optical spatial transmission system 有权VCSEL及其制造方法，模块，发光装置，光学空间传输装置，发光系统和光学空间传输系统公开(公告)号：US20080056323A1
公开(公告)日：2008-03-06
申请号：US11803468
申请日：2007-05-15
IPC分类号： H01S5/183
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/18375 , H01S5/18377 , H01S5/18383 , H01S5/18394 , H01S5/34313 , H01S2301/166
摘要： A VCSEL includes a substrate, a first semiconductor multilayer of a first conductivity-type, an active layer, a second semiconductor multilayer of a second conductivity-type, a contact layer, each of the layers stacked on the substrate. The second semiconductor multilayer constitutes a resonator together with the active layer and the first semiconductor multilayer. A metal layer is formed on the contact layer. The metal layer includes an opening portion that defines a region that emits laser light. When oscillation wavelength of the laser light is λ, optical thickness T of the contact layer and a top layer of the second semiconductor multilayer that contacts with the contact layer is smaller than λ/4.
摘要翻译： VCSEL包括基板，第一导电类型的第一半导体多层，有源层，第二导电类型的第二半导体层，接触层，层叠在基板上。 第二半导体多层与有源层和第一半导体多层构成谐振器。 在接触层上形成金属层。 金属层包括限定发射激光的区域的开口部分。 当激光的振荡波长为λ时，接触层的光学厚度T和与接触层接触的第二半导体多层的顶层小于λ/ 4。
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6.发明授权Vertical-cavity surface-emitting laser, module, optical transmission device, free space optical communication device, optical transmission system, and free space optical communication system 有权垂直腔表面发射激光器，模块，光传输装置，自由空间光通信装置，光传输系统和自由空间光通信系统公开(公告)号：US07751459B2
公开(公告)日：2010-07-06
申请号：US12330118
申请日：2008-12-08
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/005 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/06226 , H01S5/18361 , H01S5/305 , H01S5/3054 , H01S5/3077 , H01S5/3432
摘要： Provided is a VCSEL that includes: a first semiconductor multilayer film reflective mirror of a first conductivity type formed on a substrate; an active region formed thereon; a current confining layer of a second conductivity type formed thereon; a second semiconductor multilayer film reflective mirror of the second conductivity type formed thereon; and a third semiconductor multilayer film reflective mirror of the second conductivity type formed thereon. The reflective mirrors include a pair of a high refractive index layer and a low refractive index layer. The impurity concentration of the second reflective mirror is higher than that of the third reflective mirror. The band gap energy of the high refractive index layer in the second reflective mirror is greater than the energy of the wavelength of a resonator formed of the first reflective mirror, the active region, the current confining layer, the second reflective mirror, and the third reflective mirror.
摘要翻译： 提供一种VCSEL，其包括：形成在基板上的第一导电类型的第一半导体多层膜反射镜; 形成在其上的有源区; 形成在其上的第二导电类型的电流限制层; 在其上形成第二导电类型的第二半导体多层膜反射镜; 以及形成在其上的第二导电类型的第三半导体多层膜反射镜。 反射镜包括一对高折射率层和低折射率层。 第二反射镜的杂质浓度高于第三反射镜的杂质浓度。 第二反射镜中的高折射率层的带隙能量大于由第一反射镜，有源区，电流限制层，第二反射镜和第三反射镜形成的谐振器的波长的能量 反光镜。
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7.发明授权VCSEL, manufacturing method thereof, module, light sending device, optical spatial transmission device, light sending system, and optical spatial transmission system 有权VCSEL及其制造方法，模块，发光装置，光学空间传输装置，发光系统和光学空间传输系统公开(公告)号：US07596163B2
公开(公告)日：2009-09-29
申请号：US11803468
申请日：2007-05-15
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/18375 , H01S5/18377 , H01S5/18383 , H01S5/18394 , H01S5/34313 , H01S2301/166
摘要： A VCSEL includes a substrate, a first semiconductor multilayer of a first conductivity-type, an active layer, a second semiconductor multilayer of a second conductivity-type, a contact layer, each of the layers stacked on the substrate. The second semiconductor multilayer constitutes a resonator together with the active layer and the first semiconductor multilayer. A metal layer is formed on the contact layer. The metal layer includes an opening portion that defines a region that emits laser light. When oscillation wavelength of the laser light is λ, optical thickness T of the contact layer and a top layer of the second semiconductor multilayer that contacts with the contact layer is smaller than λ/4.
摘要翻译： VCSEL包括基板，第一导电类型的第一半导体多层，有源层，第二导电类型的第二半导体层，接触层，层叠在基板上。 第二半导体多层与有源层和第一半导体多层构成谐振器。 在接触层上形成金属层。 金属层包括限定发射激光的区域的开口部分。 当激光的振荡波长为λ时，接触层的光学厚度T和与接触层接触的第二半导体多层的顶层小于λ/ 4。
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8.发明授权Vertical-cavity surface-emitting laser, module, optical transmission device, optical transmission system, free space optical communication device, and free space optical communication system 有权垂直腔表面发射激光器，模块，光传输设备，光传输系统，自由空间光通信设备和自由空间光通信系统公开(公告)号：US07817703B2
公开(公告)日：2010-10-19
申请号：US12274439
申请日：2008-11-20
IPC分类号： H01S3/08
CPC分类号： H01S5/18311 , H01S5/02284 , H01S5/02288 , H01S5/305
摘要： Provided is a VCSEL that includes a first semiconductor multilayer film reflective mirror of a first conductivity type formed on a substrate and having a first impurity concentration; an active region formed thereon; a second semiconductor multilayer film reflective mirror of a second conductivity type formed on and close to the active region and having a second impurity concentration; a third semiconductor multilayer film reflective mirror of the second conductivity type formed thereon and having a third impurity concentration being higher than the second impurity concentration; and a fourth semiconductor multilayer film reflective mirror of the second conductivity type formed thereon and having a fourth impurity concentration being higher than the second impurity concentration. The reflective mirrors include a pair of a low-Al semiconductor layer and a high-Al semiconductor layer. The Al-composition of the low-Al semiconductor layer in the second reflective mirror is higher than that of the fourth mirror.
摘要翻译： 提供一种VCSEL，其包括形成在基板上并具有第一杂质浓度的第一导电类型的第一半导体多层膜反射镜; 形成在其上的有源区; 第二导电类型的第二半导体多层膜反射镜形成在有源区并且靠近有源区并且具有第二杂质浓度; 形成在其上并具有高于第二杂质浓度的第三杂质浓度的第二导电类型的第三半导体多层膜反射镜; 以及形成在其上并具有高于第二杂质浓度的第四杂质浓度的第二导电类型的第四半导体多层膜反射镜。 反射镜包括一对低Al半导体层和高Al半导体层。 第二反射镜中的低Al半导体层的Al组成高于第四反射镜。
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9.发明申请VERTICAL-CAVITY SURFACE-EMITTING LASER, MODULE, OPTICAL TRANSMISSION DEVICE, OPTICAL TRANSMISSION SYSTEM, FREE SPACE OPTICAL COMMUNICATION DEVICE, AND FREE SPACE OPTICAL COMMUNICATION SYSTEM 有权垂直表面发射激光器，模块，光传输设备，光传输系统，自由空间光通信设备和自由空间光通信系统公开(公告)号：US20090201965A1
公开(公告)日：2009-08-13
申请号：US12274439
申请日：2008-11-20
IPC分类号： H01S5/183
CPC分类号： H01S5/18311 , H01S5/02284 , H01S5/02288 , H01S5/305
摘要： Provided is a VCSEL that includes a first semiconductor multilayer film reflective mirror of a first conductivity type formed on a substrate and having a first impurity concentration; an active region formed thereon; a second semiconductor multilayer film reflective mirror of a second conductivity type formed on and close to the active region and having a second impurity concentration; a third semiconductor multilayer film reflective mirror of the second conductivity type formed thereon and having a third impurity concentration being higher than the second impurity concentration; and a fourth semiconductor multilayer film reflective mirror of the second conductivity type formed thereon and having a fourth impurity concentration being higher than the second impurity concentration. The reflective mirrors include a pair of a low-Al semiconductor layer and a high-Al semiconductor layer. The Al-composition of the low-Al semiconductor layer in the second reflective mirror is higher than that of the fourth mirror.
摘要翻译： 提供一种VCSEL，其包括形成在基板上并具有第一杂质浓度的第一导电类型的第一半导体多层膜反射镜; 形成在其上的有源区; 第二导电类型的第二半导体多层膜反射镜形成在有源区并且靠近有源区并且具有第二杂质浓度; 形成在其上并具有高于第二杂质浓度的第三杂质浓度的第二导电类型的第三半导体多层膜反射镜; 以及形成在其上并具有高于第二杂质浓度的第四杂质浓度的第二导电类型的第四半导体多层膜反射镜。 反射镜包括一对低Al半导体层和高Al半导体层。 第二反射镜中的低Al半导体层的Al组成高于第四反射镜。
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10.发明申请VERTICAL-CAVITY SURFACE-EMITTING LASER, MODULE, OPTICAL TRANSMISSION DEVICE, FREE SPACE OPTICAL COMMUNICATION DEVICE, OPTICAL TRANSMISSION SYSTEM, AND FREE SPACE OPTICAL COMMUNICATION SYSTEM 有权垂直表面发射激光器，模块，光传输设备，自由空间光通信设备，光传输系统和自由空间光通信系统公开(公告)号：US20090201963A1
公开(公告)日：2009-08-13
申请号：US12330118
申请日：2008-12-08
IPC分类号： H01S5/183
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/005 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/06226 , H01S5/18361 , H01S5/305 , H01S5/3054 , H01S5/3077 , H01S5/3432
摘要： Provided is a VCSEL that includes: a first semiconductor multilayer film reflective mirror of a first conductivity type formed on a substrate; an active region formed thereon; a current confining layer of a second conductivity type formed thereon; a second semiconductor multilayer film reflective mirror of the second conductivity type formed thereon; and a third semiconductor multilayer film reflective mirror of the second conductivity type formed thereon. The reflective mirrors include a pair of a high refractive index layer and a low refractive index layer. The impurity concentration of the second reflective mirror is higher than that of the third reflective mirror. The band gap energy of the high refractive index layer in the second reflective mirror is greater than the energy of the wavelength of a resonator formed of the first reflective mirror, the active region, the current confining layer, the second reflective mirror, and the third reflective mirror.
摘要翻译： 提供一种VCSEL，其包括：形成在基板上的第一导电类型的第一半导体多层膜反射镜; 形成在其上的有源区; 形成在其上的第二导电类型的电流限制层; 在其上形成第二导电类型的第二半导体多层膜反射镜; 以及形成在其上的第二导电类型的第三半导体多层膜反射镜。 反射镜包括一对高折射率层和低折射率层。 第二反射镜的杂质浓度高于第三反射镜的杂质浓度。 第二反射镜中的高折射率层的带隙能量大于由第一反射镜，有源区，电流限制层，第二反射镜和第三反射镜形成的谐振器的波长的能量 反光镜。
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