公开(公告)号：US11749964B2

公开(公告)日：2023-09-05

申请号：US16911294

申请日：2020-06-24

申请人： Meta Platforms Technologies, LLC

发明人： Maik Andre Scheller ,  Anurag Tyagi

IPC分类号： H01S5/00 ,  H01S5/06 ,  H01S5/065 ,  H01S5/14 ,  H01S5/42 ,  H01S5/20 ,  H01S5/183 ,  H01S5/34

CPC分类号： H01S5/0604 ,  H01S5/0657 ,  H01S5/141 ,  H01S5/1833 ,  H01S5/18311 ,  H01S5/18333 ,  H01S5/18336 ,  H01S5/2086 ,  H01S5/423 ,  H01S5/14 ,  H01S5/18388 ,  H01S5/34

摘要： A semiconductor light source including a planar optical component that focuses long-wavelength (e.g., infrared) light emitted in a resonant cavity into a nonlinear crystal, which then converts the long-wavelength light into light having a shorter wavelength (e.g., visible light) by frequency doubling. A wavelength-selective reflection layer on the nonlinear crystal reflects the long-wavelength light back into the resonant cavity to form an external cavity and transmits the light having the shorter wavelength out of the external cavity. The resonant cavity includes an active region that emits the long-wavelength light at a high efficiency. The planar optical component includes a micro-lens formed in semiconductor layers or a gradient refractive index lens formed in the nonlinear crystal.

公开(公告)号：US20150380901A1

公开(公告)日：2015-12-31

申请号：US14804367

申请日：2015-07-21

申请人： Vixar Inc.

发明人： Mary K. Brenner ,  Klein L. Johnson ,  Matthew M. Dummer

IPC分类号： H01S5/183 ,  H01S5/187 ,  H01S5/343

CPC分类号： H01S5/1833 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/18327 ,  H01S5/18333 ,  H01S5/18336 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18394 ,  H01S5/187 ,  H01S5/2063 ,  H01S5/34326 ,  H01S2301/166

摘要： VCSELs and methods having improved characteristics. In some embodiments, these include a semiconductor substrate; a vertical-cavity surface-emitting laser (VCSEL) on the substrate; a first electrical contact formed on the VCSEL; a second electrical contact formed on the substrate, wherein the VCSEL includes: a first resonating cavity having first and second mirrors, at least one of which partially transmits light incident on that mirror, wherein the first second mirrors are electrically conductive. A first layer is between the first mirror and the second mirror and has a first aperture that restricts the path of current flow. A second layer is between the first layer and the second mirror and also restricts the electrical current path. A multiple-quantum-well (MQW) structure is between the first mirror and the second mirror, wherein the first and second apertures act together to define a path geometry of the current through the MQW structure.

摘要翻译： 具有改进特性的VCSEL和方法。 在一些实施例中，这些包括半导体衬底; 衬底上的垂直腔表面发射激光器（VCSEL）; 在VCSEL上形成的第一电接触; 形成在所述基板上的第二电触点，其中所述VCSEL包括：具有第一和第二反射镜的第一谐振腔，其中至少一个部分透射入射在所述反射镜上的光，其中所述第一第二反射镜是导电的。 第一层位于第一反射镜和第二反射镜之间，并且具有限制电流流动路径的第一孔。 第二层位于第一层和第二层之间，也限制了电流路径。 多量子阱（MQW）结构在第一反射镜和第二反射镜之间，其中第一和第二孔一起作用以限定通过MQW结构的电流的路径几何形状。

公开(公告)号：US08031755B2

公开(公告)日：2011-10-04

申请号：US12559609

申请日：2009-09-15

申请人： Masahiro Yoshikawa

发明人： Masahiro Yoshikawa

IPC分类号： H01S5/183

CPC分类号： H01S5/1833 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/18313 ,  H01S5/18333 ,  H01S5/18336 ,  H01S5/18347 ,  H01S5/18391

摘要： A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflection mirror of a first conduction type; an active region; a second semiconductor multilayer reflection mirror of a second conduction type; a first selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a first oxidized region selectively oxidized, and a first conductive region surrounded by the first oxidized region; and a second selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a second oxidized region selectively oxidized, and a second conductive region surrounded by the second oxidized region. A first semiconductor layer next to the first selectively oxidized layer has an Al composition greater than that of a second semiconductor layer next to the second selectively oxidized layer, the first conductive region having a size smaller than that of the second conductive region.

摘要翻译： 表面发射半导体激光器包括：基板; 第一导电类型的第一半导体多层反射镜; 活跃区域 第二导电类型的第二半导体多层反射镜; 第一选择性氧化层，其形成在第一和第二半导体多层反射镜之一中，并且包括被选择性氧化的第一氧化区域和由第一氧化区域包围的第一导电区域; 以及第二选择性氧化层，其形成在所述第一和第二半导体多层反射镜之一中，并且包括被选择性氧化的第二氧化区域和被所述第二氧化区域包围的第二导电区域。 与第二选择氧化层相邻的第一半导体层的Al组成大于第二选择氧化层旁边的第二半导体层的Al组成，第一导电区的尺寸小于第二导电区的尺寸。

公开(公告)号：US10014661B2

公开(公告)日：2018-07-03

申请号：US14804367

申请日：2015-07-21

申请人： Vixar Inc.

发明人： Mary K. Brenner ,  Klein L. Johnson ,  Matthew M. Dummer

IPC分类号： H01S5/183 ,  H01S5/187 ,  H01S5/343 ,  H01S5/20

CPC分类号： H01S5/1833 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/18327 ,  H01S5/18333 ,  H01S5/18336 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18394 ,  H01S5/187 ,  H01S5/2063 ,  H01S5/34326 ,  H01S2301/166

摘要： VCSELs and methods having improved characteristics. In some embodiments, these include a semiconductor substrate; a vertical-cavity surface-emitting laser (VCSEL) on the substrate; a first electrical contact formed on the VCSEL; a second electrical contact formed on the substrate, wherein the VCSEL includes: a first resonating cavity having first and second mirrors, at least one of which partially transmits light incident on that mirror, wherein the first second mirrors are electrically conductive. A first layer is between the first mirror and the second mirror and has a first aperture that restricts the path of current flow. A second layer is between the first layer and the second mirror and also restricts the electrical current path. A multiple-quantum-well (MQW) structure is between the first mirror and the second mirror, wherein the first and second apertures act together to define a path geometry of the current through the MQW structure.

公开(公告)号：US20100111125A1

公开(公告)日：2010-05-06

申请号：US12471588

申请日：2009-05-26

申请人： Takashi Kondo

发明人： Takashi Kondo

IPC分类号： H01S5/183 ,  H01S5/00 ,  H01L21/00

CPC分类号： H01S5/1833 ,  G02B6/4206 ,  H01S5/0655 ,  H01S5/18311 ,  H01S5/18333 ,  H01S5/18336 ,  H01S5/18352 ,  H01S5/3095 ,  H01S2301/166 ,  H01S2302/00

摘要： Provided is a VCSEL that includes a lower DBR of a first conductivity type, an active region, and an upper DBR of a second conductivity type, on a substrate. The lower DBR has a first to-be-oxidized Al-containing layer located farther from the active region than a second to-be-oxidized layer that is formed in the upper DBR. Both layers have an oxidized region and a first or a second non-oxidized region surrounded by the oxidized region. The first non-oxidized region is larger than the maximum size of the second non-oxidized region for a single mode oscillation, and smaller than the maximum size of the first non-oxidized region for a single mode oscillation. The second non-oxidized region is larger than the maximum size of the second non-oxidized region for a single mode oscillation. The first non-oxidized region has a size equal to or larger than that of the second non-oxidized region.

摘要翻译： 提供了一种在衬底上包括第一导电类型的下DBR，有源区和第二导电类型的上DBR的VCSEL。 较低的DBR具有比活性区域更远的第一待氧化的含Al层，而不是形成在上DBR中的第二被氧化层。 两层都具有被氧化区域包围的氧化区域和第一或第二非氧化区域。 第一非氧化区域大于单模振荡的第二非氧化区域的最大尺寸，并且小于单模振荡的第一非氧化区域的最大尺寸。 第二非氧化区域大于单模振荡的第二非氧化区域的最大尺寸。 第一非氧化区域的尺寸等于或大于第二非氧化区域的尺寸。

公开(公告)号：US20100046565A1

公开(公告)日：2010-02-25

申请号：US12458962

申请日：2009-07-28

申请人： Yuji Masui ,  Takahiro Arakida ,  Rintaro Koda ,  Osamu Maeda ,  Tomoyuki Oki ,  Naoki Jogan

发明人： Yuji Masui ,  Takahiro Arakida ,  Rintaro Koda ,  Osamu Maeda ,  Tomoyuki Oki ,  Naoki Jogan

IPC分类号： H01S5/183 ,  H01S5/028

CPC分类号： H01S5/18336 ,  H01S5/0655 ,  H01S5/18311 ,  H01S5/18316 ,  H01S5/18358 ,  H01S2301/166

摘要： A vertical cavity surface emitting laser includes a layer-stack structure including, on a substrate, a transverse-mode adjustment layer, a first multilayer reflecting mirror, an active layer having a light emission region, and a second multilayer reflecting mirror in order from the substrate side, and including a current confinement layer in which a current injection region is formed in a region corresponding to the light emission region in the first multilayer reflecting mirror, between the first multilayer reflecting mirror and the active layer, between the active layer and the second multilayer reflecting mirror, or in the second multilayer reflecting mirror. In the transverse-mode adjustment layer, reflectance at an oscillation wavelength in the region opposite to a center of the light emission region is higher than that at an oscillation wavelength in the region opposite to an outer edge of the light emission region.

摘要翻译： 垂直腔表面发射激光器包括层叠结构，其包括在基板上的横向模式调整层，第一多层反射镜，具有发光区域的有源层和第二多层反射镜，从 并且包括电流限制层，其中在与第一多层反射镜中的发光区域对应的区域中在第一多层反射镜和有源层之间形成电流注入区域，在有源层和 第二多层反射镜，或第二多层反射镜。 在横模调整层中，与发光区域的中心相反的区域的振荡波长的反射率高于与发光区域的外缘相反的区域的振荡波长的反射率。

公开(公告)号：US09088134B2

公开(公告)日：2015-07-21

申请号：US13559821

申请日：2012-07-27

申请人： Mary K. Hibbs-Brenner ,  Klein L. Johnson ,  Matthew M. Dummer

发明人： Mary K. Hibbs-Brenner ,  Klein L. Johnson ,  Matthew M. Dummer

IPC分类号： H01S5/183 ,  H01S5/20

CPC分类号： H01S5/1833 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/18327 ,  H01S5/18333 ,  H01S5/18336 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18394 ,  H01S5/187 ,  H01S5/2063 ,  H01S5/34326 ,  H01S2301/166

摘要： VCSELs and methods having improved characteristics. In some embodiments, these include a semiconductor substrate; a vertical-cavity surface-emitting laser (VCSEL) on the substrate; a first electrical contact formed on the VCSEL; a second electrical contact formed on the substrate, wherein the VCSEL includes: a first resonating cavity having first and second mirrors, at least one of which partially transmits light incident on that mirror, wherein the first second mirrors are electrically conductive. A first layer is between the first mirror and the second mirror and has a first aperture that restricts the path of current flow. A second layer is between the first layer and the second mirror and also restricts the electrical current path. A multiple-quantum-well (MQW) structure is between the first mirror and the second mirror, wherein the first and second apertures act together to define a path geometry of the current through the MQW structure.

摘要翻译： 具有改进特性的VCSEL和方法。 在一些实施例中，这些包括半导体衬底; 衬底上的垂直腔表面发射激光器（VCSEL）; 在VCSEL上形成的第一电接触; 形成在所述基板上的第二电触点，其中所述VCSEL包括：具有第一和第二反射镜的第一谐振腔，其中至少一个部分透射入射在所述反射镜上的光，其中所述第一第二反射镜是导电的。 第一层位于第一反射镜和第二反射镜之间，并且具有限制电流流动路径的第一孔。 第二层位于第一层和第二层之间，也限制了电流路径。 多量子阱（MQW）结构在第一反射镜和第二反射镜之间，其中第一和第二孔一起作用以限定通过MQW结构的电流的路径几何形状。

公开(公告)号：US20130034117A1

公开(公告)日：2013-02-07

申请号：US13559821

申请日：2012-07-27

申请人： Mary K. Hibbs-Brenner ,  Klein L. Johnson ,  Matthew M. Dummer

发明人： Mary K. Hibbs-Brenner ,  Klein L. Johnson ,  Matthew M. Dummer

IPC分类号： H01S5/34 ,  H01S5/02 ,  H01L33/04

CPC分类号： H01S5/1833 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/18327 ,  H01S5/18333 ,  H01S5/18336 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18394 ,  H01S5/187 ,  H01S5/2063 ,  H01S5/34326 ,  H01S2301/166

摘要： VCSELs and methods having improved characteristics. In some embodiments, these include a semiconductor substrate; a vertical-cavity surface-emitting laser (VCSEL) on the substrate; a first electrical contact formed on the VCSEL; a second electrical contact formed on the substrate, wherein the VCSEL includes: a first resonating cavity having first and second mirrors, at least one of which partially transmits light incident on that mirror, wherein the first second mirrors are electrically conductive. A first layer is between the first mirror and the second mirror and has a first aperture that restricts the path of current flow. A second layer is between the first layer and the second mirror and also restricts the electrical current path. A multiple-quantum-well (MQW) structure is between the first mirror and the second mirror, wherein the first and second apertures act together to define a path geometry of the current through the MQW structure.

公开(公告)号：US07924899B2

公开(公告)日：2011-04-12

申请号：US12471588

申请日：2009-05-26

申请人： Takashi Kondo

发明人： Takashi Kondo

IPC分类号： H01S5/00

CPC分类号： H01S5/1833 ,  G02B6/4206 ,  H01S5/0655 ,  H01S5/18311 ,  H01S5/18333 ,  H01S5/18336 ,  H01S5/18352 ,  H01S5/3095 ,  H01S2301/166 ,  H01S2302/00

摘要： Provided is a VCSEL that includes a lower DBR of a first conductivity type, an active region, and an upper DBR of a second conductivity type, on a substrate. The lower DBR has a first to-be-oxidized Al-containing layer located farther from the active region than a second to-be-oxidized layer that is formed in the upper DBR. Both layers have an oxidized region and a first or a second non-oxidized region surrounded by the oxidized region. The first non-oxidized region is larger than the maximum size of the second non-oxidized region for a single mode oscillation, and smaller than the maximum size of the first non-oxidized region for a single mode oscillation. The second non-oxidized region is larger than the maximum size of the second non-oxidized region for a single mode oscillation. The first non-oxidized region has a size equal to or larger than that of the second non-oxidized region.

摘要翻译： 提供了一种在衬底上包括第一导电类型的下DBR，有源区和第二导电类型的上DBR的VCSEL。 较低的DBR具有比活性区域更远的第一待氧化的含Al层，而不是形成在上DBR中的第二被氧化层。 两层都具有被氧化区域包围的氧化区域和第一或第二非氧化区域。 第一非氧化区域大于单模振荡的第二非氧化区域的最大尺寸，并且小于单模振荡的第一非氧化区域的最大尺寸。 第二非氧化区域大于单模振荡的第二非氧化区域的最大尺寸。 第一非氧化区域的尺寸等于或大于第二非氧化区域的尺寸。

公开(公告)号：US07724799B2

公开(公告)日：2010-05-25

申请号：US12110448

申请日：2008-04-28

申请人： Masateru Yamamoto ,  Masahiro Yoshikawa ,  Takashi Kondo

发明人： Masateru Yamamoto ,  Masahiro Yoshikawa ,  Takashi Kondo

IPC分类号： H01S5/00

CPC分类号： H01S5/18308 ,  B41J2/45 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/06804 ,  H01S5/0683 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/18336

摘要： A VCSEL includes a first distributed Bragg reflector (DBR) of a first conductivity type formed on a substrate and including at least one semiconductor layer to be oxidized, an active region having a column shaped structure and formed on the first DBR, and a second DBR of a second conductivity type. At least one hole starting from a surface of the first DBR and reaching the at least one semiconductor layer to be oxidized is formed in the first DBR outside of a column shaped structure of the second DBR. An oxidized region is formed in the semiconductor layer to be oxidized by selectively oxidizing from a side surface of the hole. In the first DBR, a first current path is formed by a conductive region surrounded by the oxidized region, and a second current path is formed by a conductive region not surrounded by the oxidized region.

摘要翻译： VCSEL包括第一导电类型的第一分布布拉格反射器（DBR），其形成在衬底上并且包括至少一个要被氧化的半导体层，形成在第一DBR上的具有柱状结构的有源区和第二DBR 的第二导电类型。 从第一DBR的表面开始并到达要被氧化的至少一个半导体层的至少一个孔形成在第二DBR的列形结构外侧的第一DBR中。 通过从孔的侧面选择性氧化，在半导体层中形成被氧化的氧化区域。 在第一DBR中，第一电流路径由被氧化区域包围的导电区域形成，并且第二电流路径由未被氧化区域包围的导电区域形成。