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    Active-matrix liquid crystal display apparatus and method for driving the same and for manufacturing the same
    11.
    发明授权
    Active-matrix liquid crystal display apparatus and method for driving the same and for manufacturing the same 有权
    有源矩阵液晶显示装置及其驱动方法及其制造方法

    公开(公告)号：US06864871B1

    公开(公告)日：2005-03-08

    申请号：US09693044

    申请日：2000-10-20

    申请人： Yoshihiro Okada ,  Atsushi Ban ,  Masaya Okamoto

    发明人： Yoshihiro Okada ,  Atsushi Ban ,  Masaya Okamoto

    IPC分类号： G02F1/133 ,  G02F1/136 ,  G09G3/20 ,  G09G3/36

    CPC分类号： G09G3/3655 ,  G09G3/006 ,  G09G2330/10

    摘要： An object of the invention is to increase the rate of conforming articles by reducing defects due to leakage of supplementary capacitances in an active-matrix liquid crystal display apparatus of a Cs on Com structure having supplementary capacitances. In a normally-white mode active-matrix liquid crystal display apparatus, a plurality of gate signal lines and source signal lines are formed so as to intersect at right angles, pixel capacitors are connected to the intersections through TFTs, and image display is performed. To the pixel capacitors, supplementary capacitances are connected in parallel. Supplementary capacitance lines are driven by a supplementary capacitance drive circuit so that a potential difference not less than a threshold value of the liquid crystal is maintained from common signal lines on a counter electrode substrate. When a leakage occurs at a supplementary capacitance, the potential difference not less than the threshold value of the liquid crystal is maintained at both ends of the pixel capacitor, so that the pixel is prevented from becoming a bright point and the active-matrix liquid crystal display apparatus is prevented from being defective. Consequently, the rate of conforming articles can be increased.

    摘要翻译： 本发明的目的是通过减少具有补充电容的Cs-Com结构的有源矩阵液晶显示装置中由于补充电容的泄漏而引起的缺陷来提高一致性物品的速率。 在常白模式的有源矩阵液晶显示装置中，多个栅极信号线和源极信号线形成为直角相交，像素电容通过TFT连接到交点，进行图像显示。 对于像素电容器，辅助电容并联连接。 补充电容线由辅助电容驱动电路驱动，使得相对电极基板上的公共信号线保持不低于液晶的阈值的电位差。 当在辅助电容处发生泄漏时，在像素电容器的两端保持不低于液晶的阈值的电位差，从而防止像素变为亮点，并且有源矩阵液晶 防止显示装置发生故障。 因此，可以增加符合条件的速度。

    Active matrix substrate, method of making the substrate, and display device
    14.
    发明申请
    Active matrix substrate, method of making the substrate, and display device 有权
    有源矩阵基板，制造基板的方法和显示装置

    公开(公告)号：US20050023557A1

    公开(公告)日：2005-02-03

    申请号：US10921620

    申请日：2004-08-19

    申请人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

    发明人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

    IPC分类号： G02F1/1333 ,  G02F1/1343 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/00 ,  G09F9/30 ,  G09F9/35 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L31/072

    CPC分类号： H01L29/78603 ,  G02F1/1362 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66765

    摘要： An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.

    摘要翻译： 有源矩阵基板包括基底，栅线，数据线，薄膜晶体管和像素电极。 栅极线形成在基底基板上。 数据线形成在栅极线上。 每条数据线都插入绝缘膜，与所有栅极线交叉。 薄膜晶体管形成在基底基板上。 每个薄膜晶体管与一条栅极线路相关联，并且响应于相关联的栅极线上的信号而工作。 每个像素电极与数据线之一和薄膜晶体管中的一个相关联，并且可通过相关联的薄膜晶体管电连接到相关联的数据线。 每个像素电极和相关联的薄膜晶体管通过导电构件连接在一起。 每个像素电极与一条栅极线交叉，而用于像素电极的导电构件与另一条与前一栅极线相邻的栅极线交叉。

    Manufacturing method of a thin-film transistor
    15.
    发明授权
    Manufacturing method of a thin-film transistor 失效
    薄膜晶体管的制造方法

    公开(公告)号：US5953583A

    公开(公告)日：1999-09-14

    申请号：US887136

    申请日：1997-07-02

    申请人： Atsushi Ban ,  Hisataka Suzuki ,  Masaya Okamoto

    发明人： Atsushi Ban ,  Hisataka Suzuki ,  Masaya Okamoto

    IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/336 ,  H01L29/786 ,  H01L21/306 ,  H01L21/84

    CPC分类号： H01L29/66765

    摘要： A thin-film transistor of the reversed stagger type is provided with a gate electrode, first and second gate insulating films, a semiconductor layer, separated contact layers, and source electrodes and drain electrodes, all of which are stacked on a substrate. Upon manufacturing the thin-film transistor of this type, a gap section is pattered in a single contact-material layer. In this case, the contact-material layer is patterned by carrying out etching by the use of the source electrode and drain electrode as direct masks or by the use of a resist pattern that was used for forming the respective electrodes. Upon patterning a gap section in the contact-material layer between the source electrode and the drain electrode, no dedicated resist pattern is required; therefore, it is possible to reduce the number of the processes as compared with conventional manufacturing methods. Consequently, it becomes possible to reduce the production cost of thin-film transistors and also to improve the yield of desired products.

    摘要翻译： 反向交错型薄膜晶体管设置有栅电极，第一和第二栅极绝缘膜，半导体层，分离的接触层以及源极和漏极，所有这些都堆叠在基板上。 在制造这种类型的薄膜晶体管时，在单个接触材料层中将间隙部分图案化。 在这种情况下，通过使用源电极和漏电极作为直接掩模或通过使用用于形成各个电极的抗蚀剂图案进行蚀刻来对接触材料层进行图案化。 在图案化源电极和漏电极之间的接触材料层中的间隙部分时，不需要专用抗蚀剂图案; 因此，与传统的制造方法相比，可以减少处理次数。 因此，可以降低薄膜晶体管的生产成本，并且还可以提高所需产品的产量。