公开(公告)号：US07002831B2

公开(公告)日：2006-02-21

申请号：US10715448

申请日：2003-11-19

申请人： Hideyuki Matsuoka ,  Kenchi Ito ,  Takeshi Sakata ,  Kiyoo Itoh

发明人： Hideyuki Matsuoka ,  Kenchi Ito ,  Takeshi Sakata ,  Kiyoo Itoh

IPC分类号： G11C17/02

CPC分类号： G11C11/16

摘要： A memory cell in a so-called MRAM by utilizing a tunnel magnetic resistance in the prior art has raised problems that a magnetic field to be applied to a TMR element is essentially weak since a word line for write is disposed apart from the TMR element, that a large current is required at the time of a writing operation, and that electric power consumption is large. In order to solve the above-described problems experienced in the prior art, the present invention provides an MRAM memory cell structure and its fabricating method in which a word line for write is disposed near a TMR element and surrounds it in three directions.

摘要翻译： 通过利用现有技术中的隧道磁阻，在所谓的MRAM中的存储单元已经引起了由于用于写入的字线与TMR元件分开而被施加到TMR元件的磁场基本上是弱的问题， 在写入操作时需要大的电流，并且电力消耗大。 为了解决现有技术中遇到的上述问题，本发明提供了一种MRAM存储单元结构及其制造方法，其中用于写入的字线被设置在TMR元件附近并且在三个方向上包围它。

公开(公告)号：US20050163962A1

公开(公告)日：2005-07-28

申请号：US10893887

申请日：2004-07-20

申请人： Yoshiaki Kawato ,  Kenchi Ito

发明人： Yoshiaki Kawato ,  Kenchi Ito

IPC分类号： G11B5/02 ,  G11B5/64 ,  G11B5/65 ,  G11B5/66 ,  G11B5/738 ,  G11B11/10 ,  G11B11/105

CPC分类号： G11B5/656 ,  G11B5/65 ,  G11B5/66 ,  Y10T428/265

摘要： A perpendicular magnetic recording medium for thermo-magnetic printing has an ultra-high recording density and is resistant to thermal decay of magnetization. An intermediate layer of the medium is provided between a first recording layer using a low-noise Co alloy ferromagnetic substance and a second recording layer using a ferrimagnetic substance (e.g., a rare-earth element-transition metal compound) having a compensation temperature below an operation ambient temperature. A magnetic field is applied thereto to form a magnetization pattern on the first recording layer. It is then heated-up to be printed onto the second recording layer, which has a higher coercivity at the ambient temperature, and a recording field is suitably set to form a magnetization pattern only on the first recording layer. The magnetization pattern is printed from the first recording layer to the second recording layer.

摘要翻译： 用于热磁性印刷的垂直磁记录介质具有超高记录密度，并且耐磁化热衰减。 介质的中间层设置在使用低噪声Co合金铁磁性物质的第一记录层和使用补偿温度低于1的亚铁磁物质（例如，稀土元素 - 过渡金属化合物）的第二记录层之间 操作环境温度。 施加磁场以在第一记录层上形成磁化模式。 然后将其加热印刷到在环境温度下具有较高矫顽力的第二记录层上，并且适当地设置记录场以仅在第一记录层上形成磁化图案。 磁化图案从第一记录层印刷到第二记录层。

公开(公告)号：US20050128886A1

公开(公告)日：2005-06-16

申请号：US10788437

申请日：2004-03-01

申请人： Susumu Ogawa ,  Kenchi Ito

发明人： Susumu Ogawa ,  Kenchi Ito

IPC分类号： G11B5/66 ,  D06N7/04 ,  G11B5/02 ,  G11B5/738 ,  G11B9/14 ,  G11B11/00

CPC分类号： G11B9/1472 ,  G11B5/743 ,  G11B9/14 ,  G11B9/1481 ,  G11B2005/0002

摘要： An information storage device having a hard disk has a metal probe that is brought closely to the surface of a multilayer film that includes a magnetic metal layer, a non-magnetic metal layer, and a magnetic metal layer up to a nano-meter order distance from the surface. The distance between the metal probe and the surface of the multilayer film, as well as the voltage to be applied are changed to change the state of the quantum well generated in the multilayer film, thereby changing the magnetizing direction relatively between the two magnetic metal layers. To read magnetization information from the hard disk, a change of an optically induced tunnel current is used. The change of the tunnel current is caused by a change of a plasmon resonance energy according to a relative change of the magnetizing direction between the magnetic metal layers.

摘要翻译： 具有硬盘的信息存储装置具有金属探针，该金属探针与包括磁性金属层，非磁性金属层和磁性金属层的多层膜的表面紧密接近，直到达到纳米级的距离 从表面。 改变金属探针与多层膜的表面之间的距离以及施加的电压，以改变在多层膜中产生的量子阱的状态，从而相对地改变两个磁性金属层之间的磁化方向 。 为了从硬盘读取磁化信息，使用光学感应隧道电流的改变。 隧道电流的变化是由等离子体共振能量根据磁性金属层之间的磁化方向的相对变化而改变引起的。

公开(公告)号：US20050002128A1

公开(公告)日：2005-01-06

申请号：US10845080

申请日：2004-05-14

申请人： Kenchi Ito ,  Hiromasa Takahashi

发明人： Kenchi Ito ,  Hiromasa Takahashi

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/3932

摘要： A magnetic head using a tunneling magnetoresistance effect realizing both high output and wide bandwidth. By providing a magnetic read head and magnetic reading/playback apparatus related to the present invention characterized by comprising: a lower magnetic shield, an upper magnetic shield, a first electrode layer formed on said lower magnetic shield, a first ferromagnetic layer laminated on one end of said first electrode layer through a first insulator, a second ferromagnetic layer laminated on another end of said first electrode layer through a second insulator, a detecting electrode connected to said first ferromagnetic layer, and a second electrode layer electrically connecting said second ferromagnetic layer with said upper magnetic shield; it becomes possible to reduce the capacitance between the first ferromagnetic layer and the insulator and widen the bandwidth of the detecting signal.

摘要翻译： 磁头采用隧道磁阻效应实现高输出和宽带宽。 通过提供与本发明相关的磁读头和磁读/重放装置，其特征在于包括：下磁屏蔽，上磁屏蔽，形成在所述下磁屏蔽上的第一电极层，在一端层叠的第一铁磁层 所述第一电极层通过第二绝缘体层叠在所述第一电极层的另一端上的第二铁磁层，连接到所述第一铁磁层的检测电极和将所述第二铁磁层与所述第二铁磁层电连接的第二电极层， 上磁屏蔽; 可以减小第一铁磁层与绝缘体之间的电容，并扩大检测信号的带宽。

公开(公告)号：US5946281A

公开(公告)日：1999-08-31

申请号：US913171

申请日：1997-09-05

申请人： Kenchi Ito ,  Toshimichi Shintani

发明人： Kenchi Ito ,  Toshimichi Shintani

IPC分类号： G11B7/09 ,  G11B7/12 ,  G11B7/13 ,  G11B7/135 ,  G11B11/105 ,  G11B7/00

CPC分类号： G11B7/1353 ,  G11B7/123 ,  G11B7/131 ,  G11B7/1372 ,  G11B7/1387 ,  G11B7/0943

摘要： The present invention provides an optical recording device which is of ultra-high density and is small in size. It comprises a subminiature optical head comprising in turn a semiconductor laser, a photodetector, grating lenses, a cover layer, and a floating slider on which the optical head is mounted. This configuration can provide an optical recording device which is of ultra-high recording density and is subminiature.

摘要翻译： PCT No.PCT / JP95 / 00374 Sec。 371日期：1997年9月5日 102（e）1997年9月5日PCT PCT 1995年8月3日PCT公布。 公开号WO96 / 27880 日期：1996年9月12日本发明提供一种超高密度且体积小的光记录装置。 它包括一个包括半导体激光器的微型光学头，光电检测器，光栅透镜，覆盖层和浮动的滑块，光学头安装在该浮动滑块上。 该配置可以提供具有超高记录密度并且超小型的光学记录装置。

公开(公告)号：US5187756A

公开(公告)日：1993-02-16

申请号：US758608

申请日：1991-09-12

申请人： Masataka Shiba ,  Akira Inagaki ,  Minoru Yoshida ,  Kenchi Ito ,  Kazumi Kawamoto

发明人： Masataka Shiba ,  Akira Inagaki ,  Minoru Yoshida ,  Kenchi Ito ,  Kazumi Kawamoto

IPC分类号： H03H9/25 ,  G02F1/125

CPC分类号： G02F1/125

摘要： The present invention relates to a surface acoustic wave element comprising a substrate, an optical waveguide layer formed on the aforesaid substrate to guide laser light from a laser light source, a surface acoustic wave portion for deflecting or modulating the laser light traveling through the aforesaid optical waveguide layer, a comb-shaped SAW electrode provided on the aforesaid optical waveguide layer to cause the aforesaid surface acoustic wave portion to generate surface acoustic wave, and a terminal provided on the aforesaid optical waveguide layer and connected to the aforesaid SAW electrode to apply a high-frequency alternating voltage thereto, wherein a protection cover is bonded by a viscoelastic adhesive having a refractive index smaller than that of the aforesaid optical waveguide layer to cover the aforesaid SAW electrode and surface acoustic wave portion with air space in such a manner that the aforesaid terminal is positioned outside thereof, and the manufacturing method of the surface acoustic wave element.

摘要翻译： 本发明涉及一种弹性表面波元件，包括基板，形成在上述基板上的用于引导来自激光光源的激光的光波导层，用于偏转或调制通过前述光学器件行进的激光的表面声波部分 波导层，设置在上述光波导层上的梳形SAW电极，使上述声表面波部分产生声表面波;以及端子，设置在上述光波导层上，并与上述SAW电极连接， 高频交流电压，其中保护盖通过具有比上述光波导层的折射率小的折射率的粘弹性粘合剂粘结，以覆盖上述SAW电极和具有空气空间的表面声波部分，使得 上述端子位于其外侧， 声表面波元件。

公开(公告)号：US20110222333A1

公开(公告)日：2011-09-15

申请号：US12994621

申请日：2009-05-26

申请人： Kenchi Ito

发明人： Kenchi Ito

IPC分类号： G11C11/00

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/224 ,  H01L43/08

摘要： Provided is a highly-integrated magnetic memory which employs applied spin torque magnetization reversal and does not require the switching of the current direction at the time of rewrite. The magnetic memory includes a memory cell in which a fixed layer made of a ferromagnetic material, a nonmagnetic layer, a recording layer made of a ferromagnetic material, a nonmagnetic layer, and a magnetization rotation assist layer made of a ferromagnetic material are stacked one on top of another. The magnetic memory performs recording by making the magnetization direction of the recording layer substantially parallel or substantially antiparallel to the magnetization direction of the fixed layer. The magnetization directions of the fixed layer, the recording layer, and the magnetization rotation assist layer are all oriented in substantially in-plane directions of the respective magnetic layers, and the magnetization direction of the magnetization rotation assist layer is at substantially 90 degrees to the magnetization direction of the fixed layer. The write current is caused to flow in a direction from the fixed layer to the recording layer in both cases where the magnetization direction of the recording layer is rewritten from a direction parallel to the magnetization direction of the fixed layer to a direction antiparallel thereto and where the magnetization direction of the recording layer is rewritten from the antiparallel direction to the parallel direction parallel.

摘要翻译： 提供了一种高度集成的磁存储器，其采用施加的自旋转矩磁化反转，并且不需要在重写时切换电流方向。 磁存储器包括存储单元，其中由铁磁材料制成的固定层，非磁性层，由铁磁材料制成的记录层，非磁性层和由铁磁材料制成的磁化旋转辅助层被堆叠在 另一个的顶端 磁记忆体通过使记录层的磁化方向与固定层的磁化方向基本上平行或基本上反平行地进行记录。 固定层，记录层和磁化旋转辅助层的磁化方向都在各个磁性层的大致面内方向上取向，并且磁化旋转辅助层的磁化方向基本上在90度 固定层的磁化方向。 在将记录层的磁化方向从与固定层的磁化方向平行的方向重写为与其平行的方向的两种情况下，使写入电流从固定层向记录层的方向流动，其中 记录层的磁化方向从反平行方向重新平行平行。

公开(公告)号：US07778068B2

公开(公告)日：2010-08-17

申请号：US12545363

申请日：2009-08-21

申请人： Takayuki Kawahara ,  Riichiro Takemura ,  Kenchi Ito ,  Hiromasa Takahashi

发明人： Takayuki Kawahara ,  Riichiro Takemura ,  Kenchi Ito ,  Hiromasa Takahashi

IPC分类号： G11C11/00

CPC分类号： H01L27/228 ,  G11C11/1653 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693

摘要： In a memory using spin transfer torque, state of the spin is made unstable by applying a weak pulse before rewriting to reduce rewrite current. Reading of high-speed operation is performed with current in a regime where the current becomes non-linearly increases corresponding to the pulse width to suppress disturb. Further, fluctuation of respective memory cells is suppressed by a driving method setting the amount of spin constant by bit line charge to suppress read disturb.

摘要翻译： 在使用自旋传递转矩的存储器中，通过在重写之前施加弱脉冲来减小重写电流使自旋状态变得不稳定。 利用电流在电流变得非线性地增加而与脉冲宽度对应的状态下进行高速运行的读取，以抑制干扰。 此外，通过利用位线电荷设定自旋常数的驱动方法来抑制各个存储单元的波动，以抑制读取干扰。

公开(公告)号：US07764538B2

公开(公告)日：2010-07-27

申请号：US12314577

申请日：2008-12-12

申请人： Kenchi Ito

发明人： Kenchi Ito

IPC分类号： G11C11/00

CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659

摘要： A magnetic random access memory which employs spin torque magnetization reversal having a small write current value is applied. The memory includes: a switching element the conduction of which is controlled by a gate electrode, and three magnetoresistance effect elements connected to the switching element in series. Each magnetoresistance effect element may be a TMR element or a GMR element that includes a multilayered film composed of a fixed layer, a non-magnetic layer and a free layer. The central element serves as a storage element. The magnetoresistance effect elements are manufactured such that an absolute value of current necessary for changing a magnetization direction of at least one of the magnetoresistance effect elements located at both ends is larger than an absolute value of current necessary for changing a magnetization direction of the central magnetoresistance effect element.

摘要翻译： 应用具有小的写入电流值的自旋转矩磁化反转的磁性随机存取存储器。 存储器包括：其导通由栅电极控制的开关元件，以及串联连接到开关元件的三个磁阻效应元件。 每个磁阻效应元件可以是包括由固定层，非磁性层和自由层构成的多层膜的TMR元件或GMR元件。 中心元件用作存储元件。 制造磁阻效应元件使得位于两端的至少一个磁阻效应元件的磁化方向的变化所需的电流绝对值大于改变中心磁阻的磁化方向所需的电流的绝对值 效果元素。

公开(公告)号：US20070258281A1

公开(公告)日：2007-11-08

申请号：US11606187

申请日：2006-11-30

申请人： Kenchi Ito ,  Hiromasa Takahashi ,  Takayuki Kawahara ,  Riichiro Takemura

发明人： Kenchi Ito ,  Hiromasa Takahashi ,  Takayuki Kawahara ,  Riichiro Takemura

IPC分类号： G11C11/02

CPC分类号： G11C11/15

摘要： A magnetic memory device comprises a magnetic tunnel junction (MTJ) having a ferromagnetic free layer, and exhibits a first, relatively high resistance state, and a second, relatively low resistance state. To write to the magnetic memory device a current IMTJ is driven through the MTJ. For a first duration, the current is equal to a DC threshold current, being the DC current required to switch the multilayer structure between the first state and the second state. This induces a C-like domain structure in the free layer. For a second duration, the current IMTJ is larger than the DC threshold current. This causes the MTJ to switch states. The current requited to cause switching is less than that required using a uniform current pulse.

摘要翻译： 磁存储器件包括具有铁磁性自由层的磁性隧道结（MTJ），并且呈现出第一相对高电阻状态和第二较低电阻状态。 为了写入磁存储器件，通过MTJ驱动电流I MTJ 。 对于第一持续时间，电流等于DC阈值电流，即在第一状态和第二状态之间切换多层结构所需的DC电流。 这在自由层中引起C样结构域结构。 在第二持续时间内，当前的电流电流大于直流阈值电流。 这导致MTJ切换状态。 导致切换的电流小于使用均匀电流脉冲所需的电流。