公开(公告)号：US20090236695A1

公开(公告)日：2009-09-24

申请号：US12393143

申请日：2009-02-26

申请人： Peter Storck ,  Martin Vorderwestner

发明人： Peter Storck ,  Martin Vorderwestner

IPC分类号： H01L29/12 ,  H01L21/20

CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0251

摘要： A multilayer semiconductor wafer has a substrate wafer having a first side and a second side; a fully or partially relaxed heteroepitaxial layer deposited on the first side of the substrate wafer; and a stress compensating layer deposited on the second side of the substrate wafer. The multilayer semiconductor wafer is produced by a method including depositing on a first side of a substrate a fully or partially relaxed heteroepitaxial layer at a deposition temperature; and at the same temperature or before significantly cooling the wafer from the deposition temperature, providing a stress compensating layer on a second side of the substrate.

摘要翻译： 多层半导体晶片具有具有第一面和第二面的基板晶片; 沉积在衬底晶片的第一侧上的完全或部分松弛的异质外延层; 以及沉积在基板晶片的第二侧上的应力补偿层。 多层半导体晶片通过包括在基板的第一侧上以沉积温度沉积完全或部分松弛的异质外延层的方法制造; 并且在相同的温度下或在从沉积温度显着冷却晶片之前，在衬底的第二侧上提供应力补偿层。

公开(公告)号：US20050103261A1

公开(公告)日：2005-05-19

申请号：US11020947

申请日：2004-12-23

申请人： Wilfried Von Ammon ,  Ruediger Schmolke ,  Peter Storck ,  Wolfgang Siebert

发明人： Wilfried Von Ammon ,  Ruediger Schmolke ,  Peter Storck ,  Wolfgang Siebert

IPC分类号： C23C16/44 ,  C30B23/02 ,  H01L21/205 ,  H01L21/22 ,  C30B1/00

CPC分类号： C30B23/02 ,  C30B29/40 ,  H01L21/2205 ,  Y10S438/913 ,  Y10S438/928 ,  Y10S438/98 ,  Y10T117/10

摘要： A process for epitaxially coating the front surface of a semiconductor wafer in a CVD reactor, the front surface of the semiconductor wafer being exposed to a process gas which contains a source gas and a carrier gas, and the back surface of the semiconductor wafer being exposed to a displacement gas, wherein the displacement gas contains no more than 5% by volume of hydrogen, with the result that diffusion of dopants out of the back surface of the semiconductor wafer, which is intensified by hydrogen, is substantially avoided. With this process, it is possible to produce a semiconductor wafer with a substrate resistivity of ≦100 mΩcm and a resistivity of the epitaxial layer of >1 Ωcm without back-surface coating, the epitaxial layer of which semiconductor wafer has a resistance inhomogeneity of

摘要翻译： 一种用于在CVD反应器中外延涂覆半导体晶片的前表面的方法，将半导体晶片的前表面暴露于含有源气体和载气的处理气体，并且半导体晶片的背表面暴露 位移气体，其中置换气体含有不超过5体积％的氢，结果是基本上避免了掺杂剂从氢的强化的半导体晶片的背表面扩散出来。 通过该处理，可以制造基板电阻率<= 100mOmegacm的半导体晶片和不具有背面涂覆的>1Ω·macm的外延层的电阻率，其半导体晶片的外延层具有电阻不均匀性 <10％。

公开(公告)号：US06887775B2

公开(公告)日：2005-05-03

申请号：US10387593

申请日：2003-03-13

申请人： Wilfried Von Ammon ,  Ruediger Schmolke ,  Peter Storck ,  Wolfgang Siebert

发明人： Wilfried Von Ammon ,  Ruediger Schmolke ,  Peter Storck ,  Wolfgang Siebert

IPC分类号： C23C16/44 ,  C30B23/02 ,  H01L21/205 ,  H01L21/22

CPC分类号： C30B23/02 ,  C30B29/40 ,  H01L21/2205 ,  Y10S438/913 ,  Y10S438/928 ,  Y10S438/98 ,  Y10T117/10

摘要： A process for epitaxially coating the front surface of a semiconductor wafer in a CVD reactor, the front surface of the semiconductor wafer being exposed to a process gas which contains a source gas and a carrier gas, and the back surface of the semiconductor wafer being exposed to a displacement gas, wherein the displacement gas contains no more than 5% by volume of hydrogen, with the result that diffusion of dopants out of the back surface of the semiconductor wafer, which is intensified by hydrogen, is substantially avoided. With this process, it is possible to produce a semiconductor wafer with a substrate resistivity of ≦100 mΩcm and a resistivity of the epitaxial layer of >1 Ωcm without back-surface coating, the epitaxial layer of which semiconductor wafer has a resistance inhomogeneity of

摘要翻译： 一种用于在CVD反应器中外延涂覆半导体晶片的前表面的方法，将半导体晶片的前表面暴露于含有源气体和载气的处理气体，并且半导体晶片的背表面暴露 位移气体，其中置换气体含有不超过5体积％的氢，结果是基本上避免了掺杂剂从氢的强化的半导体晶片的背表面扩散出来。 通过该处理，可以制造基板电阻率<= 100mOmegacm的半导体晶片和不具有背面涂覆的>1Ω·macm的外延层的电阻率，其半导体晶片的外延层具有电阻不均匀性 <10％。

公开(公告)号：US06630024B2

公开(公告)日：2003-10-07

申请号：US09864994

申请日：2001-05-24

申请人： Rüdiger Schmolke ,  Reinhard Schauer ,  Günther Obermeier ,  Dieter Gräf ,  Peter Storck ,  Klaus Messmann ,  Wolfgang Siebert

发明人： Rüdiger Schmolke ,  Reinhard Schauer ,  Günther Obermeier ,  Dieter Gräf ,  Peter Storck ,  Klaus Messmann ,  Wolfgang Siebert

IPC分类号： C30B2500

CPC分类号： C30B29/06 ,  C30B25/02

摘要： A method for the production of a semiconductor wafer having a front and a back and an epitaxial layer of semiconductor material deposited on the front, includes the following process steps: (a) preparing a substrate wafer having a polished front and a specific thickness; (b) pretreating the front of the substrate wafer in the presence of HCl gas and a silane source at a temperature of from 950 to 1250 degrees Celsius in an epitaxy reactor, the thickness of the substrate wafer remaining substantially unchanged; and (c) depositing the epitaxial layer on the front of the pretreated substrate wafer.

摘要翻译： 一种用于制造半导体晶片的方法，该半导体晶片具有沉积在其前面的半导体材料的前表面和外延层，包括以下工艺步骤：（a）制备具有抛光的正面和特定厚度的衬底晶片; b）在外延反应器中在950〜1250摄氏度的温度下，在HCl气体和硅烷源的存在下预处理基板晶片的正面，基板晶片的厚度基本保持不变; 和（c）在预处理的衬底晶片的前面沉积外延层。

公开(公告)号：US10192739B2

公开(公告)日：2019-01-29

申请号：US14114056

申请日：2012-05-23

申请人： Peter Storck ,  Guenter Sachs ,  Ute Rothammer ,  Sarad Bahadur Thapa ,  Helmut Schwenk ,  Peter Dreier ,  Frank Muemmler ,  Rudolf Mayrhuber

发明人： Peter Storck ,  Guenter Sachs ,  Ute Rothammer ,  Sarad Bahadur Thapa ,  Helmut Schwenk ,  Peter Dreier ,  Frank Muemmler ,  Rudolf Mayrhuber

IPC分类号： C30B25/02 ,  H01L21/02 ,  H01L21/78 ,  H01L29/205

摘要： A layered semiconductor substrate has a monocrystalline first layer based on silicon, having a first thickness and a first lattice constant a1 determined by a first dopant element and a first dopant concentration, and in direct contact therewith, a monocrystalline second layer based on silicon, having a second thickness and a second lattice constant a2, determined by a second dopant element and a second dopant concentration, and a monocrystalline third layer comprising a group III nitride, the second layer located between the first layer and the third layer, wherein a2>a1, wherein the crystal lattice of the first layer and the second layer are lattice-matched, and wherein the bow of the layered semiconductor substrate is in the range from −50 μm to 50 μm.

公开(公告)号：US07723214B2

公开(公告)日：2010-05-25

申请号：US11263192

申请日：2005-10-31

申请人： Peter Storck

发明人： Peter Storck

IPC分类号： H01L21/36

CPC分类号： H01L21/0262 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02494 ,  H01L21/0251 ,  H01L21/02532

摘要： A multilayer structure, comprises a substrate and a layer of silicon and germanium (SiGe layer) deposited heteroepitaxially thereon having the composition Si1-xGex and having a lattice constant which differs from the lattice constant of silicon, and a thin interfacial layer deposited on the SiGe layer and having the composition Si1-yGey, which thin interfacial layer binds threading dislocations, and at least one further layer deposited on the interfacial layer.

摘要翻译： 一种多层结构，包括衬底和其上具有异质外延沉积的硅和锗（SiGe层）层，其具有组成为Si1-xGex并且具有不同于硅的晶格常数的晶格常数，以及沉积在SiGe上的薄界面层 并且具有组合物Si1-yGey，其薄界面层结合穿透位错，以及沉积在界面层上的至少一个另外的层。

公开(公告)号：US20060091502A1

公开(公告)日：2006-05-04

申请号：US11263192

申请日：2005-10-31

申请人： Peter Storck

发明人： Peter Storck

IPC分类号： H01L31/117

CPC分类号： H01L21/0262 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02494 ,  H01L21/0251 ,  H01L21/02532

摘要： A multilayer structure, comprises a substrate and a layer of silicon and germanium (SiGe layer) deposited heteroepitaxially thereon having the composition Si1-xGex and having a lattice constant which differs from the lattice constant of silicon, and a thin interfacial layer deposited on the SiGe layer and having the composition Si1-yGey, which thin interfacial layer binds threading dislocations, and at least one further layer deposited on the interfacial layer.

摘要翻译： 一种多层结构，包括基底以及其异质外延沉积的硅和锗（SiGe层），其具有组成为Si 1-x Ge x x并具有晶格常数， 不同于硅的晶格常数，以及沉积在SiGe层上并且具有Si 1-y Ge y Si的组成的薄界面层，薄的界面层结合穿透位错 ，以及沉积在界面层上的至少一个另外的层。

公开(公告)号：US06995077B2

公开(公告)日：2006-02-07

申请号：US10731034

申请日：2003-12-09

申请人： Wolfgang Siebert ,  Peter Storck

发明人： Wolfgang Siebert ,  Peter Storck

IPC分类号： H01L21/20

CPC分类号： C30B29/06 ,  B82Y15/00 ,  C30B23/02 ,  C30B25/02 ,  C30B33/00 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  Y10S438/974

摘要： A semiconductor wafer with a front surface and a back surface and an epitaxial layer of semiconducting material deposited on the front surface, wherein the surface of the epitaxial layer has a maximum density of 0.14 localized light scatterers per cm2 with a cross section of greater than or equal to 0.12 μm, and the front surface of the semiconductor wafer, prior to the deposition of the epitaxial layer, has a surface roughness of 0.05 to 0.29 nm RMS, measured by AFM on a 1 μm×1 μm reference area. There is also a process for producing a semiconductor wafer with a front surface and a back surface and an epitaxial layer of semiconducting material deposited on the front surface. The process includes the following: (a) a stock removal polishing step as the only polishing step; (b) cleaning and drying of the semiconductor wafer; (c) pretreatment of the front surface of the semiconductor wafer at a temperature of from 950 to 1250 degrees Celsius in an epitaxy reactor; and (d) deposition of the epitaxial layer on the front surface of the pretreated semiconductor wafer.

摘要翻译： 具有前表面和后表面的半导体晶片和沉积在前表面上的半导体材料的外延层，其中外延层的表面具有0.14cm 2的局部光散射体的最大密度， 具有大于或等于0.12μm的横截面，并且在沉积外延层之前半导体晶片的前表面具有0.05μm至0.29nm RMS的表面粗糙度，通过AFM在1mumx1mum上测量 参考区。 还有一种制造半导体晶片的方法，该半导体晶片具有沉积在前表面上的前表面和后表面以及半导体材料的外延层。 该方法包括以下步骤：（a）抛光抛光步骤作为抛光步骤; （b）清洁和干燥半导体晶片; （c）在外延反应器中在950至1250摄氏度的温度下预处理半导体晶片的前表面; 和（d）在预处理的半导体晶片的前表面上沉积外延层。