公开(公告)号：US06767401B2

公开(公告)日：2004-07-27

申请号：US10345217

申请日：2003-01-16

申请人： Richard H. Goodwin, Jr.

发明人： Richard H. Goodwin, Jr.

IPC分类号： C30B2500

CPC分类号： G01N35/028 ,  B01L3/06 ,  B01L3/50853 ,  B01L2300/044 ,  B01L2300/047 ,  B01L2300/0829 ,  C30B7/00 ,  C30B29/58 ,  G01N35/1002 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1016

摘要： A crystal forming apparatus and method for using the apparatus, the apparatus including a plate and a film. The plate has a site adapted to hold a screening solution. The film is adjacent to the plate. The film seals the site and is adapted to contain a precipitant solution inside the site with an air gap between the screening solution and the precipitant solution. In a preferred embodiment, the film is transparent. In another preferred embodiment, the plate comprises a second transparent film supported by a lattice structure and the precipitant solution is sandwiched between the two films.

公开(公告)号：US06224668B1

公开(公告)日：2001-05-01

申请号：US09313858

申请日：1999-05-18

申请人： Masaro Tamatsuka

发明人： Masaro Tamatsuka

IPC分类号： C30B2500

CPC分类号： H01L21/2007 ,  H01L21/76251

摘要： There are disclosed a method for producing an SOI substrate comprising forming an oxide layer on a surface of at least one silicon wafer among two silicon wafers, closely contacting one wafer with the other wafer so that the oxide layer should be interposed between them, subjecting the wafers to a heat treatment to firmly bond the wafers, and making a device processing side wafer thinner to a desired thickness, wherein a silicon single crystal wafer obtained by growing a silicon single crystal ingot doped with nitrogen by the Czochralski method, and slicing the single crystal ingot into a silicon single crystal wafer is used as the device processing side wafer, and an SOI substrate produced by the method. The present invention provides a method for producing SOI substrates, in particular thin film SOI substrates having an SOI layer thickness of 1 &mgr;m or less, exhibiting a small crystal defect size in the SOI layer, and SOI substrates with low cost and high productivity.

摘要翻译： 公开了一种用于制造SOI衬底的方法，包括在两个硅晶片之间的至少一个硅晶片的表面上形成氧化物层，将一个晶片与另一个晶片紧密接触，使得氧化物层应该介于它们之间， 晶片进行热处理以牢固地结合晶片，并且使器件处理侧晶片更薄到期望的厚度，其中通过利用切克劳斯基法（Czochralski method）生长掺杂有氮的硅单晶锭获得的硅单晶晶片，并将单个晶片 将晶体晶锭用作硅单晶晶片用作器件处理侧晶片，以及通过该方法制造的SOI衬底。 本发明提供一种制造SOI衬底的方法，特别是具有SOI层厚度为1μm或更小的在SOI层中呈现小的晶体缺陷尺寸的SOI薄膜SOI基板和低成本和高生产率的SOI衬底。

公开(公告)号：US06780242B2

公开(公告)日：2004-08-24

申请号：US09811674

申请日：2001-03-20

申请人： David J. Norris

发明人： David J. Norris

IPC分类号： C30B2500

CPC分类号： B82Y30/00 ,  C01B19/007 ,  C01G9/00 ,  C01G9/08 ,  C01P2002/54 ,  C01P2002/80 ,  C01P2002/84 ,  C01P2002/86 ,  C01P2004/51 ,  C01P2004/64 ,  C01P2006/60 ,  C30B7/00 ,  C30B29/605

摘要： A method for manufacturing high-quality Mn-doped nanocrystals is provided. The method generally comprises the steps of: (a) combining an organometallic manganese precursor with an organometallic Group II precursor and an organometallic Group VI precursor to provide a precursor mixture; (b) diluting the precursor mixture with a dilution solvent to provide an injection mixture; (c) heating a coordinating solvent; (d) stirring the heated coordinating solvent; and (e) injecting the injection mixture into the heated coordinating solvent while the heated coordinating solvent is being stirred. The invention is particularly useful for manufacturing high-quality, Mn-doped zinc selenide (ZnSe) nanocrystals, high-quality, Mn-doped zinc sulfide (ZnS) nanocrystals, and high-quality, Mn-doped zinc telluride (ZnTe) nanocrystals.

摘要翻译： 提供了制造高品质Mn掺杂纳米晶体的方法。 该方法通常包括以下步骤：（a）将有机金属锰前体与有机金属II族前体和有机金属VI族前体组合以提供前体混合物; （b）用稀释溶剂稀释前体混合物以提供注射混合物; （c）加热配位溶剂; （d）搅拌加热的配位溶剂; 和（e）在加热的配位溶剂被搅拌的同时将注入混合物注入加热的配位溶剂中。 本发明特别适用于制造高质量的Mn掺杂的硒化锌（ZnSe）纳米晶体，高质量的Mn掺杂硫化锌（ZnS）纳米晶体和高品质的Mn掺杂的碲化锌（ZnTe）纳米晶体。

公开(公告)号：US06576054B1

公开(公告)日：2003-06-10

申请号：US09901926

申请日：2001-07-09

申请人： Yuri V. Melnik ,  Vitali Soukhoveev ,  Vladimir Ivantsov ,  Katie Tsvetkov ,  Vladimir A. Dmitriev

发明人： Yuri V. Melnik ,  Vitali Soukhoveev ,  Vladimir Ivantsov ,  Katie Tsvetkov ,  Vladimir A. Dmitriev

IPC分类号： C30B2500

CPC分类号： C30B25/00 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/10 ,  Y10T117/1016

摘要： A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation. In order to achieve high growth rates, preferably a dual growth zone reactor is used in which a first, high temperature zone is used for crystal nucleation and a second, low temperature zone is used for rapid crystal growth. Although the process can be used to grow crystals in which the as-grown material and the seed crystal are of different composition, preferably the two crystalline structures have the same composition, thus yielding improved crystal quality.

摘要翻译： 提供了一种用于生长体GaN和AlGaN单晶晶粒的方法，优选使用改进的HVPE工艺。 单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。 如果需要，可以在生长期间掺杂大块材料以实现n，i-或p型导电性。 为了具有足够的持续时间的生长周期，优选使用延伸的Ga源，其中Ga源的一部分保持在相对高的温度，而大部分Ga源保持在接近于刚刚高于 Ga的熔化温度为了生长AlGaN的大块，优选使用多个Al源，Al源被依次激活以避免Al源耗尽和过度降解。 为了实现高生长速率，优选使用双重生长区反应器，其中第一高温区用于晶体成核，第二低温区用于快速晶体生长。 虽然该方法可以用于生长其中生长材料和晶种具有不同组成的晶体，但优选两个晶体结构具有相同的组成，从而产生改善的晶体质量。

公开(公告)号：US06527855B2

公开(公告)日：2003-03-04

申请号：US09974178

申请日：2001-10-10

申请人： Mark J. DelaRosa ,  Toh-Ming Lu ,  Atul Kumar

发明人： Mark J. DelaRosa ,  Toh-Ming Lu ,  Atul Kumar

IPC分类号： C30B2500

CPC分类号： C23C16/18

摘要： Cobalt thin films were prepared by atomic layer deposition (ALD). The precursor cobalt(II) acetylacetonate [Co(C5H7O2)2] was used to selectively deposit films onto iridium substrates using hydrogen reduction. Cobalt growth was observed on SiO2, silicon, fluorinated silica glass (FSG), and tantalum when silane was used as a reducing agent.

摘要翻译： 通过原子层沉积（ALD）制备钴薄膜。 使用乙酸丙酮前体钴（II）[Co（C 5 H 7 O 2）2]使用氢还原将膜选择性地沉积在铱底物上。 当使用硅烷作为还原剂时，在SiO2，硅，氟化石英玻璃（FSG）和钽上观察到钴生长。

公开(公告)号：US06761767B2

公开(公告)日：2004-07-13

申请号：US10231249

申请日：2002-08-30

申请人： Toyoto Hijiya ,  Takayoshi Torii ,  Kunisuke Izawa

发明人： Toyoto Hijiya ,  Takayoshi Torii ,  Kunisuke Izawa

IPC分类号： C30B2500

CPC分类号： C07D473/00 ,  C07D473/32 ,  C07D473/40

摘要： An N-9-position alkylated form is selectively precipitated by subjecting a mixture containing the N-9-position alkylated form and an N-7-position alkylated form of 2-amino-6-halopurine to a crystallization step using a mixed solvent of an organic solvent and water. Then, this N-9-position alkylated form is reduced to give famciclovir. By this method of the present invention, famciclovir known as an antiviral agent, and an intermediate compound therefor can be efficiently produced.

摘要翻译： 通过使含有N-9位烷基化形式和N-7-位烷基化形式的2-氨基-6-卤代嘌呤的混合物进行结晶步骤，使用以下的混合溶剂将N-9位烷基化形式选择性沉淀： 有机溶剂和水。 然后，将该N-9-位烷基化形式还原，得到泛昔洛韦。 通过本发明的方法，可以有效地制备称为抗病毒剂的泛昔洛韦及其中间体化合物。

公开(公告)号：US06630024B2

公开(公告)日：2003-10-07

申请号：US09864994

申请日：2001-05-24

申请人： Rüdiger Schmolke ,  Reinhard Schauer ,  Günther Obermeier ,  Dieter Gräf ,  Peter Storck ,  Klaus Messmann ,  Wolfgang Siebert

发明人： Rüdiger Schmolke ,  Reinhard Schauer ,  Günther Obermeier ,  Dieter Gräf ,  Peter Storck ,  Klaus Messmann ,  Wolfgang Siebert

IPC分类号： C30B2500

CPC分类号： C30B29/06 ,  C30B25/02

摘要： A method for the production of a semiconductor wafer having a front and a back and an epitaxial layer of semiconductor material deposited on the front, includes the following process steps: (a) preparing a substrate wafer having a polished front and a specific thickness; (b) pretreating the front of the substrate wafer in the presence of HCl gas and a silane source at a temperature of from 950 to 1250 degrees Celsius in an epitaxy reactor, the thickness of the substrate wafer remaining substantially unchanged; and (c) depositing the epitaxial layer on the front of the pretreated substrate wafer.

摘要翻译： 一种用于制造半导体晶片的方法，该半导体晶片具有沉积在其前面的半导体材料的前表面和外延层，包括以下工艺步骤：（a）制备具有抛光的正面和特定厚度的衬底晶片; b）在外延反应器中在950〜1250摄氏度的温度下，在HCl气体和硅烷源的存在下预处理基板晶片的正面，基板晶片的厚度基本保持不变; 和（c）在预处理的衬底晶片的前面沉积外延层。

公开(公告)号：US06613143B1

公开(公告)日：2003-09-02

申请号：US09900833

申请日：2001-07-06

申请人： Yuri V. Melnik ,  Vitali Soukhoveev ,  Vladimir Ivantsov ,  Katie Tsvetkov ,  Vladimir A. Dmitriev

发明人： Yuri V. Melnik ,  Vitali Soukhoveev ,  Vladimir Ivantsov ,  Katie Tsvetkov ,  Vladimir A. Dmitriev

IPC分类号： C30B2500

CPC分类号： C30B25/00 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/10 ,  Y10T117/1016

摘要： A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation. In order to achieve high growth rates, preferably a dual growth zone reactor is used in which a first, high temperature zone is used for crystal nucleation and a second, low temperature zone is used for rapid crystal growth. Although the process can be used to grow crystals in which the as-grown material and the seed crystal are of different composition, preferably the two crystalline structures have the same composition, thus yielding improved crystal quality.

摘要翻译： 提供了一种用于生长体GaN和AlGaN单晶晶粒的方法，优选使用改进的HVPE工艺。 单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。 如果需要，可以在生长期间掺杂大块材料以实现n，i-或p型导电性。 为了具有足够的持续时间的生长周期，优选使用延伸的Ga源，其中Ga源的一部分保持在相对高的温度，而大部分Ga源保持在接近于刚刚高于 Ga的熔化温度为了生长AlGaN的大块，优选使用多个Al源，Al源被依次激活以避免Al源耗尽和过度降解。 为了实现高生长速率，优选使用双重生长区反应器，其中第一高温区用于晶体成核，第二低温区用于快速晶体生长。 虽然该方法可以用于生长其中生长材料和晶种具有不同组成的晶体，但优选两个晶体结构具有相同的组成，从而产生改善的晶体质量。

公开(公告)号：US06478872B1

公开(公告)日：2002-11-12

申请号：US09467313

申请日：1999-12-20

申请人： Yun-sook Chae ,  In-sang Jeon ,  Sang-bom Kang ,  Sang-in Lee ,  Kyu-wan Ryu

发明人： Yun-sook Chae ,  In-sang Jeon ,  Sang-bom Kang ,  Sang-in Lee ,  Kyu-wan Ryu

IPC分类号： C30B2500

CPC分类号： C30B25/14 ,  C23C16/45548 ,  C23C16/45565 ,  C23C16/45574

摘要： A method of delivering two or more mutually-reactive reaction gases when a predetermined film is deposited on a substrate, and a shower head used in the gas delivery method, function to increase the film deposition rate while preventing formation of contaminating particles. In this method, one reaction gas is delivered toward the edge of the substrate, and the other reaction gases are delivered toward the central portion of the substrate, each of the reaction gases being delivered via an independent gas outlet to prevent the reaction gases from being mixed. In the shower head, separate passages are provided to prevent the first reaction gas from mixing with the other reaction gases by delivering the first reaction gas from outlets formed around the edge of the bottom surface of the shower head. The other reaction gases are delivered from outlets formed in the central portion of the bottom surface of the shower head. Accordingly, one of the mutually-reactive gases is delivered toward the central portion of the substrate, and the others are delivered toward the edge of the substrate.

摘要翻译： 当将预定的膜沉积在基底上时输送两个或更多个相互反应的反应气体的方法和用于气体输送方法的淋浴头的作用是提高膜沉积速率同时防止污染颗粒的形成。 在该方法中，一个反应气体被输送到基板的边缘，并且其它反应气体被输送到基板的中心部分，每个反应气体经由独立的气体出口输送，以防止反应气体 混合 在喷淋头中，设置分开的通道，以防止第一反应气体与其它反应气体混合，通过从喷淋头底表面的边缘周围形成的出口输送第一反应气体。 其他反应气体从形成在淋浴喷头的底面的中心部分的出口输送。 因此，相互反应的气体中的一种被输送到基板的中心部分，而其它的被传送到基板的边缘。

公开(公告)号：US06660083B2

公开(公告)日：2003-12-09

申请号：US10113692

申请日：2002-03-28

申请人： Denis V. Tsvetkov ,  Andrey E. Nikolaev ,  Vladimir A. Dmitriev

发明人： Denis V. Tsvetkov ,  Andrey E. Nikolaev ,  Vladimir A. Dmitriev

IPC分类号： C30B2500

CPC分类号： C30B25/16 ,  C23C16/303 ,  C23C16/4488 ,  C23C16/45514 ,  C30B25/02 ,  C30B25/08 ,  C30B25/14 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631

摘要： A method and apparatus for fabricating thin Group III nitride layers as well as Group III nitride layers that exhibit sharp layer-to-layer interfaces are provided. According to one aspect, an HVPE reactor includes one or more gas inlet tubes adjacent to the growth zone, thus allowing fine control of the delivery of reactive gases to the substrate surface. According to another aspect, an HVPE reactor includes both a growth zone and a growth interruption zone. According to another aspect, an HVPE reactor includes a slow growth rate gallium source, thus allowing thin layers to be grown. Using the slow growth rate gallium source in conjunction with a conventional gallium source allows a device structure to be fabricated during a single furnace run that includes both thick layers (i.e., utilizing the conventional gallium source) and thin layers (i.e., utilizing the slow growth rate gallium source).