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71 条记录 (耗时 0.03 秒)

    Method of forming a high K metallic dielectric layer
    11.
    发明授权
    Method of forming a high K metallic dielectric layer 有权
    形成高K金属介电层的方法

    公开(公告)号：US06764914B2

    公开(公告)日：2004-07-20

    申请号：US10290130

    申请日：2002-11-07

    申请人： Alex See ,  Cher Liang Randall Cha ,  Shyue Fong Quek ,  Ting Cheong Ang ,  Wye Boon Loh ,  Sang Yee Loong ,  Jun Song ,  Chua Chee Tee

    发明人： Alex See ,  Cher Liang Randall Cha ,  Shyue Fong Quek ,  Ting Cheong Ang ,  Wye Boon Loh ,  Sang Yee Loong ,  Jun Song ,  Chua Chee Tee

    IPC分类号： H01L2120

    CPC分类号： H01L28/40 ,  H01L21/31683

    摘要： A process for forming a high dielectric constant, (High K), layer, for a metal-oxide-metal, capacitor structure, featuring localized oxidation of an underlying metal layer, performed at a temperature higher than the temperature experienced by surrounding structures, has been developed. A first iteration of this process features the use of a laser ablation procedure, performed to a local region of an underlying metal layer, in an oxidizing ambient. The laser ablation procedure creates the desired, high temperature, only at the laser spot, allowing a high K layer to be created at this temperature, while the surrounding structures on a semiconductor substrate, not directly exposed to the laser ablation procedure remain at lower temperatures. A second iteration features the exposure of specific regions of an underlying metal layer, to a UV, or to an I line exposure procedure, performed in an oxidizing ambient, with the regions of an underlying metal layer exposed to the UV or I line procedure, via clear regions in an overlying photolithographic plate. This procedure also results in the formation of a high K layer, on a top portion of the underlying metal layer.

    摘要翻译： 在高于周围结构所经历的温度的温度下进行的金属氧化物 - 金属电容器结构的高介电常数（高K）层，其特征在于底层金属层的局部氧化， 已经开发 该方法的第一次迭代的特征在于在氧化环境中使用对底层金属层的局部区域进行的激光烧蚀程序。 激光烧蚀过程仅在激光点产生所需的高温，允许在该温度下产生高K层，而不直接暴露于激光烧蚀过程的半导体衬底上的周围结构保持在较低温度 。 第二次迭代的特征在于在氧化环境中进行的底层金属层的特定区域到UV或I线曝光程序，暴露于UV或I线程序的下面的金属层的区域， 通过覆盖光刻板中的透明区域。 该过程还导致在下面的金属层的顶部上形成高K层。

    ESD protection device for SOI technology
    12.
    发明授权
    ESD protection device for SOI technology 有权
    用于SOI技术的ESD保护器件

    公开(公告)号：US06399431B1

    公开(公告)日：2002-06-04

    申请号：US09531786

    申请日：2000-03-21

    申请人： Jun Song ,  Ting Cheong Ang ,  Shyue Fong Quek ,  Sang Yee Loong

    发明人： Jun Song ,  Ting Cheong Ang ,  Shyue Fong Quek ,  Sang Yee Loong

    IPC分类号： H01L2170

    CPC分类号： H01L21/84 ,  H01L27/0266 ,  H01L27/1203 ,  H01L29/78603

    摘要： A method for forming an electrostatic discharge device using silicon-on-insulator technology is described. A silicon-on-insulator substrate is provided comprising a semiconductor substrate underlying an oxide layer underlying a silicon layer. The silicon layer and oxide layer are patterned to form a gate electrode wherein the semiconductor substrate is exposed. Ions are implanted into the exposed semiconductor substrate to form source and drain regions adjacent to the gate electrode. Spacers are formed on sidewalls of the gate electrode. An interlevel dielectric layer is deposited overlying the gate electrode. Openings are formed through the interlevel dielectric layer to the source and drain regions and filled with a conducting layer. The conducting layer is patterned to form conducting lines to complete formation of an electrostatic discharge device using SOI technology in the fabrication of integrated circuits.

    摘要翻译： 描述了使用绝缘体上硅技术形成静电放电装置的方法。 提供了一种绝缘体上硅衬底，其包括位于硅层下面的氧化物层下方的半导体衬底。 图案化硅层和氧化物层以形成其中暴露半导体衬底的栅电极。 将离子注入到暴露的半导体衬底中以形成与栅电极相邻的源区和漏区。 隔板形成在栅电极的侧壁上。 沉积在栅电极上的层间电介质层。 开口通过层间介电层形成到源区和漏区，并填充有导电层。 图案化导电层以形成导线，以在集成电路的制造中使用SOI技术完成静电放电装置的形成。

    ESD protection device for STI deep submicron technology
    14.
    发明授权
    ESD protection device for STI deep submicron technology 有权
    用于STI深亚微米技术的ESD保护器件

    公开(公告)号：US06177324B1

    公开(公告)日：2001-01-23

    申请号：US09428568

    申请日：1999-10-28

    申请人： Jun Song ,  Shyue Fong Quek ,  Ting Cheong Ang ,  Lap Chan

    发明人： Jun Song ,  Shyue Fong Quek ,  Ting Cheong Ang ,  Lap Chan

    IPC分类号： H01L21336

    CPC分类号： H01L29/66621 ,  H01L27/0266 ,  H01L29/0649 ,  H01L29/7834

    摘要： A new method is provided for the creation of an ESD protection device for deep submicron semiconductor technology. An STI trench is created and filled with oxide. The surface of the STI region is polished after which a gate structure is created over the STI region. A high energy ESD implant is performed that is self-aligned with the created gate structure after which the EDS device structure is completed by implanting the source and drain regions of the ESD device.

    摘要翻译： 提供了一种用于创建深亚微米半导体技术的ESD保护器件的新方法。 产生STI沟槽并填充氧化物。 抛光STI区域的表面，之后在STI区域上形成栅极结构。 执行高能量ESD注入，其与所产生的栅极结构自对准，之后通过注入ESD器件的源极和漏极区域来完成EDS器件结构。

    Process to fabricate a novel source-drain extension
    15.
    发明授权
    Process to fabricate a novel source-drain extension 有权
    制造新颖的源极 - 漏极扩展的过程

    公开(公告)号：US06319783B1

    公开(公告)日：2001-11-20

    申请号：US09443425

    申请日：1999-11-19

    申请人： Ting Cheong Ang ,  Shyue Pong Quek ,  Jun Song ,  Xing Yu

    发明人： Ting Cheong Ang ,  Shyue Pong Quek ,  Jun Song ,  Xing Yu

    IPC分类号： H01L21336

    CPC分类号： H01L29/6653 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/7834

    摘要： A process for fabricating a MOSFET device, featuring source/drain extension regions, formed after the utilization of high temperature processes, such as heavily doped source/drain regions, has been developed. Disposable insulator spacers are formed on the sides of doped, SEG silicon regions, followed formation of a gate insulator layer, and an overlying gate structure, on a region of the semiconductor substrate located between the doped SEG silicon regions. The temperature experienced during these process steps result in the formation of the heavily doped source/drain, underlying the SEG silicon regions. Selective removal of the disposable spacers, allows the source/drain extension regions to be placed in the space vacated by the disposable spacers, adjacent to the heavily doped source/drain region. Insulator spacers are then used to fill the spaces vacated by removal of the disposable spacers, directly overlying the source/drain extension regions. Additional iterations include the use of an L shaped spacer, overlying the source/drain extension region, as well as the formation of metal silicide, on the doped SEG silicon regions, and on the gate structures.

    摘要翻译： 已经开发了一种用于制造MOSFET器件的方法，其特征在于在利用高温工艺（例如重掺杂源极/漏极区域）之后形成的源极/漏极延伸区域。 在掺杂的SEG硅区域的侧面上形成一次性绝缘体间隔物，随后在位于掺杂的SEG硅区域之间的半导体衬底的区域上形成栅极绝缘体层和覆盖栅极结构。 在这些工艺步骤中经历的温度导致SEG硅区域下方的重掺杂源极/漏极的形成。 选择性地去除一次性间隔件允许源极/漏极延伸区域被放置在与重掺杂的源极/漏极区域相邻的由一次性间隔物空出的空间中。 然后使用绝缘体间隔物来填充通过去除一次性间隔件而空出的空间，直接覆盖源极/漏极延伸区域。 另外的迭代包括在掺杂的SEG硅区域上以及栅极结构上使用覆盖源极/漏极延伸区域的L形间隔物以及金属硅化物的形成。

    Method of forming of high K metallic dielectric layer
    16.
    发明授权
    Method of forming of high K metallic dielectric layer 失效
    形成高K金属介电层的方法

    公开(公告)号：US06492242B1

    公开(公告)日：2002-12-10

    申请号：US09609447

    申请日：2000-07-03

    申请人： Alex See ,  Cher Liang Randall Cha ,  Shyuz Fong Quek ,  Ting Cheong Ang ,  Wye Boon Loh ,  Sang Yee Loong ,  Jun Song ,  Chua Chee Tee

    发明人： Alex See ,  Cher Liang Randall Cha ,  Shyuz Fong Quek ,  Ting Cheong Ang ,  Wye Boon Loh ,  Sang Yee Loong ,  Jun Song ,  Chua Chee Tee

    IPC分类号： H01L2120

    CPC分类号： H01L28/40 ,  H01L21/31683

    摘要： A process for forming a high dielectric constant, (High K), layer, for a metal-oxide-metal, capacitor structure, featuring localized oxidation of an underlying metal layer, performed at a temperature higher than the temperature experienced by surrounding structures, has been developed. A first iteration of this process features the use of a laser ablation procedure, performed to a local region of an underlying metal layer, in an oxidizing ambient. The laser ablation procedure creates the desired, high temperature, only at the laser spot, allowing a high K layer to be created at this temperature, while the surrounding structures on a semiconductor substrate, not directly exposed to the laser ablation procedure remain at lower temperatures. A second iteration features the exposure of specific regions of an underlying metal layer, to a UV, or to an I line exposure procedure, performed in an oxidizing ambient, with the regions of an underlying metal layer exposed to the UV or I line procedure, via clear regions in an overlying photolithographic plate. This procedure also results in the formation of a high K layer, on a top portion of the underlying metal layer.

    摘要翻译： 在高于周围结构所经历的温度的温度下进行的金属氧化物 - 金属电容器结构的高介电常数（高K）层，其特征在于底层金属层的局部氧化， 已经开发 该方法的第一次迭代的特征在于在氧化环境中使用对底层金属层的局部区域进行的激光烧蚀程序。 激光烧蚀过程仅在激光点产生所需的高温，允许在该温度下产生高K层，而不直接暴露于激光烧蚀过程的半导体衬底上的周围结构保持在较低温度 。 第二次迭代的特征在于在氧化环境中进行的底层金属层的特定区域到UV或I线曝光程序，暴露于UV或I线程序的下面的金属层的区域， 通过覆盖光刻板中的透明区域。 该过程还导致在下面的金属层的顶部上形成高K层。

    Home gateway policy controlling device, system and implementing method thereof
    18.
    发明授权
    Home gateway policy controlling device, system and implementing method thereof 有权
    家庭网关策略控制设备，系统及其实现方法

    公开(公告)号：US08788646B2

    公开(公告)日：2014-07-22

    申请号：US13054181

    申请日：2008-12-18

    申请人： Jun Song ,  Mo Sun

    发明人： Jun Song ,  Mo Sun

    IPC分类号： G06F15/173 ,  H04L12/28 ,  H04L12/56 ,  H04L12/24

    CPC分类号： H04L12/2834 ,  H04L41/5003 ,  H04L47/10

    摘要： An apparatus for implementing policy control for home gateway comprises a Co-located Policy Decision Function Entity (PD-FE) for receiving the QoS policy issued by the PD-FE at network side and sending the QoS policy to the home gateway or issuing the QoS policy configured thereon to the home gateway. A method for implementing the policy control for home gateway, the method comprises: the Co-located PD-FE receiving the QoS policy issued by the PD-FE at network side or being configured with the QoS policy; and the Co-located PD-FE issuing the QoS policy to home gateways. With the present invention, the Resource and Admission Control Function (RACF) avoids controlling the home gateway directly or sending the policy to the home gateways in the case that there are a lot of home gateways and all the home gateways are scattered at the edge of the network.

    摘要翻译： 用于实现家庭网关策略控制的装置包括一个共同定位的策略决策功能实体（PD-FE），用于接收由网络侧的PD-FE发出的QoS策略，并将QoS策略发送到家庭网关或发出QoS 策略配置在家庭网关上。 一种实现家庭网关策略控制的方法，该方法包括：同时配置PD-FE接收由网络侧PD-FE发布的QoS策略，或配置QoS策略; 以及向家庭网关发布QoS策略的共同配置的PD-FE。 在本发明中，资源和接纳控制功能（RACF）避免了直接控制家庭网关或者在家庭网关有很多家庭网关的情况下向家庭网关发送策略，并且所有家庭网关都在 网络。

    Method for resource and admission control
    19.
    发明授权
    Method for resource and admission control 有权
    资源和准入控制方法

    公开(公告)号：US08472317B2

    公开(公告)日：2013-06-25

    申请号：US12999345

    申请日：2009-10-20

    申请人： Jianjie You ,  Mo Sun ,  Jun Song

    发明人： Jianjie You ,  Mo Sun ,  Jun Song

    IPC分类号： H04L1/00 ,  H04L12/26

    CPC分类号： H04W12/08 ,  H04L65/1043 ,  H04L65/80 ,  H04W28/24

    摘要： The present invention provides a method for resource and admission control. In the process of resource requesting: upon receiving a resource initialization request, which is used for requesting a QoS resource for a service, sent by an SCF, a PD-FE of a visited network performing an authorization check and a resource availability check for the resource initialization request, and sending the resource initialization request to a PD-FE of a home network; the PD-FE of the home network performing an authorization check and making an initial policy decision for the resource initialization request, and sending a resource initialization response containing the generated initial policy decision to the PD-FE of the visited network; and the PD-FE of the visited network making a final admission decision for the resource initialization request according to the initial decision policy and the result of the resource availability check. The method provided by the present invention specifies respective functional attributes of the PACF in the home network and of the PACF in the visited network and the interaction process between the two, and solves the problem of resource and admission control supporting roaming.

    摘要翻译： 本发明提供了一种用于资源和准入控制的方法。 在资源请求的过程中：在接收到由SCF发送的用于请求服务的QoS资源的资源初始化请求时，访问网络的PD-FE执行授权检查和资源可用性检查 资源初始化请求，并将资源初始化请求发送到家庭网络的PD-FE; 家庭网络的PD-FE执行授权检查并对资源初始化请求进行初始策略决定，并将包含所生成的初始策略决定的资源初始化响应发送到被访问网络的PD-FE; 访问网络的PD-FE根据初始决策策略和资源可用性检查的结果对资源初始化请求进行最终准入决定。 本发明提供的方法在归属网络和受访网络中的PACF以及两者之间的交互过程中规定了PACF的功能属性，解决了支持漫游的资源和准入控制问题。

    METHOD AND SYSTEM FOR CONTROLLING HOME GATEWAY POLICY
    20.
    发明申请
    METHOD AND SYSTEM FOR CONTROLLING HOME GATEWAY POLICY 审中-公开
    控制家庭网关策略的方法与系统

    公开(公告)号：US20100309926A1

    公开(公告)日：2010-12-09

    申请号：US12864223

    申请日：2008-05-23

    申请人： Mo Sun ,  Jun Song

    发明人： Mo Sun ,  Jun Song

    IPC分类号： H04L12/56

    CPC分类号： H04L41/0893 ,  H04L12/4641 ,  H04L12/66 ,  H04L41/5003 ,  H04L45/24 ,  H04L47/20 ,  H04L47/24 ,  H04L47/70 ,  H04L47/782 ,  H04L47/805 ,  H04W28/08 ,  H04W72/00 ,  H04W88/16

    摘要： A method and system for controlling home gateway policy are disclosed. The method comprises: a Resource and Admission Control Function (RACF) entity sends down a policy to a home gateway, and the home gateway performs a policy execution for an uplink packet passing through the home gateway according to the policy received. With the policy control method and system of the present invention, the policy is sent down to the home gateway through the RACF, Quality of Service (QoS) control is made for the uplink packet passing through the home gateway before Bandwidth Remote Access Server (BRAS), effective QoS assurance is provided for the uplink packets before arriving at the BRAS, and meanwhile, the problem of heavy load of a convergence layer of a metropolitan area network in the prior art is solved.

    摘要翻译： 公开了一种用于控制家庭网关策略的方法和系统。 该方法包括：资源和接纳控制功能（RACF）实体向家庭网关发送策略，家庭网关根据收到的策略对通过家庭网关的上行链路分组进行策略执行。 利用本发明的策略控制方法和系统，该策略通过RACF向家庭网关发送，对带宽远程访问服务器（BRAS）之前通过家庭网关的上行数据包进行服务质量（QoS）控制 ），在到达BRAS之前为上行链路分组提供了有效的QoS保证，同时解决了现有技术中城域网融合层重负载问题。