公开(公告)号：US08044425B2

公开(公告)日：2011-10-25

申请号：US11191111

申请日：2005-07-27

申请人： Mark Raffetto ,  Jayesh Bharathan ,  Kevin Haberern ,  Michael Bergmann ,  David Emerson ,  James Ibbetson ,  Ting Li

发明人： Mark Raffetto ,  Jayesh Bharathan ,  Kevin Haberern ,  Michael Bergmann ,  David Emerson ,  James Ibbetson ,  Ting Li

IPC分类号： H01L29/22

摘要： A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 Å and a specific contact resistivity less than about 10−3 ohm-cm2.

公开(公告)号：US07915629B2

公开(公告)日：2011-03-29

申请号：US12316097

申请日：2008-12-08

申请人： Ting Li ,  Monica Hansen ,  James Ibbetson

发明人： Ting Li ,  Monica Hansen ,  James Ibbetson

IPC分类号： H01L33/00

CPC分类号： H01L33/10 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises an LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. The composite layer comprises a first layer, and alternating plurality of second and third layers on the first layer, and a reflective layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED.

摘要翻译： 一种具有与所述LED集成的复合高反射层的高效率发光二极管，以提高发射效率。 发光二极管（LED）芯片的一个实施例包括LED和与LED成一体的复合高反射层，以反射从有源区发射的光。 所述复合层包括第一层和在第一层上交替的多个第二和第三层，以及在所述多个第二层和第三层的最上层的反射层。 第二层和第三层具有不同的折射率，并且第一层比第二层和第三层中最厚的层厚至少三倍。 对于LED芯片内部的复合层，可以通过复合层包括导电通孔，以允许电信号通过复合层到达LED。

公开(公告)号：US07534633B2

公开(公告)日：2009-05-19

申请号：US11083460

申请日：2005-03-17

申请人： Max Batres ,  James Ibbetson ,  Ting Li

发明人： Max Batres ,  James Ibbetson ,  Ting Li

IPC分类号： H01L21/00

CPC分类号： H01L33/22 ,  H01L33/0095 ,  H01L2224/13 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2224/0401

摘要： The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. Etched features, such as truncated pyramids, may be formed on the emitting surface, prior to the RIE process, by cutting into the surface using a saw blade or a masked etching technique. Sidewall cuts may also be made in the emitting surface prior to the RIE process. A light absorbing damaged layer of material associated with saw cutting is removed by the RIE process. The surface morphology created by the RIE process may be emulated using different, various combinations of non-RIE processes such as grit sanding and deposition of a roughened layer of material or particles followed by dry etching.

摘要翻译： 通过对发光表面施加反应离子蚀刻（RIE）工艺来改变LED发光表面的表面形态。 在RIE工艺之前，通过使用锯片或掩模蚀刻技术切割到表面中，可以在发射表面上形成蚀刻特征，例如截顶棱锥。 也可以在RIE工艺之前在发射表面制造侧壁切口。 通过RIE工艺去除与锯切相关的光吸收损伤的材料层。 RIE工艺产生的表面形态可以使用非RIE工艺的各种各样的组合来进行仿真，例如砂光砂磨和粗糙化的材料层或颗粒的沉积，随后进行干蚀刻。

公开(公告)号：US20060001046A1

公开(公告)日：2006-01-05

申请号：US11083460

申请日：2005-03-17

申请人： Max Batres ,  James Ibbetson ,  Ting Li ,  Adam Saxler

发明人： Max Batres ,  James Ibbetson ,  Ting Li ,  Adam Saxler

IPC分类号： H01L27/10

CPC分类号： H01L33/22 ,  H01L33/0095 ,  H01L2224/13 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2224/0401

摘要： The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. Etched features, such as truncated pyramids, may be formed on the emitting surface, prior to the RIE process, by cutting into the surface using a saw blade or a masked etching technique. Sidewall cuts may also be made in the emitting surface prior to the RIE process. A light absorbing damaged layer of material associated with saw cutting is removed by the RIE process. The surface morphology created by the RIE process may be emulated using different, various combinations of non-RIE processes such as grit sanding and deposition of a roughened layer of material or particles followed by dry etching.

公开(公告)号：US08686460B2

公开(公告)日：2014-04-01

申请号：US13271865

申请日：2011-10-12

申请人： Mark Raffetto ,  Jayesh Bharathan ,  Kevin Haberern ,  Michael Bergmann ,  David Emerson ,  James Ibbetson ,  Ting Li

发明人： Mark Raffetto ,  Jayesh Bharathan ,  Kevin Haberern ,  Michael Bergmann ,  David Emerson ,  James Ibbetson ,  Ting Li

IPC分类号： H01L29/22

摘要： A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 Å. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.

公开(公告)号：US08598609B2

公开(公告)日：2013-12-03

申请号：US13071349

申请日：2011-03-24

申请人： James Ibbetson ,  Ting Li ,  Monica Hansen

发明人： James Ibbetson ,  Ting Li ,  Monica Hansen

IPC分类号： H01L33/00

CPC分类号： H01L33/10 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises an LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. The composite layer comprises a first layer, and alternating plurality of second and third layers on the first layer, and a reflective layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED.

摘要翻译： 一种具有与所述LED集成的复合高反射层的高效率发光二极管，以提高发射效率。 发光二极管（LED）芯片的一个实施例包括LED和与LED成一体的复合高反射层，以反射从有源区发射的光。 所述复合层包括第一层和在第一层上交替的多个第二和第三层，以及在所述多个第二层和第三层的最上层的反射层。 第二层和第三层具有不同的折射率，并且第一层比第二层和第三层中最厚的层厚至少三倍。 对于LED芯片内部的复合层，可以通过复合层包括导电通孔，以允许电信号通过复合层到达LED。

公开(公告)号：US20110169036A1

公开(公告)日：2011-07-14

申请号：US13071349

申请日：2011-03-24

申请人： JAMES IBBETSON ,  Ting Li ,  Monica Hansen

发明人： JAMES IBBETSON ,  Ting Li ,  Monica Hansen

IPC分类号： H01L33/60

CPC分类号： H01L33/10 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises an LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. The composite layer comprises a first layer, and alternating plurality of second and third layers on the first layer, and a reflective layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED.

摘要翻译： 一种具有与所述LED集成的复合高反射层的高效率发光二极管，以提高发射效率。 发光二极管（LED）芯片的一个实施例包括LED和与LED成一体的复合高反射层，以反射从有源区发射的光。 所述复合层包括第一层和在第一层上交替的多个第二和第三层，以及在所述多个第二层和第三层的最上层的反射层。 第二层和第三层具有不同的折射率，并且第一层比第二层和第三层中最厚的层厚至少三倍。 对于LED芯片内部的复合层，可以通过复合层包括导电通孔，以允许电信号通过复合层到达LED。

公开(公告)号：US20110049546A1

公开(公告)日：2011-03-03

申请号：US12553025

申请日：2009-09-02

申请人： STEN HEIKMAN ,  Matthew Jacob-Mitos ,  Ting Li ,  James Ibbetson

发明人： STEN HEIKMAN ,  Matthew Jacob-Mitos ,  Ting Li ,  James Ibbetson

IPC分类号： H01L33/00 ,  G02B5/08 ,  B05D5/06

CPC分类号： H01L33/46 ,  H01L33/00 ,  H01L33/0062 ,  H01L33/387 ,  H01L33/405 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A composite high reflectivity mirror (CHRM) with at least one relatively smooth interior surface interface. The CHRM includes a composite portion, for example dielectric and metal layers, on a base element. At least one of the internal surfaces is polished to achieve a smooth interface. The polish can be performed on the surface of the base element, on various layers of the composite portion, or both. The resulting smooth interface(s) reflect more of the incident light in an intended direction. The CHRMs may be integrated into light emitting diode (LED) devices to increase optical output efficiency.

摘要翻译： 具有至少一个相对平滑的内表面界面的复合高反射镜（CHRM）。 CHRM在基底元件上包括复合部分，例如电介质和金属层。 至少一个内表面被抛光以实现平滑的界面。 抛光剂可以在基体表面上，复合部分的各个层上，或两者上进行。 所得到的平滑界面反射更多的入射光在预期的方向。 CHRM可以集成到发光二极管（LED）装置中以增加光输出效率。

公开(公告)号：US20100273280A1

公开(公告)日：2010-10-28

申请号：US12821069

申请日：2010-06-22

申请人： Max Batres ,  James Ibbetson ,  Ting Li ,  Adam W. Saxler

发明人： Max Batres ,  James Ibbetson ,  Ting Li ,  Adam W. Saxler

IPC分类号： H01L33/44

CPC分类号： H01L33/22 ,  H01L33/0095 ,  H01L2224/13 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2224/0401

摘要： The surface morphology of an LED light emitting surface is changed by applying processes, such as a reactive ion etch (RIE) process to the light emitting surface. In one embodiment, the changed surface morphology takes the form of a moth-eye surface. The surface morphology created by the RIE process may be emulated using different combinations of non-RIE processes such as grit sanding and deposition of a roughened layer of material or particles followed by dry etching.

摘要翻译： 通过将诸如反应离子蚀刻（RIE）工艺的工艺应用到发光表面来改变LED发光表面的表面形态。 在一个实施方案中，改变的表面形态采取飞蛾眼表面的形式。 可以使用RIE工艺的非RIE工艺的不同组合来模拟由RIE工艺制成的表面形态，例如砂光磨削和粗糙化的材料层或颗粒的沉积，然后进行干蚀刻。

公开(公告)号：US20100140635A1

公开(公告)日：2010-06-10

申请号：US12316097

申请日：2008-12-08

申请人： James Ibbetson ,  Ting Li ,  Monica Hansen

发明人： James Ibbetson ,  Ting Li ,  Monica Hansen

IPC分类号： H01L33/00 ,  H01L21/50

CPC分类号： H01L33/10 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises an LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. The composite layer comprises a first layer, and alternating plurality of second and third layers on the first layer, and a reflective layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED.

摘要翻译： 一种具有与所述LED集成的复合高反射层的高效率发光二极管，以提高发射效率。 发光二极管（LED）芯片的一个实施例包括LED和与LED成一体的复合高反射层，以反射从有源区发射的光。 所述复合层包括第一层和在第一层上交替的多个第二和第三层，以及在所述多个第二层和第三层的最上层的反射层。 第二层和第三层具有不同的折射率，并且第一层比第二层和第三层中最厚的层厚至少三倍。 对于LED芯片内部的复合层，可以通过复合层包括导电通孔，以允许电信号通过复合层到达LED。