摘要:
To maintain image quality when a field frequency is dynamically changed. In an image display area AA, control lines 4a are arranged respectively corresponding to scanning lines 3a, and TFTs 50 and 51, a pixel electrode 9a, and a storage capacitor 52 are arranged at each intersection of one of data lines 6a and scanning lines 3a. A control signal SC supplied through the control line 4a controls the TFT 51 for an on and off operation. A timing signal generator circuit 300 activates the control signal SC when a field frequency is not higher than 60 Hz, and deactivates the control signal SC when a field frequency is above 60 Hz. In this way, whether or not to connect the storage capacitor 52 to the pixel electrode 9a is determined.
摘要:
A drive circuit for an electro-optical device, which has a plurality of pairs of shift registers for latching and holding signals representing bits of image data, a D/A converter for performing D/A-conversion on image data latched by the shift register n-bits by n-bits, for generating voltages corresponding to 2N gray scales and for supplying the generated voltages to signal lines, and a switch group for selectively supplying image data latched by one of the shift registers of each of the pairs to the D/A converter. This drive circuit is adapted to repeatedly perform an operation of supplying the D/A converter with image data held by one of the shift registers of each of the pairs during image data is latched by the other shift register. Thus, image data can be inputted thereto at a high speed.
摘要:
A sensing circuit having a first substrate, a second substrate, a layer of dielectric material, a first electrode, a second electrode and an electrostatic capacitance detection unit is provided. The second substrate faces the first substrate. The dielectric material is held between the first substrate and the second substrate. The first electrode and the second electrode are arranged between the dielectric material and the first substrate. The electrostatic capacitance detection unit is configured to produce a detection signal having an amplitude according to a value of capacitance formed between the first electrode and the second electrode through the dielectric material.
摘要:
An electro-optical device includes a pixel circuit, and a driving circuit. The pixel circuit includes a driving transistor, an electro-optical element, a first capacitive element, a first switch, and a second switch. The driving circuit varies a potential at a control terminal during a first period, sets the potential at the control terminal to a compensation initial value during a second period, varies a driving potential from a first potential to a second potential such that the driving transistor is turned on during a third period, supplies a grayscale potential corresponding to a designated grayscale to the signal line and controls the second switch to be turned on during a fourth period, and varies a voltage between the control terminal and a first terminal with the passage of time during a fifth period.
摘要:
An electronic apparatus includes an electronic circuit including a driving transistor, an additional capacitive element and a first switch for controlling a connection between a circuit point and a control terminal and a driving circuit which controls the first switch to an off state and changes the potential of the control terminal such that the driving transistor transitions to an on state in a first period, controls the first switch to the on state so as to set the potential of the control terminal to an initial compensation value, in a second period, and controls the first switch to the on state and changes the driving potential from the first potential to the second potential such that the driving transistor transitions to the on state, in a third period.
摘要:
The invention provides an electro-optical apparatus that can prevent a shift in a threshold voltage of an amorphous silicon transistor while driving an organic EL device in a pixel circuit including the amorphous silicon transistor. A characteristic-adjustment circuit can be provided, which has a function of returning a shift in the threshold voltage of the amorphous silicon transistor included in the pixel circuit to the original state.
摘要:
To reduce the time for writing a voltage onto a gate of a driving transistor. In an initialization period, a node B is fixed to an initial voltage VINI, transistors are turned on, and a current flows into an OLED element, such that a voltage according to the current is held at the node A. Thereafter, the transistors are sequentially turned off, such that a threshold voltage of a driving transistor is held at the node A. In a writing period, a transistor is turned on and a data signal X-j is supplied, such that a voltage of the node B varies by the amount according to the current flowing into the OLED element. The voltage of the node A varies from the threshold voltage by the amount which is obtained by dividing the voltage variation by a capacitance ratio. In a light-emitting period, the transistor is turned on, such that a current according to the voltage of the node A flows into the OLED element.
摘要:
An electro-optical device includes a plurality of pixel circuits that are disposed to correspond to intersections of a plurality of scanning lines and a plurality of data lines, a scanning line driving circuit that sequentially selects the plurality of scanning lines to apply a selection voltage to the selected scanning line, a data line driving circuit that applies any one of an on voltage and an off voltage to the plurality of data lines in accordance with gray-scale levels of pixel circuits corresponding to intersections of the data lines and the selected scanning line by the scanning line driving circuit, and a signal supply circuit that supplies a driving signal, of which the level periodically changes, to a signal supply line. Each of the pixel circuits has a first transistor in which, when the on voltage is applied to a gate electrode, a first terminal is connected to a second terminal, an electro-optical element that is connected to the first terminal of the first transistor, a first capacitor one end of which is connected to the second terminal of the first transistor and simultaneously the other end of which is connected to the signal supply line, a second capacitor one end of which is connected to the gate electrode of the first transistor, and a second transistor in which, when the selection voltage is applied to a gate electrode connected to a corresponding scanning line, a first terminal connected to a corresponding data line is connected to a second terminal connected to one end of the second capacitor.
摘要:
The present invention provides a systems and methods to perform an electrical test on a substrate assembly used as a TFT array substrate of a liquid-crystal device without detaching a mounted external IC. The substrate assembly can include a substrate, a peripheral circuit embedded in the substrate, a first wiring arranged on the substrate, and an external IC, mounted on the substrate, and having a first terminal connected to an interconnection portion arranged on the first wiring. The substrate assembly can further include a second wiring which extends from the interconnection portion in such a manner that the second wiring is routed in a portion of the substrate facing the integrated circuit, and a first external circuit connection terminal arranged on the second wiring in a portion of the substrate not facing the integrated circuit. The external IC is thus tested through the external circuit connection terminal.
摘要:
The invention provides an electro-optical device having circuits for driving electro-optical elements, such as organic EL elements, and a driving device, which can employ driving elements having low driving ability, such as α-TFTs. By providing a charge storage capacitor between the source electrode and the gate electrode of a driving transistor which is between power sources, the electro-optical device can allow the driving transistor to control a driving current, even when an electro-optical element is connected to the source side of the driving transistor. In addition, driving data can be stored in the charge storage capacitor by applying a predetermined voltage to the source electrode of the driving transistor.