公开(公告)号：US20220081771A1

公开(公告)日：2022-03-17

申请号：US17472891

申请日：2021-09-13

Applicant: Tokyo Electron Limited

Inventor： Hiroki IRIUDA ,  Yoichiro CHIBA ,  Atsushi ENDO

IPC: C23C16/455 ,  C23C16/52

Abstract: A processing apparatus includes: a processing container having a substantially cylindrical shape and provided with an exhaust slit on a side wall; and a plurality of gas nozzles extending in a vertical direction along an inside of the side wall of the processing container, disposed symmetrically with respect to a straight line connecting a center of the processing container and a center of the exhaust slit, and each configured to eject a same processing gas into the processing container.

公开(公告)号：US20220010424A1

公开(公告)日：2022-01-13

申请号：US17291930

申请日：2019-10-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke SUZUKI ,  Tsuyoshi MORIYA ,  Kazuhide HASEBE ,  Atsushi ENDO ,  Satoshi TANAKA

IPC: C23C16/04 ,  C23C16/455 ,  H01L21/308 ,  H01L21/66

Abstract: A film forming method is provided. In the film forming method, a mask is prepared based on a measurement result of a surface state of a substrate. The mask is transferred into a process chamber and the substrate is transferred into the process chamber. Then, a film is formed on a back surface of the substrate while the mask is disposed onto the back surface of the substrate.

公开(公告)号：US20200161130A1

公开(公告)日：2020-05-21

申请号：US16685627

申请日：2019-11-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yutaka MOTOYAMA ,  Atsushi ENDO

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/67 ,  C23C16/52 ,  C23C16/24 ,  C23C16/06

Abstract: There is provided a method of forming a polysilicon film, which includes: forming an amorphous silicon film on a substrate; forming a cap layer, which is formed of an amorphous germanium film or an amorphous silicon germanium film, on the amorphous silicon film; forming crystal nuclei of a silicon in the amorphous silicon film by heating the substrate at a first temperature; removing the cap layer after the crystal nuclei are formed; and growing the crystal nuclei by heating the substrate from which the cap layer is removed, at a second temperature equal to or higher than the first temperature.

公开(公告)号：US20140308820A1

公开(公告)日：2014-10-16

申请号：US14315604

申请日：2014-06-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Atsushi ENDO ,  Masaki KUROKAWA ,  Hiroki IRIUDA

IPC: H01L21/02 ,  H01L23/00

CPC classification number: H01L21/02164 ,  C23C16/345 ,  C23C16/402 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/67309 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of depositing a silicon oxide film and a silicon nitride film includes depositing the silicon oxide film and the silicon nitride film on a substrate, and a gas for forming the silicon nitride film further includes boron.

Abstract translation: 沉积氧化硅膜和氮化硅膜的方法包括在衬底上沉积氧化硅膜和氮化硅膜，并且用于形成氮化硅膜的气体还包括硼。

公开(公告)号：US20130109195A1

公开(公告)日：2013-05-02

申请号：US13661107

申请日：2012-10-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Atsushi ENDO ,  Satoshi MIZUNAGA ,  Takehiro OTSUKA

IPC: C23C16/46 ,  H01L21/31

CPC classification number: C23C16/4405 ,  C23C16/4404

Abstract: Provided is a method of operating a film forming apparatus capable of suppressing generation of particles by improving an adhesion of a carbon film to surfaces of members which are formed of a quartz material and contact a processing space in a processing container. The method includes forming a carbon film on each of surfaces of a plurality of objects held by a holding unit in a processing container formed of a quartz material, wherein the method further includes forming an adhesion film to improve the adhesion of the carbon film, on surfaces of members which are formed of a quartz material and contact a processing space in the processing container. Accordingly, the adhesion of the carbon film to the surface of the member formed of a quartz material contacting the processing space in the processing container is improved, thereby suppressing generation of particles.

Abstract translation: 提供了一种操作成膜装置的方法，该成膜装置能够通过改善碳膜与由石英材料形成并与处理容器中的处理空间接触的部件的表面的粘合力来抑制颗粒的产生。 该方法包括在由石英材料形成的处理容器中的由保持单元保持的多个物体的每个表面上形成碳膜，其中所述方法还包括形成粘合膜以改善所述碳膜的粘附性， 由石英材料形成并与处理容器中的处理空间接触的构件的表面。 因此，提高了碳膜对与处理容器内的处理空间接触的石英材料形成的部件的表面的粘附性，抑制了颗粒的产生。