公开(公告)号：US20220013402A1

公开(公告)日：2022-01-13

申请号：US17363401

申请日：2021-06-30

Applicant: Tokyo Electron Limited

Inventor： Melvin VERBAAS ,  Einosuke TSUDA ,  Kentaro ASAKURA

IPC: H01L21/687 ,  H05B3/22

Abstract: A stage device includes: a stage having a pin hole provided therein and a placement surface on which a substrate is placed; and at least one lift pin configured to move up and down through the pin hole; and a lifter configured to raise and lower the at least one lift pin, wherein the stage includes a first heating part provided therein and configured to heat the stage, and the at least one lift pin includes a second heating part provided therein or therearound and configured to heat the at least one lift pin.

公开(公告)号：US20150322571A1

公开(公告)日：2015-11-12

申请号：US14705508

申请日：2015-05-06

Applicant: Tokyo Electron Limited

Inventor： Hideaki YAMASAKI ,  Takashi KAKEGAWA ,  Einosuke TSUDA ,  Tomohiro OOTA

IPC: C23C16/50 ,  C23C16/455 ,  C23C16/52 ,  C23C16/46

CPC classification number: C23C16/5096 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/32522

Abstract: A substrate processing apparatus for processing a substrate by using a plasma includes a processing chamber configured to airtightly accommodate a substrate, a lower electrode serving as a mounting table configured to mount thereon the substrate in the processing chamber, an upper electrode, serving as a shower plate having a plurality of gas supply openings, provided opposite to the substrate to be mounted on the mounting table, an insulating member disposed to surround an outer peripheral portion of the upper electrode, and a processing gas supply source configured to supply a processing gas into the processing chamber through the shower plate. The substrate processing apparatus further includes a heating unit provided at the insulating member to heat the insulating member.

Abstract translation: 用于使用等离子体处理衬底的衬底处理装置包括：被配置为气密地容纳衬底的处理室，用作安装在其上的衬底的处理室中的下电极，用作淋浴器的上电极 具有多个气体供给开口的多个气体供给开口，设置在与要安装在安装台上的基板相对的位置，设置成围绕上部电极的外周部分设置的绝缘构件，以及处理气体供给源， 处理室通过淋浴板。 基板处理装置还包括设置在绝缘构件上以加热绝缘构件的加热单元。