公开(公告)号：US10900121B2

公开(公告)日：2021-01-26

申请号：US15816864

申请日：2017-11-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki Fukiage ,  Kentaro Oshimo ,  Shimon Otsuki ,  Hideomi Hane ,  Jun Ogawa ,  Hiroaki Ikegawa

IPC: C23C16/455 ,  C23C16/04 ,  C23C16/56 ,  C23C16/34

Abstract: There is provided a film formation processing method for forming, in a vacuum atmosphere, a silicon nitride film along an inner wall surface of a recess constituting a pattern formed on a surface of a substrate, which includes: forming the silicon nitride film on the substrate by repeating, plural times, a process of supplying a raw material gas containing silicon to the substrate and subsequently, supplying an ammonia gas to the substrate to generate a silicon nitride on the substrate; and subsequently, modifying the silicon nitride film by activating a hydrogen gas and an ammonia gas and supplying the activated hydrogen gas and the activated ammonia gas to the substrate.

公开(公告)号：US10714332B2

公开(公告)日：2020-07-14

申请号：US15459441

申请日：2017-03-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki Fukiage ,  Takayuki Karakawa ,  Toyohiro Kamada ,  Akihiro Kuribayashi ,  Takeshi Oyama ,  Jun Ogawa ,  Kentaro Oshimo ,  Shimon Otsuki ,  Hideomi Hane

IPC: H01L21/469 ,  H01L21/02 ,  C23C16/455 ,  C23C16/02 ,  C23C16/34 ,  C23C16/04

Abstract: A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.

公开(公告)号：US10438791B2

公开(公告)日：2019-10-08

申请号：US16005072

申请日：2018-06-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideomi Hane ,  Kentaro Oshimo ,  Shimon Otsuki ,  Jun Ogawa ,  Noriaki Fukiage ,  Hiroaki Ikegawa ,  Yasuo Kobayashi ,  Takeshi Oyama

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/687 ,  H01J37/32 ,  C23C16/34 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52 ,  C23C16/511

Abstract: A film forming process of forming a silicon nitride film by depositing a molecular layer of silicon nitride on a surface of a substrate, in which an uneven pattern is formed and a base made of metal reacting with halogen is exposed, includes alternately performing adsorbing silicon halide to the surface of the substrate and nitriding the silicon halide, wherein the film forming process is performed under a condition in which the substrate is heated at a film-forming temperature, the film-forming temperature falling within a range of equal to or higher than a minimum film-forming temperature at which the molecular layer of the silicon nitride is formed by reaction of the silicon halide and a plasmarized nitriding gas and less than a maximum film-forming temperature at which the reaction of the base made of metal and the silicon halide goes ahead.

公开(公告)号：US09388496B2

公开(公告)日：2016-07-12

申请号：US14602403

申请日：2015-01-22

Applicant: Tokyo Electron Limited

Inventor： Hideomi Hane ,  Takahito Umehara

IPC: H01L21/31 ,  C23C16/458 ,  H01L21/02 ,  C23C16/448 ,  C23C16/44 ,  C23C16/455 ,  H01L21/677 ,  H01L21/687

CPC classification number: C23C16/4584 ,  C23C16/4401 ,  C23C16/448 ,  C23C16/45519 ,  C23C16/45551 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/67748 ,  H01L21/68764 ,  H01L21/68771

Abstract: A method for processing a substrate using a substrate processing apparatus is provided. The substrate processing apparatus includes a process chamber and a rotatable turntable having a substrate receiving part provided in the process chamber. In the method, a substrate is placed on a substrate receiving part, and the substrate is processed by supplying process gases into the process chamber. At least a water vapor is supplied into the chamber when the substrate is placed on the substrate receiving part. After that, the substrate is carried out of the process chamber.

Abstract translation: 提供了使用基板处理装置处理基板的方法。 基板处理装置包括处理室和具有设置在处理室中的基板接收部的可旋转转盘。 在该方法中，将基板放置在基板接收部分上，并且通过将处理气体供应到处理室来处理基板。 当衬底被放置在衬底接收部分上时，至少一个水蒸汽被供应到腔室中。 之后，将基板从处理室中进行。