公开(公告)号：US10550470B2

公开(公告)日：2020-02-04

申请号：US16171667

申请日：2018-10-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideomi Hane ,  Kentaro Oshimo ,  Shimon Otsuki ,  Takeshi Oyama ,  Hiroaki Ikegawa ,  Jun Ogawa

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/458 ,  H01L21/02 ,  H01L21/687 ,  C23C16/46

Abstract: There is provided a film forming apparatus for performing a film forming process by supplying a film forming gas to a substrate in a vacuum atmosphere, comprising: a processing container in which a mounting part for mounting a substrate thereon is provided; a heating part configured to heat the substrate mounted on the mounting part; an exhaust part configured to evacuate an inside of the processing container; a cooling gas supply part configured to supply a cooling gas into the processing container; a purge gas supply part configured to supply a purge gas into the processing container; and a control part configured to output a control signal so as to execute a step of applying a stress to a thin film formed inside the processing container.

公开(公告)号：US20180366315A1

公开(公告)日：2018-12-20

申请号：US16005072

申请日：2018-06-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideomi Hane ,  Kentaro Oshimo ,  Shimon Otsuki ,  Jun Ogawa ,  Noriaki Fukiage ,  Hiroaki Ikegawa ,  Yasuo Kobayashi ,  Takeshi Oyama

IPC: H01L21/02 ,  H01L21/687 ,  H01J37/32 ,  C23C16/34 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45553 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32 ,  H01J37/3222 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/20214 ,  H01J2237/3321 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/68764 ,  H01L21/68771

Abstract: A film forming process of forming a silicon nitride film by depositing a molecular layer of silicon nitride on a surface of a substrate, in which an uneven pattern is formed and a base made of metal reacting with halogen is exposed, includes alternately performing adsorbing silicon halide to the surface of the substrate and nitriding the silicon halide, wherein the film forming process is performed under a condition in which the substrate is heated at a film-forming temperature, the film-forming temperature falling within a range of equal to or higher than a minimum film-forming temperature at which the molecular layer of the silicon nitride is formed by reaction of the silicon halide and a plasmarized nitriding gas and less than a maximum film-forming temperature at which the reaction of the base made of metal and the silicon halide goes ahead.

公开(公告)号：US11414753B2

公开(公告)日：2022-08-16

申请号：US17086634

申请日：2020-11-02

Applicant: Tokyo Electron Limited

Inventor： Hideomi Hane ,  Takeshi Oyama ,  Kentaro Oshimo ,  Yusuke Suzuki ,  Jun Ogawa

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/511 ,  B08B9/00

Abstract: A processing method according to one aspect of the present disclosure includes varying pressure of a processing chamber in a state in which a plasma of a purge gas is formed in the processing chamber, the varying including removing a film deposited in the processing chamber, with the formed plasma.

公开(公告)号：US10151031B2

公开(公告)日：2018-12-11

申请号：US15617102

申请日：2017-06-08

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Jun Sato ,  Masahiro Murata ,  Kentaro Oshimo ,  Tomoko Sugano ,  Shigehiro Miura

IPC: H01L21/02 ,  C23C16/458 ,  C23C16/455 ,  C23C16/34 ,  C23C16/507 ,  C23C16/52

Abstract: A method for processing a substrate is provided. According to the method, a process gas is supplied to a surface of a substrate, and then a separation gas is supplied to the surface of the substrate. Moreover, a first plasma processing gas is supplied to the surface of the substrate in a first state in which a distance between the first plasma generation unit and the turntable is set at a first distance, and a second plasma processing gas is supplied to the surface of the substrate in a second state in which a distance between the second plasma generation unit and the turntable is set at a second distance shorter than the first distance. Furthermore, the separation gas is supplied to the surface of the substrate.

公开(公告)号：US20180142350A1

公开(公告)日：2018-05-24

申请号：US15816864

申请日：2017-11-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki Fukiage ,  Kentaro Oshimo ,  Shimon Otsuki ,  Hideomi Hane ,  Jun Ogawa ,  Hiroaki Ikegawa

IPC: C23C16/455

CPC classification number: C23C16/45544 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45502 ,  C23C16/45551 ,  C23C16/56

Abstract: There is provided a film formation processing method for forming, in a vacuum atmosphere, a silicon nitride film along an inner wall surface of a recess constituting a pattern formed on a surface of a substrate, which includes: forming the silicon nitride film on the substrate by repeating, plural times, a process of supplying a raw material gas containing silicon to the substrate and subsequently, supplying an ammonia gas to the substrate to generate a silicon nitride on the substrate; and subsequently, modifying the silicon nitride film by activating a hydrogen gas and an ammonia gas and supplying the activated hydrogen gas and the activated ammonia gas to the substrate.

公开(公告)号：US09777369B2

公开(公告)日：2017-10-03

申请号：US14303763

申请日：2014-06-13

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Masahiro Murata ,  Kentaro Oshimo ,  Shigehiro Miura

IPC: C23C16/00 ,  C23C16/34 ,  H01J37/32 ,  C23C16/455

CPC classification number: C23C16/345 ,  C23C16/45536 ,  C23C16/45557 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32623 ,  H01J37/32651 ,  H01J37/32715 ,  H01J37/32779 ,  H01J37/32816

Abstract: A method of depositing a thin film on a substrate inside a vacuum chamber includes a first process that deposits a first film on the substrate, the first process including a process of supplying an active species that is obtained by changing a gas to plasma and is related to a quality of the thin film to the substrate; and a second process that deposits a second film that is the same type as that of the first film on the first film, the second process including a process of supplying the active species to the substrate so that a supply quantity of the active species per a unit film thickness is greater than a first supply quantity of the active species per the unit film thickness in the first process by adjusting a controlled parameter.

公开(公告)号：US09136133B2

公开(公告)日：2015-09-15

申请号：US14308880

申请日：2014-06-19

Applicant: Tokyo Electron Limited

Inventor： Kentaro Oshimo ,  Masato Koakutsu ,  Hiroko Sasaki ,  Hiroaki Ikegawa

IPC: H01L21/00 ,  H01L21/285 ,  H01L21/3205 ,  H01L49/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56

CPC classification number: H01L21/28562 ,  C23C16/34 ,  C23C16/45551 ,  C23C16/56 ,  H01L21/32051 ,  H01L28/00

Abstract: A method of depositing a film is provided. In the method, a first process gas and a second process gas that react with each other is sequentially supplied to cause an atomic layer or a molecular layer of a reaction product of the first process gas and the second process gas to deposit on a substrate in a chamber by repeating a cycle of sequentially supplying the first process gas and the second process gas to the substrate once each cycle. A cycle time of the cycle is set equal to or shorter than 0.5 seconds.

Abstract translation: 提供了一种沉积薄膜的方法。 在该方法中，依次提供彼此反应的第一处理气体和第二处理气体，以使第一处理气体和第二处理气体的反应产物的原子层或分子层沉积在基板上 一个室，通过重复一个循环，每循环一次地向基板依次提供第一处理气体和第二处理气体。 循环的循环时间设定为等于或小于0.5秒。

公开(公告)号：US20140179104A1

公开(公告)日：2014-06-26

申请号：US14134065

申请日：2013-12-19

Applicant: Tokyo Electron Limited

Inventor： Kentaro Oshimo ,  Masato Koakutsu ,  Hiroko Sasaki ,  Hiroaki Ikegawa

IPC: H01L21/02 ,  H01L21/687 ,  H01L21/285

CPC classification number: H01L21/0228 ,  C23C16/34 ,  C23C16/4404 ,  C23C16/45551 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76841

Abstract: A method of depositing a film using an atomic layer deposition (ALD) method while rotating a turntable provided inside a chamber and including a substrate mounting portion, onto which a substrate can be mounted, to cause the substrate to pass through first and second process areas, into which different gases to be mutually reacted are respectively supplied, including coating the turntable with the film under a state where the wafer is not mounted onto the turntable, the turntable is rotated, and the substrate mounting portion has a predetermined temperature; and processing to deposit the film on the wafer under a state where the wafer is mounted onto the turntable, the turntable is rotated, and the substrate has a temperature equal to or less than the predetermined temperature.

Abstract translation: 一种使用原子层沉积（ALD）方法沉积膜的方法，同时旋转设置在室内的转盘并且包括可安装基板的基板安装部分，以使基板通过第一和第二处理区域 分别供应相互反应的不同气体，包括在晶片未安装在转台上的状态下将薄片涂覆在转盘上，转台旋转，基板安装部分具有预定温度; 以及在将晶片安装在转台上的状态下将薄膜沉积在晶片上的处理，转盘旋转，并且基板具有等于或小于预定温度的温度。

公开(公告)号：US11201053B2

公开(公告)日：2021-12-14

申请号：US16890216

申请日：2020-06-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki Fukiage ,  Takayuki Karakawa ,  Toyohiro Kamada ,  Akihiro Kuribayashi ,  Takeshi Oyama ,  Jun Ogawa ,  Kentaro Oshimo ,  Shimon Otsuki ,  Hideomi Hane

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/02 ,  C23C16/04 ,  C23C16/34

Abstract: A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.

公开(公告)号：US11171014B2

公开(公告)日：2021-11-09

申请号：US16002081

申请日：2018-06-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideomi Hane ,  Kentaro Oshimo ,  Shimon Otsuki ,  Jun Ogawa ,  Noriaki Fukiage ,  Hiroaki Ikegawa ,  Yasuo Kobayashi ,  Takeshi Oyama

IPC: H01L21/32 ,  H01L21/3213 ,  H01L21/02 ,  H01J37/32

Abstract: There is provided a substrate processing method, including: forming a silicon nitride film laminated on an etching target film by supplying a film forming gas to a substrate; oxidizing a surface of the silicon nitride film to form an oxide layer by supplying an oxidizing gas to the substrate; and etching the etching target film by supplying an etching gas containing halogen to the substrate, in a state in which the etching target film and the oxide layer are exposed on a surface of the substrate.