公开(公告)号：US11062881B2

公开(公告)日：2021-07-13

申请号：US16977856

申请日：2019-07-19

Applicant: Tokyo Electron Limited

Inventor： Masayuki Sawataishi ,  Jun Hirose

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/683 ,  H01L21/687

Abstract: A plasma etching method according to an exemplary embodiment comprises arranging a substrate on an electrostatic chuck in a region surrounded by a focus ring. The substrate, in a state of being held by the electrostatic chuck, is etched by means of ions from a plasma. The electrostatic chuck includes a plurality of electrodes including a first electrode and a second electrode. The first electrode extends under a central region of the substrate. The second electrode extends under an edge region of the substrate. A plurality of voltages are respectively applied to the plurality of electrodes, wherein the plurality of voltages are determined such that, in the state in which the substrate is held by the electrostatic chuck, the ions from the plasma are incident on both the central region and the edge region substantially vertically.

公开(公告)号：US10859426B2

公开(公告)日：2020-12-08

申请号：US16117630

申请日：2018-08-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun Hirose ,  Norihiko Amikura ,  Risako Miyoshi ,  Shinobu Onodera

IPC: G01F25/00 ,  G01F3/22 ,  G05D7/00 ,  G01F15/00

Abstract: Disclosed is a method of inspecting a flow rate measuring system used in a substrate processing system. The flow rate measuring system provides a gas flow path used for calculating a flow rate in a build-up method. A gas output by a flow rate controller of a gas supply unit of the substrate processing system may be supplied to the gas flow path. In the method, apart from a previously obtained initial value of a volume of the gas flow path, a volume of the gas flow path is obtained at the time of inspection of the flow rate measuring system. Then, the obtained volume is compared to the initial value.

公开(公告)号：US10361089B2

公开(公告)日：2019-07-23

申请号：US15989291

申请日：2018-05-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kengo Kaneko ,  Jun Hirose

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/311 ,  H01L21/3213

Abstract: A plasma processing method according to an exemplary embodiment includes a process of applying a first plasma processing to a substrate in a chamber, and a process of applying a second plasma processing to the substrate in the chamber. In the process of applying the first plasma processing, a plurality of first heaters in a chuck main body of an electrostatic chuck are driven, and a plurality of second heaters in the chuck main body are driven. In the process of applying the second plasma processing, the driving of at least the plurality of second heaters is stopped.

公开(公告)号：US20210343559A1

公开(公告)日：2021-11-04

申请号：US17242736

申请日：2021-04-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Norihiko AMIKURA ,  Jun Hirose

IPC: H01L21/67 ,  H01L21/687

Abstract: A processing system capable of increasing an operating time of the processing system is provided. The processing system includes a vacuum transfer module, a plurality of processing modules, a plurality of load-lock modules, and a plurality of atmospheric transfer modules. The vacuum transfer module is configured to transfer a substrate in a pressure lower than an atmospheric pressure. The processing modules are connected to the vacuum transfer module and configured to process the substrate. The load-lock modules are connected to the vacuum transfer module. Each of the atmospheric transfer modules is connected to at least one of the load-lock modules and configured to transfer the substrate in an atmospheric environment.

公开(公告)号：US10020172B2

公开(公告)日：2018-07-10

申请号：US14721090

申请日：2015-05-26

Applicant: Tokyo Electron Limited

Inventor： Mitsunori Ohata ,  Hidetoshi Kimura ,  Kiyoshi Maeda ,  Jun Hirose ,  Tsuyoshi Hida

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687 ,  C23C16/52

CPC classification number: H01J37/32642 ,  C23C16/52 ,  H01J37/32091 ,  H01L21/67069 ,  H01L21/68735

Abstract: There is provided a plasma processing apparatus including a susceptor, having a substrate mounting portion for mounting thereon a substrate; a focus ring including an outer ring and an inner ring; a dielectric ring; a dielectric constant varying device for varying a dielectric constant of the dielectric ring; a grounding body positioned at an outside of the dielectric ring with a gap from a bottom surface of the focus ring; and a controller for controlling a top surface electric potential of the focus ring by controlling a current flowing from the susceptor to the substrate.