PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND STORAGE MEDIUM FOR STORING PROGRAM FOR EXECUTING THE METHOD
    4.
    发明申请
    PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND STORAGE MEDIUM FOR STORING PROGRAM FOR EXECUTING THE METHOD 有权
    等离子体处理装置,等离子体处理方法和存储程序存储程序用于执行方法

    公开(公告)号:US20150255255A1

    公开(公告)日:2015-09-10

    申请号:US14721090

    申请日:2015-05-26

    Abstract: There is provided a plasma processing apparatus including a susceptor, having a substrate mounting portion for mounting thereon a substrate; a focus ring including an outer ring and an inner ring; a dielectric ring; a dielectric constant varying device for varying a dielectric constant of the dielectric ring; a grounding body positioned at an outside of the dielectric ring with a gap from a bottom surface of the focus ring; and a controller for controlling a top surface electric potential of the focus ring by controlling a current flowing from the susceptor to the substrate.

    Abstract translation: 提供了一种包括基座的等离子体处理装置,具有用于安装基板的基板安装部分; 包括外圈和内圈的聚焦环; 介电环; 用于改变介电环的介电常数的介电常数可变装置; 位于所述电介质环外侧的接地体,与所述聚焦环的底面间隔开间隙; 以及控制器,用于通过控制从基座流到基板的电流来控制聚焦环的顶表面电位。

    Electrostatic chuck and manufacturing method thereof
    5.
    发明授权
    Electrostatic chuck and manufacturing method thereof 有权
    静电吸盘及其制造方法

    公开(公告)号:US08776356B2

    公开(公告)日:2014-07-15

    申请号:US13948921

    申请日:2013-07-23

    Abstract: An electrostatic chuck of a stack structure includes a metal layer interposed between insulating layers and a groove formed at a peripheral portion of the electrostatic chuck to have a thickness gradually increasing toward an outside, the groove being covered with a thermally sprayed insulating film. The thermally sprayed film covers at least a portion of the metal layer exposed at an inside of the groove such that the thermally sprayed film does not protrude from the groove.

    Abstract translation: 堆叠结构的静电卡盘包括插入在绝缘层之间的金属层和形成在静电卡盘的周边部分处的具有朝向外部逐渐增加的厚度的槽,该槽被热喷涂的绝缘膜覆盖。 喷镀膜覆盖暴露在槽内部的金属层的至少一部分,使得喷镀膜不会从槽突出。

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