Abstract:
A placement apparatus for placing a workpiece is provided. The placement apparatus includes a stage on which a workpiece can be placed in a processing vessel; an edge ring including a locking part which is disposed on the stage so as to surround a periphery of the workpiece; a conductive connecting member connected with the edge ring at the locking part; and a first contacting member configured to cause the edge ring to contact the stage, while the edge ring is connected with the connecting member.
Abstract:
There is provided a plasma processing apparatus including a susceptor, having a substrate mounting portion for mounting thereon a substrate; a focus ring including an outer ring and an inner ring; a dielectric ring; a dielectric constant varying device for varying a dielectric constant of the dielectric ring; a grounding body positioned at an outside of the dielectric ring with a gap from a bottom surface of the focus ring; and a controller for controlling a top surface electric potential of the focus ring by controlling a current flowing from the susceptor to the substrate.
Abstract:
A placement apparatus for placing a workpiece is provided. The placement apparatus includes a stage on which a workpiece can be placed in a processing vessel; an edge ring including a locking part which is disposed on the stage so as to surround a periphery of the workpiece; a conductive connecting member connected with the edge ring at the locking part; and a first contacting member configured to cause the edge ring to contact the stage, while the edge ring is connected with the connecting member.
Abstract:
There is provided a plasma processing apparatus including a susceptor, having a substrate mounting portion for mounting thereon a substrate; a focus ring including an outer ring and an inner ring; a dielectric ring; a dielectric constant varying device for varying a dielectric constant of the dielectric ring; a grounding body positioned at an outside of the dielectric ring with a gap from a bottom surface of the focus ring; and a controller for controlling a top surface electric potential of the focus ring by controlling a current flowing from the susceptor to the substrate.
Abstract:
An electrostatic chuck of a stack structure includes a metal layer interposed between insulating layers and a groove formed at a peripheral portion of the electrostatic chuck to have a thickness gradually increasing toward an outside, the groove being covered with a thermally sprayed insulating film. The thermally sprayed film covers at least a portion of the metal layer exposed at an inside of the groove such that the thermally sprayed film does not protrude from the groove.