-
公开(公告)号：US11569073B2
公开(公告)日：2023-01-31
申请号：US16110201
申请日：2018-08-23
发明人： Jun Hirose , Kaoru Oohashi
IPC分类号： H01J37/32 , H01L21/683 , H01L21/687 , H01L21/67
摘要： An assembly provided with a coolant flow channel includes a base in which the coolant flow channel is formed; and a protrusion component that is disposed in the coolant flow channel, wherein the protrusion component is liftable or rotatable.
-
公开(公告)号：US12068139B2
公开(公告)日：2024-08-20
申请号：US15692357
申请日：2017-08-31
发明人： Shin Matsuura , Jun Hirose
IPC分类号： H01J37/32 , C23C16/455 , C23C16/458 , H01L21/67
CPC分类号： H01J37/32577 , C23C16/45517 , C23C16/4585 , H01J37/32174 , H01J37/32513 , H01J37/32633 , H01J37/32651 , H01J37/32009 , H01J37/32091 , H01J37/32743 , H01L21/67069
摘要： A plasma processing apparatus of the present disclosure includes a chamber, a shutter, and a contact portion. The chamber has an opening in a sidewall thereof so as to carry a wafer W into the chamber through the opening, and performs therein a predetermined processing on the wafer W by plasma of a processing gas supplied thereinto. The shutter opens or closes the opening by moving along the sidewall of the chamber. The contact portion is formed of a conductive material, and is not in contact with the shutter while the shutter is moving. When the shutter is in the position for closing the opening, the contact portion is displaced in a direction different from the direction of movement of the shutter to come into contact with the shutter.
-
公开(公告)号：US11532467B2
公开(公告)日：2022-12-20
申请号：US17009908
申请日：2020-09-02
发明人： Takehiro Ueda , Jun Hirose , Kazuyuki Tezuka
摘要： A maintenance device has a cover and a fixing member. The cover is in a vacuum atmosphere during substrate processing, is formed to have a size corresponding to a boundary line between a first part and a second part of a processing container, which can be separated into the first part and the second part, or an opening surface separating the first part and the second part, and has airtightness, and visual transparency at least in a part. The fixing member fixes in an airtight manner the cover along the boundary line between the first part and the second part of the processing container or to the opening surface separating the first part and the second part.
-
公开(公告)号：US11501995B2
公开(公告)日：2022-11-15
申请号：US16737267
申请日：2020-01-08
发明人： Yohei Uchida , Jun Hirose
IPC分类号： H01L21/687 , H01L21/683 , H01J37/32
摘要： A mounting table includes a wafer mounting surface mounting a wafer, a ring mounting surface disposed at a radially outer side of the wafer mounting surface and mounting a first ring having a first engaging portion and a second ring having a second engaging portion to be engaged with the first engaging portion, a lifter pin, and a driving mechanism. The second ring has a through-hole extends to reach a bottom surface of the first engaging portion, and the ring mounting surface has a hole at a position corresponding to the through-hole. A lifter pin has a first holding part that fits into the through-hole and a second holding part that extends from the first holding part and has a part protruding from the first holding part. The lifter pin is accommodated in the hole, and a driving mechanism vertically moves the lifter pin.
-
公开(公告)号：US12040166B2
公开(公告)日：2024-07-16
申请号：US17504578
申请日：2021-10-19
发明人： Atsushi Sawachi , Jun Hirose , Takuya Nishijima , Ichiro Sone , Suguru Sato
IPC分类号： H01J37/32
CPC分类号： H01J37/32733 , H01J37/3244 , H01J37/32899
摘要： A substrate processing apparatus is provided. The substrate processing apparatus comprise: a first chamber including a sidewall providing an opening, the first chamber further including a movable part movable upward and downward within the first chamber; a substrate support disposed within the first chamber; a second chamber disposed within the first chamber and defining, together with the substrate support, a processing space in which a substrate mounted on the substrate support is processed, the second chamber being separable from the first chamber and transportable between an inner space of the first chamber and the outside of the first chamber via the opening; a clamp releasably fixing the second chamber to the movable part extending above the second chamber; a release mechanism configured to release the fixing of the second chamber by the clamp; and a lift mechanism configured to move the movable part upward and downward.
-
公开(公告)号：US11443925B2
公开(公告)日：2022-09-13
申请号：US16871464
申请日：2020-05-11
发明人： Takehiro Ueda , Jun Hirose
IPC分类号： H01J37/32
摘要： A substrate support for use in a plasma processing chamber includes a substrate support body, a lifter pin and a lift mechanism. The substrate support body has a pin through-hole and the pin through-hole has a female-threaded inner wall. The lifter pin has a base segment, an intermediate segment, and a leading segment. The lifter pin is inserted into the pin through-hole, the intermediate segment is male-threaded, and the male-threaded intermediate segment is screwable to the female-threaded inner wall. The lift mechanism is configured to vertically move the lifter pin relative to the substrate support body.
-
公开(公告)号：US11309168B2
公开(公告)日：2022-04-19
申请号：US15897228
申请日：2018-02-15
发明人： Takehiro Ueda , Jun Hirose
IPC分类号： H01J37/32
摘要： A maintenance apparatus includes a case and a maintenance mechanism. The case includes an opening having a size corresponding to a second gate of a vacuum processing apparatus including a processing chamber having a first gate through which a substrate is loaded and unloaded and the second gate different from the first gate. The case is attachable to the second gate while maintaining airtightness. The maintenance mechanism is provided in the case and is configured to perform at least one of an operation of detaching a consumed part in the processing chamber through the opening, an operation of attaching a replacement part in the processing chamber and an operation of cleaning the processing chamber.
-
公开(公告)号：US11062881B2
公开(公告)日：2021-07-13
申请号：US16977856
申请日：2019-07-19
发明人： Masayuki Sawataishi , Jun Hirose
IPC分类号： H01J37/32 , H01L21/311 , H01L21/683 , H01L21/687
摘要： A plasma etching method according to an exemplary embodiment comprises arranging a substrate on an electrostatic chuck in a region surrounded by a focus ring. The substrate, in a state of being held by the electrostatic chuck, is etched by means of ions from a plasma. The electrostatic chuck includes a plurality of electrodes including a first electrode and a second electrode. The first electrode extends under a central region of the substrate. The second electrode extends under an edge region of the substrate. A plurality of voltages are respectively applied to the plurality of electrodes, wherein the plurality of voltages are determined such that, in the state in which the substrate is held by the electrostatic chuck, the ions from the plasma are incident on both the central region and the edge region substantially vertically.
-
公开(公告)号：US10859426B2
公开(公告)日：2020-12-08
申请号：US16117630
申请日：2018-08-30
发明人： Jun Hirose , Norihiko Amikura , Risako Miyoshi , Shinobu Onodera
摘要： Disclosed is a method of inspecting a flow rate measuring system used in a substrate processing system. The flow rate measuring system provides a gas flow path used for calculating a flow rate in a build-up method. A gas output by a flow rate controller of a gas supply unit of the substrate processing system may be supplied to the gas flow path. In the method, apart from a previously obtained initial value of a volume of the gas flow path, a volume of the gas flow path is obtained at the time of inspection of the flow rate measuring system. Then, the obtained volume is compared to the initial value.
-
公开(公告)号：US10361089B2
公开(公告)日：2019-07-23
申请号：US15989291
申请日：2018-05-25
发明人： Kengo Kaneko , Jun Hirose
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/67 , H01L21/683 , H01L21/311 , H01L21/3213
摘要： A plasma processing method according to an exemplary embodiment includes a process of applying a first plasma processing to a substrate in a chamber, and a process of applying a second plasma processing to the substrate in the chamber. In the process of applying the first plasma processing, a plurality of first heaters in a chuck main body of an electrostatic chuck are driven, and a plurality of second heaters in the chuck main body are driven. In the process of applying the second plasma processing, the driving of at least the plurality of second heaters is stopped.
-
-
-
-
-
-
-
-
-
搜索结果
14 条记录 (耗时 0.02 秒)
