公开(公告)号：US12018928B2

公开(公告)日：2024-06-25

申请号：US17853455

申请日：2022-06-29

Applicant: Tokyo Electron Limited

Inventor： Kazunaga Ono ,  Kanto Nakamura ,  Toru Kitada ,  Atsushi Gomi

IPC: G01B11/06 ,  G01N21/95 ,  G01N21/21

CPC classification number: G01B11/0675 ,  G01N21/9501 ,  G01N2021/213

Abstract: There is provided a film thickness measurement method which measures a film thickness of a specific film to be measured in a multilayer film in situ in a film formation system that forms the multilayer film on a substrate, the method comprising: regarding a plurality of films located under the film to be measured as one underlayer film, measuring a film thickness of the underlayer film, and deriving an optical constant of the underlayer film by spectroscopic interferometry; and after the film to be measured is formed, deriving a film thickness of the film to be measured by spectroscopic interferometry using the film thickness and the optical constant of the underlayer film.

公开(公告)号：US20240011148A1

公开(公告)日：2024-01-11

申请号：US18339920

申请日：2023-06-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Atsushi TAKEUCHI ,  Kazunaga Ono ,  Kanto Nakamura ,  Atsushi Gomi

IPC: C23C14/54 ,  C23C14/04 ,  C23C14/34

CPC classification number: C23C14/547 ,  C23C14/042 ,  C23C14/34

Abstract: There is provided a film forming position misalignment correction method comprising: replacing a shielding member; loading a substrate into a film forming module by a transfer mechanism and forming a film on the substrate; detecting an amount of film forming position misalignment by transferring the substrate on which the film has been formed to a film thickness measuring device; correcting a transfer position of the substrate for the transfer mechanism; and checking the correction by transferring the substrate used for measuring the amount of film forming position misalignment to the film forming module by the transfer mechanism for which the transfer position has been corrected to form a film and determining the amount of film forming position misalignment by measuring a film thickness of the formed film by the film thickness measuring device in the same manner.

公开(公告)号：US20150136596A1

公开(公告)日：2015-05-21

申请号：US14402775

申请日：2013-04-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kanto Nakamura ,  Toru Kitada ,  Atsushi Gomi ,  Tetsuya Miyashita

IPC: H01J37/34

CPC classification number: H01J37/3455 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/3452

Abstract: A magnetron sputtering apparatus includes a target disposed to face a substrate mounted on a mounting part in a vacuum vessel and a magnet arrangement assembly installed at a back side of the target and having an array of magnets, the magnetron sputtering apparatus including: a gas supply part configured to supply a plasma generation gas into the vacuum vessel; a rotary mechanism configured to rotate the mounting part; a power supply part configured to apply a voltage to the target; a moving mechanism configured to move the magnet arrangement assembly between a first region and a second region; and a control unit configured to output a control signal, such that an average moving speed of the magnet arrangement assembly is different between the first region and the second region.

Abstract translation: 磁控管溅射装置包括：设置成面对安装在真空容器中的安装部分上的基板的靶和安装在靶的背面并具有磁体阵列的磁体布置组件，磁控溅射装置包括：气体供应 配置成将等离子体产生气体供应到真空容器中的部分; 旋转机构，其构造成旋转所述安装部; 配置为向所述目标施加电压的电源部; 移动机构，其构造成在第一区域和第二区域之间移动磁体布置组件; 以及控制单元，被配置为输出控制信号，使得所述磁体布置组件的平均移动速度在所述第一区域和所述第二区域之间不同。