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    FILM FORMING APPARATUS, PROCESSING CONDITION DETERMINATION METHOD, AND FILM FORMING METHOD
    3.
    发明申请
    FILM FORMING APPARATUS, PROCESSING CONDITION DETERMINATION METHOD, AND FILM FORMING METHOD 有权

    公开(公告)号：US20220415634A1

    公开(公告)日：2022-12-29

    申请号：US17843076

    申请日：2022-06-17

    Applicant: Tokyo Electron Limited

    Inventor： Kenichi Imakita ,  Hiroaki Chihaya ,  Toru Kitada ,  Atsushi Gomi

    IPC: H01J37/34 ,  H01L43/12 ,  H01J37/32 ,  C23C14/35 ,  C23C14/54

    Abstract: A film forming apparatus for forming a film by magnetron sputtering includes a substrate support supporting the substrate, a holder holding a target for emitting sputtered particles, a magnet unit having a magnet, first and second movement mechanisms configured to periodically move the substrate support and the magnet unit, respectively, and a controller. The controller is configured to control the first movement mechanism and the second movement mechanism so that a phase in a periodic movement of the substrate support remains the same at a start of film formation and at an end of film formation, a phase in a periodic movement of the magnet unit remains the same at a start of film formation and at an end of film formation, and the phase in the periodic movement of the substrate support and the phase in the periodic movement of the magnet unit do not match during film formation.

    FILM FORMING APPARATUS AND FILM FORMING METHOD
    4.
    发明申请
    FILM FORMING APPARATUS AND FILM FORMING METHOD 有权

    公开(公告)号：US20220403503A1

    公开(公告)日：2022-12-22

    申请号：US17840055

    申请日：2022-06-14

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Hiroyuki Iwashita ,  Toru Kitada ,  Atsushi Shimada

    IPC: C23C14/34 ,  C23C14/00 ,  C23C14/10 ,  C23C14/54

    Abstract: A film forming apparatus for forming a metal oxide film on a substrate, includes: a substrate support part configured to support the substrate; a heating mechanism configured to heat the substrate supported by the substrate support part; a processing container in which the substrate support part is provided; a holder configured to hold a metal material target inside the processing container and connected to a power source; a gas supply part configured to supply an oxygen gas into the processing container; and a controller, wherein the controller is configured to control the heating mechanism, the power source, and the gas supply part so as to execute alternately and repeatedly: forming a predetermined film on the substrate inside the processing container by reactive sputtering in a metal mode; and forming a target metal oxide film by causing the predetermined film to react with an oxygen gas inside the processing container.

    Vacuum-Processing Apparatus, Vacuum-Processing Method, and Storage Medium
    5.
    发明申请
    Vacuum-Processing Apparatus, Vacuum-Processing Method, and Storage Medium 有权
    真空处理设备，真空处理方法和存储介质

    公开(公告)号：US20150187546A1

    公开(公告)日：2015-07-02

    申请号：US14403833

    申请日：2013-04-30

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Shinji Furukawa ,  Atsushi Gomi ,  Tetsuya Miyashita ,  Toru Kitada ,  Kanto Nakamura

    IPC: H01J37/34 ,  C23C14/08 ,  C23C14/34

    CPC classification number: C23C14/5853 ,  C23C14/08 ,  C23C14/14 ,  C23C14/3464 ,  C23C14/352 ,  C23C14/564 ,  H01J37/34 ,  H01J37/3405 ,  H01J37/3426 ,  H01J37/3429 ,  H01J37/3447 ,  H01J2237/3322 ,  H01L43/12

    Abstract: The present disclosure provides a vacuum-processing apparatus for forming a metal film on a substrate by sputtering targets with ions of plasma, and then oxidizing the metal film, the apparatus including: a first target composed of a material having a property of adsorbing oxygen; a second target composed of a metal; a power supply unit configured to apply a voltage to the targets; a shutter configured to prevent particles generated from one of the targets from adhering to the other of the targets; a shielding member; an oxygen supply unit configured to supply an oxygen-containing gas to the substrate mounted on the mounting unit; and a control unit configured to perform supplying a plasma-generating voltage to the targets and sputtering the targets and supplying the oxygen-containing gas from the oxygen supply unit to the substrate.

    Abstract translation: 本发明提供一种真空处理装置，用于通过用等离子体离子溅射靶材在基板上形成金属膜，然后氧化金属膜，该装置包括：由具有吸附氧性质的材料构成的第一靶; 由金属组成的第二个目标; 配置为向所述目标施加电压的电源单元; 构造成防止从一个靶产生的颗粒粘附到另一个靶的快门; 屏蔽构件; 供氧单元，被配置为向安装在所述安装单元上的所述基板供给含氧气体; 以及控制单元，其被配置为执行向所述目标提供等离子体产生电压并溅射所述目标物并将所述含氧气体从所述供氧单元供应到所述基板。

    MAGNETRON SPUTTERING DEVICE, MAGNETRON SPUTTERING METHOD, AND NON-TRANSITORY COMPUTER-READABLE STORAGE MEDIUM
    7.
    发明申请
    MAGNETRON SPUTTERING DEVICE, MAGNETRON SPUTTERING METHOD, AND NON-TRANSITORY COMPUTER-READABLE STORAGE MEDIUM 审中-公开
    MAGNETRON SPUTTERING DEVICE，MAGNETRON SPUTTERING方法和非终端计算机可读存储介质

    公开(公告)号：US20150136596A1

    公开(公告)日：2015-05-21

    申请号：US14402775

    申请日：2013-04-11

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Kanto Nakamura ,  Toru Kitada ,  Atsushi Gomi ,  Tetsuya Miyashita

    IPC: H01J37/34

    CPC classification number: H01J37/3455 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/3452

    Abstract: A magnetron sputtering apparatus includes a target disposed to face a substrate mounted on a mounting part in a vacuum vessel and a magnet arrangement assembly installed at a back side of the target and having an array of magnets, the magnetron sputtering apparatus including: a gas supply part configured to supply a plasma generation gas into the vacuum vessel; a rotary mechanism configured to rotate the mounting part; a power supply part configured to apply a voltage to the target; a moving mechanism configured to move the magnet arrangement assembly between a first region and a second region; and a control unit configured to output a control signal, such that an average moving speed of the magnet arrangement assembly is different between the first region and the second region.

    Abstract translation: 磁控管溅射装置包括：设置成面对安装在真空容器中的安装部分上的基板的靶和安装在靶的背面并具有磁体阵列的磁体布置组件，磁控溅射装置包括：气体供应 配置成将等离子体产生气体供应到真空容器中的部分; 旋转机构，其构造成旋转所述安装部; 配置为向所述目标施加电压的电源部; 移动机构，其构造成在第一区域和第二区域之间移动磁体布置组件; 以及控制单元，被配置为输出控制信号，使得所述磁体布置组件的平均移动速度在所述第一区域和所述第二区域之间不同。

    MAGNETRON SPUTTERING APPARATUS
    9.
    发明申请
    MAGNETRON SPUTTERING APPARATUS 审中-公开
    MAGNETRON喷射装置

    公开(公告)号：US20150187549A1

    公开(公告)日：2015-07-02

    申请号：US14404143

    申请日：2013-03-28

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Toru Kitada ,  Kanto Nakamura ,  Atsushi Gomi ,  Tetsuya Miyashita

    IPC: H01J37/34

    CPC classification number: H01J37/3455 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/3447 ,  H01J37/3452 ,  H01J2237/332

    Abstract: To provide technology that can increase the productivity of an apparatus when magnetron sputtering is carried out using a target formed from magnetic material. The present disclosure is an apparatus provided with: a cylindrical body that is a target formed from magnetic material, disposed above a substrate; a rotating mechanism that rotates this cylindrical body around the axis of the cylindrical body; a magnet array provided inside a hollow part of the cylindrical body; and a power supply that applies voltage to the cylindrical body. Furthermore, the magnet array has a cross sectional profile, orthogonal to the axis of the cylindrical body. Thus, even if a target with a comparatively large thickness is used, reductions in the intensity of the magnetic field that leaks from the target can be suppressed, and local progress in erosion can be suppressed.

    Abstract translation: 提供使用由磁性材料形成的靶进行磁控溅射时能够提高装置的生产率的技术。 本公开是一种设备，其具有：设置在基板上方的由磁性材料形成的靶的圆筒体; 旋转机构，其使该圆筒体围绕圆柱体的轴线旋转; 设置在所述圆筒体的中空部内的磁体阵列; 以及向圆柱体施加电压的电源。 此外，磁体阵列具有与圆柱体的轴线正交的横截面轮廓。 因此，即使使用厚度较大的靶，也能够抑制从目标泄漏的磁场强度的降低，能够抑制局部的侵蚀。

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