公开(公告)号：US11774854B2

公开(公告)日：2023-10-03

申请号：US17959517

申请日：2022-10-04

Applicant: Tokyo Electron Limited

Inventor： Yusaku Hashimoto ,  Kouichirou Tanaka ,  Masahiro Fukuda ,  Atsushi Ookouchi

IPC: G03F7/16

CPC classification number: G03F7/16

Abstract: A method of processing a substrate includes: performing a first developing process of moving a nozzle having one end surface and a discharge port opened at the end surface while making the end surface come into contact with a developer on a front surface of a substrate in a state in which the nozzle is disposed so that the end surface faces the front surface and the developer is discharged from the discharge port at a first flow rate while rotating the substrate; and after the first developing process, performing a second developing process of discharging the developer from the discharge port at a second flow rate higher than the first flow rate in a state in which the end surface is in contact with the developer on the front surface at a position facing a center of the front surface of the substrate while rotating the substrate.

公开(公告)号：US11693322B2

公开(公告)日：2023-07-04

申请号：US17130126

申请日：2020-12-22

Applicant: Tokyo Electron Limited

Inventor： Takuya Miura ,  Shougo Takahashi ,  Kouichirou Tanaka

IPC: B08B3/02 ,  G03F7/42 ,  B08B3/08 ,  B08B13/00 ,  B08B5/02

CPC classification number: G03F7/422 ,  B08B3/02 ,  B08B3/08 ,  B08B5/02 ,  B08B13/00

Abstract: A liquid processing apparatus includes a substrate holder configured to hold a substrate; a processing liquid supply configured to supply a processing liquid onto a front surface of the substrate; a gas supply configured to supply a gas onto the front surface of the substrate; and a controller. The gas supply includes a diffusion nozzle which is provided with multiple discharge openings respectively elongated at different angles with respect to the front surface of the substrate. The controller performs controlling the gas supply to jet the gas from the diffusion nozzle onto a region of the front surface of the substrate including at least a central portion thereof in a state that the processing liquid is supplied on the front surface of the substrate.

公开(公告)号：US20200050111A1

公开(公告)日：2020-02-13

申请号：US16656925

申请日：2019-10-18

Applicant: Tokyo Electron Limited

Inventor： Yusaku Hashimoto ,  Takeshi Shimoaoki ,  Masahiro Fukuda ,  Kouichirou Tanaka

IPC: G03F7/30 ,  G03F7/16

Abstract: A method includes forming a liquid puddle of a mixed solution of the diluting liquid and the processing liquid; rotating the substrate at a first rotation speed which allows the mixed solution located at a region facing an inner side than an edge of the liquid contact surface to stay between the liquid contact surface and the surface of the substrate and allows the mixed solution located at a region facing an outer side than the edge of the liquid contact surface to be diffused toward an edge of the substrate; rotating the substrate at a second rotation speed smaller than the first rotation speed after the substrate is rotated at the first rotation speed; and moving the nozzle toward the edge of the substrate while discharging the processing liquid from the discharge hole in a state that the substrate is rotated at the second rotation speed.

公开(公告)号：US10203605B2

公开(公告)日：2019-02-12

申请号：US15444671

申请日：2017-02-28

Applicant: Tokyo Electron Limited

Inventor： Yusaku Hashimoto ,  Takeshi Shimoaoki ,  Masahiro Fukuda ,  Kouichirou Tanaka

IPC: G03F7/32 ,  G03F7/26 ,  B05D1/00 ,  G03F7/30 ,  G03F7/40 ,  H01L21/027 ,  H01L21/67

Abstract: A development method includes: a development step of supplying a developing solution to a surface of a substrate for manufacturing a semiconductor device after undergoing formation of a resist film and exposure, to perform development; a first rotation step of, after the development step, increasing revolution speed of the substrate to rotate the substrate in a first rotational direction around a central axis so as to spin off and remove part of the developing solution from the substrate; and a second rotation step of, after the first rotation step, rotating the substrate in a second rotational direction reverse to the first rotational direction so as to spin off and remove the developing solution remaining on the substrate from the substrate.

公开(公告)号：US10185220B2

公开(公告)日：2019-01-22

申请号：US15262489

申请日：2016-09-12

Applicant: Tokyo Electron Limited

Inventor： Yusaku Hashimoto ,  Takeshi Shimoaoki ,  Masahiro Fukuda ,  Kouichirou Tanaka

IPC: B05C11/08 ,  B05C5/02 ,  B05D1/40 ,  B05D1/26 ,  G03F7/30 ,  B05D1/00 ,  H01L21/67

Abstract: A substrate processing method includes steps of: supplying a developer onto a substrate surface from a discharge port while the substrate is rotated at a first rotation speed and a liquid contact surface faces the surface, and moving the nozzle while the liquid contact surface contacts with the developer so that a liquid film of the developer is formed on the surface; rotating the substrate at a second rotation speed slower than the first rotation speed, after the liquid film is formed, in a state where supply of the developer is stopped; rotating the substrate at a third rotation speed faster than the first rotation speed, after the substrate is rotated at the second rotation speed; and reducing rotation speed of the substrate to the second rotation speed or less, after the substrate is rotated at the third rotation speed, so that the liquid film is held on the surface.

公开(公告)号：US20180157178A1

公开(公告)日：2018-06-07

申请号：US15823847

申请日：2017-11-28

Applicant: Tokyo Electron Limited

Inventor： Yusaku Hashimoto ,  Takeshi Shimoaoki ,  Masahiro Fukuda ,  Kouichirou Tanaka

IPC: G03F7/30 ,  G03F7/16

CPC classification number: G03F7/3021 ,  G03F7/162

Abstract: A controller performs a control to contact, after forming a liquid puddle of a rinse liquid on a surface of a wafer, a liquid contact surface of a nozzle of a developing liquid supply unit with the liquid puddle and to form a liquid puddle of a diluted developing liquid by discharging a developing liquid from the nozzle; a control to rotate the wafer at a first rotation speed which allows the diluted developing liquid inside an edge of the liquid contact surface to stay between the liquid contact surface and the surface and allows the diluted developing liquid outside the edge of the liquid contact surface to be diffused toward an edge of the wafer; and a control to move the nozzle toward the edge of the wafer while rotating the wafer at a second rotation speed smaller than the first rotation speed and discharging the developing liquid.