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1.发明授权公开(公告)号：US09570327B2
公开(公告)日：2017-02-14
申请号：US14651816
申请日：2013-12-12
发明人： Masahiro Fukuda , Akihiro Kubo , Taro Yamamoto , Kenzi Yada , Atsushi Ookouchi
CPC分类号： H01L21/67051 , B08B5/00 , B08B5/02 , B08B5/023 , H01L21/67028 , H01L21/67034
摘要： A substrate liquid treatment apparatus comprises a chuck (13) that holds and rotates a wafer, a back surface purging nozzle (15) that discharges a purge gas toward the back surface of the wafer, and a periphery purging nozzle 16 that discharges the purge gas onto the back surface of the wafer. The back surface purging nozzle has a slit-like opening part extending from a central side to a peripheral side of the substrate in a plan view. Vertical distance between the slit-like opening part and the substrate held by the substrate holding unit increases as approaching an end of the opening part on the central side of the substrate. The periphery purging nozzle discharges the purge gas, toward a central part of the substrate, toward a region on the back surface of the substrate, which region is located radially outside an end of the slit-like opening part of the back surface purging nozzle and radially inside an peripheral edge of the substrate.
摘要翻译： 基板液体处理装置包括：保持和旋转晶片的卡盘（13），向晶片背面排出吹扫气体的后表面清洗喷嘴（15），以及将净化气体排出的周边清洗喷嘴16 到晶片的背面。 后表面清洗喷嘴在平面图中具有从基板的中心侧向周边侧延伸的狭缝状的开口部。 狭缝状开口部与被基板保持单元保持的基板之间的垂直距离随着接近基板的中心侧的开口部的端部而增大。 周边清洗喷嘴将清洗气体朝向基板的中心部朝向基板的背面的区域排出，该区域位于背面清洗喷嘴的狭缝状开口部的端部的径向外侧， 径向地位于衬底的周边边缘内。
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公开(公告)号：US11480881B2
公开(公告)日：2022-10-25
申请号：US17385387
申请日：2021-07-26
IPC分类号： G03F7/16
摘要： A method of processing a substrate includes: performing a first developing process of moving a nozzle having one end surface and a discharge port opened at the end surface while making the end surface come into contact with a developer on a front surface of a substrate in a state in which the nozzle is disposed so that the end surface faces the front surface and the developer is discharged from the discharge port at a first flow rate while rotating the substrate; and after the first developing process, performing a second developing process of discharging the developer from the discharge port at a second flow rate higher than the first flow rate in a state in which the end surface is in contact with the developer on the front surface at a position facing a center of the front surface of the substrate while rotating the substrate.
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3.发明授权公开(公告)号：US09805958B2
公开(公告)日：2017-10-31
申请号：US15598358
申请日：2017-05-18
发明人： Atsushi Ookouchi , Kousuke Yoshihara , Hiroshi Ichinomiya , Hirosi Nisihata , Ryouichirou Naitou
CPC分类号： H01L21/67051
摘要： A cleaning liquid and a gas are discharged in sequence to a central portion of a substrate while the substrate is being rotated, and after nozzles that discharge them are moved to a peripheral edge side of the substrate, discharge of the cleaning liquid is switched to a second cleaning liquid nozzle set at a position deviated from a movement locus of the first cleaning liquid nozzle. Both of the nozzles are moved toward the peripheral edge side of the substrate while discharging the cleaning liquid and discharging the gas so that a difference between a distance from the discharge position of the second cleaning liquid nozzle to the central portion of the substrate and a distance from the discharge position of the gas nozzle to the central portion of the substrate gradually decreases.
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公开(公告)号：US11774854B2
公开(公告)日：2023-10-03
申请号：US17959517
申请日：2022-10-04
IPC分类号： G03F7/16
CPC分类号： G03F7/16
摘要： A method of processing a substrate includes: performing a first developing process of moving a nozzle having one end surface and a discharge port opened at the end surface while making the end surface come into contact with a developer on a front surface of a substrate in a state in which the nozzle is disposed so that the end surface faces the front surface and the developer is discharged from the discharge port at a first flow rate while rotating the substrate; and after the first developing process, performing a second developing process of discharging the developer from the discharge port at a second flow rate higher than the first flow rate in a state in which the end surface is in contact with the developer on the front surface at a position facing a center of the front surface of the substrate while rotating the substrate.
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5.发明授权公开(公告)号：US09704730B2
公开(公告)日：2017-07-11
申请号：US14283331
申请日：2014-05-21
CPC分类号： H01L21/67051
摘要： A cleaning liquid and a gas are discharged in sequence to a central portion of a substrate while the substrate is being rotated, and after nozzles that discharge them are moved to a peripheral edge side of the substrate, discharge of the cleaning liquid is switched to a second cleaning liquid nozzle set at a position deviated from a movement locus of the first cleaning liquid nozzle. Both of the nozzles are moved toward the peripheral edge side of the substrate while discharging the cleaning liquid and discharging the gas so that a difference between a distance from the discharge position of the second cleaning liquid nozzle to the central portion of the substrate and a distance from the discharge position of the gas nozzle to the central portion of the substrate gradually decreases.
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