公开(公告)号：US20190393031A1

公开(公告)日：2019-12-26

申请号：US16555633

申请日：2019-08-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahiro TABATA ,  Toru HISAMATSU

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/683 ,  H01L21/67 ,  H01L21/311 ,  C23C16/50 ,  C23C16/455 ,  C23C16/02 ,  C23C16/56 ,  C23C16/46

Abstract: A substrate processing method includes: providing a substrate in a processing container; selectively forming a first film on a surface of a substrate by plasma enhanced vapor deposition (PECVD); and forming a second film by atomic layer deposition (ALD) in a region of the substrate where the first film does not exist. The second film is formed by repeatedly performing a sequence including: forming a precursor layer on the surface of the substrate; purging an interior of the processing container after forming of the precursor; converting the precursor layer into the second film; and purging a space in the processing container after the converting. A plasma processing apparatus performing the method is also provided.

公开(公告)号：US20190067019A1

公开(公告)日：2019-02-28

申请号：US16111622

申请日：2018-08-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahiro TABATA ,  Toru HISAMATSU ,  Yoshihide KIHARA

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/308 ,  H01L21/683

Abstract: An embodiment of the present disclosure provides a method of processing a workpiece in which a plurality of holes are formed on a surface of the workpiece. The method includes a first sequence including a first process of forming a film with respect to an inner surface of each of the holes and a second process of isotropically etching the film. The first process includes a film forming process using a plasma CVD method, and the film contains silicon.

公开(公告)号：US20220165579A1

公开(公告)日：2022-05-26

申请号：US17669944

申请日：2022-02-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahiro TABATA

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/033

Abstract: A plasma processing method executed by a plasma processing apparatus includes a first step, a second step, and an etching step. In the first step, the plasma processing apparatus forms a first film on a processing target in which a plurality of openings having a predetermined pattern are formed. In the second step, the plasma processing apparatus forms a second film having an etching rate lower than that of the first film on the processing target on which the first film is formed, and having different film thicknesses on the side surfaces of the openings according to the sizes of the openings. In the etching step, the plasma processing apparatus performs etching from above the second film under a predetermined processing condition until a portion of the first film is removed from at least a portion of the processing target.

公开(公告)号：US20200343091A1

公开(公告)日：2020-10-29

申请号：US16925934

申请日：2020-07-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahiro TABATA

IPC: H01L21/033 ,  H01L21/67 ,  H01L21/66 ,  H01L21/683 ,  H01L21/311 ,  H01J37/32 ,  H01L21/02

Abstract: Based on the fact that a film thickness of a film formed in a film formation processing of repeatedly performing a first sequence varies according to a temperature of the surface on which the film is to be formed, the film formation processing is performed after the temperature of each region of the surface of the wafer is adjusted to reduce a deviation of a trench on the surface of the wafer, so that the film is very precisely formed on the inner surface of the trench while reducing the deviation of the trench on the surface of the wafer. When the trench width is narrower than a reference width, an etching processing of repeatedly performing a second sequence is performed in order to expand the trench width, so that the surface of the film provided in the inner surface of the trench is isotropically and uniformly etched.

公开(公告)号：US20200035501A1

公开(公告)日：2020-01-30

申请号：US16521080

申请日：2019-07-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahiro TABATA ,  Sho KUMAKURA

IPC: H01L21/311 ,  H01L21/02

Abstract: A plasma processing method executed by a plasma processing apparatus includes steps of an opening formation, a first film formation, a second film formation, and an etching. In the opening formation, the plasma processing apparatus performs etching on a substrate including a base layer and a first layer formed on the base layer so as to form an opening in the first layer. When determined that the opening satisfies a predetermined condition, in the first film formation, the plasma processing apparatus forms an inhibitor on a bottom surface of the opening so as to form a first film to which a predetermined gas species is not adsorbed. After the formation of the first film, the plasma processing apparatus forms a second film on the side wall of the opening in the second film formation. The plasma processing apparatus also performs etching in the opening in the etching.

公开(公告)号：US20190382897A1

公开(公告)日：2019-12-19

申请号：US16010800

申请日：2018-06-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahiro TABATA

IPC: C23C16/52 ,  C23C16/455 ,  C23C16/56

Abstract: An apparatus for processing a substrate is provided. The apparatus includes a processing apparatus and a controller. The processing apparatus includes a chamber. The controller includes a memory and a processor coupled to the memory. The memory stores computer-executable instructions for controlling the processor to control a process of the processing apparatus. The process includes first forming a first film in a first region of the substrate in the chamber by chemical vapor deposition. The process further includes second forming a second film in a second region of the substrate in the chamber by atomic layer deposition. The first forming and the second forming are performed without moving the substrate out of the chamber.

公开(公告)号：US20190326106A1

公开(公告)日：2019-10-24

申请号：US16390326

申请日：2019-04-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryuichi ASAKO ,  Masahiro TABATA ,  Takao FUNAKUBO

IPC: H01J37/32

Abstract: There is provided a method for etching an organic region of a substrate. In the method, an organic film is formed on a surface in a chamber of a plasma processing apparatus. The surface extends out around a region where the substrate is to be disposed in the chamber of the plasma processing apparatus, and the organic region is etched by chemical species from plasma in the chamber.

公开(公告)号：US20190326104A1

公开(公告)日：2019-10-24

申请号：US16391518

申请日：2019-04-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryuichi ASAKO ,  Masahiro TABATA ,  Takao FUNAKUBO

IPC: H01J37/32 ,  C23C16/44

Abstract: A plasma processing method is performed in a state where a focus ring is disposed on a supporting table to surround an edge of a substrate by a plasma processing apparatus. The plasma processing apparatus includes a chamber and the supporting table provided in the chamber and configured to support the substrate mounted thereon. The plasma processing method includes forming an organic film on the focus ring to reduce a difference between a position of an upper surface of the focus ring in a vertical direction and a reference position, and performing plasma processing on the substrate after the formation of the organic film.

公开(公告)号：US20190067009A1

公开(公告)日：2019-02-28

申请号：US16111789

申请日：2018-08-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahiro TABATA

IPC: H01L21/033 ,  H01L21/67 ,  H01L21/66 ,  H01L21/683 ,  H01L21/311 ,  H01J37/32

Abstract: Based on the fact that a film thickness of a film formed in a film formation processing of repeatedly performing a first sequence varies according to a temperature of the surface on which the film is to be formed, the film formation processing is performed after the temperature of each region of the surface of the wafer is adjusted to reduce a deviation of a trench on the surface of the wafer, so that the film is very precisely formed on the inner surface of the trench while reducing the deviation of the trench on the surface of the wafer. When the trench width is narrower than a reference width, an etching processing of repeatedly performing a second sequence is performed in order to expand the trench width, so that the surface of the film provided in the inner surface of the trench is isotropically and uniformly etched.

公开(公告)号：US20180247827A1

公开(公告)日：2018-08-30

申请号：US15903466

申请日：2018-02-23

Applicant: Tokyo Electron Limited

Inventor： Michiko NAKAYA ,  Masanobu HONDA ,  Toru HISAMATSU ,  Masahiro TABATA

IPC: H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/31116 ,  H01L21/02063 ,  H01L21/02076 ,  H01L21/32138 ,  H01L21/76814

Abstract: A semiconductor manufacturing method includes a first process of etching an insulating film over a conductive layer of an object into a pattern of a mask, and exposing the conductive layer to a recessed portion formed in the insulating film, and a second process of forming an organic film in the recessed portion of the insulating film to which the conductive layer is exposed, the second process including, maintaining a chamber at a predetermined pressure, cooling a stage to −20° C. or less, and placing the object on the stage, supplying a gas including a gas containing a low vapor pressure material to the chamber, and generating plasma from the gas including the gas containing the low vapor pressure material, and causing precursors generated from the low vapor pressure material and included in the plasma to be deposited in the recessed portion such that the organic film is formed.