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公开(公告)号：US20220399212A1
公开(公告)日：2022-12-15
申请号：US17887061
申请日：2022-08-12
发明人： Sho KUMAKURA , Hironari SASAGAWA , Maju TOMURA , Yoshihide KIHARA
IPC分类号： H01L21/67 , H01L21/033 , C23C16/50 , C23C16/46 , C23C16/02 , H01L21/027 , H01L21/311 , H01L21/3065
摘要： A substrate processing method includes (a) forming a recess on a workpiece by partially etching the workpiece; and (b) forming a film having a thickness that differs along a depth direction of the recess, on a side wall of the recess. Step (b) includes (b-1) supplying a first reactant, and causing the first reactant to be adsorbed to the side wall of the recess; and (b-2) supplying a second reactant, and causing the second reactant to react with the first reactant thereby forming a film.
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公开(公告)号：US20200035501A1
公开(公告)日：2020-01-30
申请号：US16521080
申请日：2019-07-24
发明人： Masahiro TABATA , Sho KUMAKURA
IPC分类号： H01L21/311 , H01L21/02
摘要： A plasma processing method executed by a plasma processing apparatus includes steps of an opening formation, a first film formation, a second film formation, and an etching. In the opening formation, the plasma processing apparatus performs etching on a substrate including a base layer and a first layer formed on the base layer so as to form an opening in the first layer. When determined that the opening satisfies a predetermined condition, in the first film formation, the plasma processing apparatus forms an inhibitor on a bottom surface of the opening so as to form a first film to which a predetermined gas species is not adsorbed. After the formation of the first film, the plasma processing apparatus forms a second film on the side wall of the opening in the second film formation. The plasma processing apparatus also performs etching in the opening in the etching.
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公开(公告)号：US20240120187A1
公开(公告)日：2024-04-11
申请号：US18389827
申请日：2023-12-20
发明人： Hironari SASAGAWA , Sho KUMAKURA
IPC分类号： H01J37/32 , H01L21/3065 , H01L21/311
CPC分类号： H01J37/32935 , H01J37/32449 , H01L21/3065 , H01L21/31116 , H01L21/31144 , H01J2237/334
摘要： A plasma processing method includes providing a substrate having a recess is provided in a processing container; generating plasma in the processing container to form a film on the recess; monitoring a state of the plasma generated in the generating; and determining necessity of re-execution of the generating and processing conditions for the re-execution based on the monitored plasma state.
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公开(公告)号：US20240047223A1
公开(公告)日：2024-02-08
申请号：US18485978
申请日：2023-10-12
发明人： Sho KUMAKURA , Kenta ONO , Shinya ISHIKAWA
IPC分类号： H01L21/311 , H01J37/32 , H01L21/3213 , H01L21/308
CPC分类号： H01L21/31144 , H01J37/32449 , H01L21/32139 , H01L21/308 , H01J2237/332
摘要： A substrate processing method according to the present disclosure includes: providing a substrate in a chamber, the substrate having an etching target film and a tin-containing film, the tin-containing film defining at least one opening on the etching target film; and forming a modified film by supplying a processing gas to the chamber to form the modified film on a surface of the tin-containing film, the processing gas including a halogen-containing gas or an oxygen-containing gas.
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公开(公告)号：US20210233778A1
公开(公告)日：2021-07-29
申请号：US17160780
申请日：2021-01-28
发明人： Maju TOMURA , Tomohiko NIIZEKI , Takayuki KATSUNUMA , Hironari SASAGAWA , Yuta NAKANE , Shinya ISHIKAWA , Kenta ONO , Sho KUMAKURA , Yusuke TAKINO , Masanobu HONDA
IPC分类号： H01L21/311 , H01L21/3205 , H01L21/3213
摘要： An etching method includes forming a film on a surface of a substrate having a region to be etched and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The etching method further includes etching the region.
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公开(公告)号：US20200279757A1
公开(公告)日：2020-09-03
申请号：US16804807
申请日：2020-02-28
发明人： Sho KUMAKURA , Hironari SASAGAWA , Maju TOMURA , Yoshihide KIHARA
IPC分类号： H01L21/67 , H01L21/033 , H01L21/027 , C23C16/46 , C23C16/02 , C23C16/50
摘要： A substrate processing method includes (a) forming a recess on a workpiece by partially etching the workpiece; and (b) forming a film having a thickness that differs along a depth direction of the recess, on a side wall of the recess. Step (b) includes (b-1) supplying a first reactant, and causing the first reactant to be adsorbed to the side wall of the recess; and (b-2) supplying a second reactant, and causing the second reactant to react with the first reactant thereby forming a film.
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公开(公告)号：US20200176265A1
公开(公告)日：2020-06-04
申请号：US16564851
申请日：2019-09-09
发明人： Takayuki KATSUNUMA , Toru HISAMATSU , Shinya ISHIKAWA , Yoshihide KIHARA , Masanobu HONDA , Maju TOMURA , Sho KUMAKURA
IPC分类号： H01L21/311 , H01L21/02
摘要： A substrate processing method includes providing a processing target substrate having a pattern, forming a film on the substrate, forming a reaction layer on a surface layer of the substrate by plasma, and removing the reaction layer by applying energy to the substrate.
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公开(公告)号：US20220246440A1
公开(公告)日：2022-08-04
申请号：US17586251
申请日：2022-01-27
发明人： Sho KUMAKURA , Yusuke TAKINO
IPC分类号： H01L21/311 , H01L21/3065 , H01J37/32
摘要： A substrate processing method includes: (a) providing a substrate including an etching target film, a first mask formed on the etching target film, and a second mask formed on the first mask, the second mask being different in film type from the first mask and having an opening; (b) selectively etching the first mask with respect to the second mask, thereby forming an opening in the first mask such that an opening dimension of at least a portion of the first mask is larger than an opening dimension of a bottom of the second mask; and (c) etching the etching target film.
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公开(公告)号：US20220199371A1
公开(公告)日：2022-06-23
申请号：US17557045
申请日：2021-12-21
发明人： Sho KUMAKURA , Yuta NAKANE
摘要： A substrate processing method includes forming a pre-coat film on an in-chamber part disposed in a chamber, and subsequently processing one or more substrates. The forming a pre-coat film includes forming a first film on the in-chamber part without using plasma or by using a first plasma generated under a condition that sputtering is suppressed on the in-chamber part, and forming a second film on a surface of the first film by using a second plasma.
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公开(公告)号：US20210375602A1
公开(公告)日：2021-12-02
申请号：US17330729
申请日：2021-05-26
发明人： Hironari SASAGAWA , Sho KUMAKURA
IPC分类号： H01J37/32 , H01L21/311 , H01L21/3065
摘要： A plasma processing method includes providing a substrate having a recess is provided in a processing container; generating plasma in the processing container to form a film on the recess; monitoring a state of the plasma generated in the generating; and determining necessity of re-execution of the generating and processing conditions for the re-execution based on the monitored plasma state.
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