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公开(公告)号：US20220254635A1
公开(公告)日：2022-08-11
申请号：US17728618
申请日：2022-04-25
Applicant: TOKYO ELECTRON LIMITED
Inventor： Masahiro TABATA
IPC: H01L21/033 , H01L21/67 , H01L21/66 , H01L21/683 , H01L21/311 , H01J37/32 , H01L21/02
Abstract: Based on the fact that a film thickness of a film formed in a film formation processing of repeatedly performing a first sequence varies according to a temperature of the surface on which the film is to be formed, the film formation processing is performed after the temperature of each region of the surface of the wafer is adjusted to reduce a deviation of a trench on the surface of the wafer, so that the film is very precisely formed on the inner surface of the trench while reducing the deviation of the trench on the surface of the wafer. When the trench width is narrower than a reference width, an etching processing of repeatedly performing a second sequence is performed in order to expand the trench width, so that the surface of the film provided in the inner surface of the trench is isotropically and uniformly etched.
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公开(公告)号：US20200035503A1
公开(公告)日：2020-01-30
申请号：US16522933
申请日：2019-07-26
Applicant: TOKYO ELECTRON LIMITED
Inventor： Masahiro TABATA
IPC: H01L21/311 , H01J37/32
Abstract: A plasma processing method executed by a plasma processing apparatus includes a first step, a second step, and an etching step. In the first step, the plasma processing apparatus forms a first film on a processing target in which a plurality of openings having a predetermined pattern are formed. In the second step, the plasma processing apparatus forms a second film having an etching rate lower than that of the first film on the processing target on which the first film is formed, and having different film thicknesses on the side surfaces of the openings according to the sizes of the openings. In the etching step, the plasma processing apparatus performs etching from above the second film under a predetermined processing condition until a portion of the first film is removed from at least a portion of the processing target.
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公开(公告)号：US20190259627A1
公开(公告)日：2019-08-22
申请号：US16347697
申请日：2017-11-02
Applicant: TOKYO ELECTRON LIMITED
Inventor： Masahiro TABATA , Toru HISAMATSU , Yoshihide KIHARA , Masanobu HONDA
IPC: H01L21/311 , H01J37/32
Abstract: In an embodiment, in the method for processing a workpiece including an etching target layer containing silicon oxide, a mask provided on the etching target layer, and an opening provided in the mask and exposing the etching target layer, according to the embodiment, the etching target layer is etched by removing the etching target layer for each atomic layer through repetitive execution of a sequence of generating plasma of a first processing gas containing nitrogen, forming a mixed layer containing ions included in the plasma on an atomic layer on an exposed surface of the etching target layer, generating plasma of a second processing gas containing fluorine, and removing the mixed layer by radicals included in the plasma. The plasma of the second processing gas contains the radicals that remove the mixed layer containing silicon nitride.
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公开(公告)号：US20190378730A1
公开(公告)日：2019-12-12
申请号：US16214870
申请日：2018-12-10
Applicant: TOKYO ELECTRON LIMITED
Inventor： Masahiro TABATA , Toru HISAMATSU
Abstract: A substrate processing method includes: selectively forming a first film on a surface of a substrate disposed in a processing container by plasma enhanced vapor deposition (PECVD); and forming a second film by atomic layer deposition (ALD) in a region of the substrate where the first film does not exist. The second film is formed by repeatedly performing a sequence including: forming a precursor layer on the surface of the substrate; purging an interior of the processing container after forming of the precursor; converting the precursor layer into the second film; and purging a space in the processing container after the converting. A plasma processing apparatus performing the method is also provided.
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公开(公告)号：US20190259626A1
公开(公告)日：2019-08-22
申请号：US16212835
申请日：2018-12-07
Applicant: TOKYO ELECTRON LIMITED
Inventor： Masahiro TABATA , Sho KUMAKURA
IPC: H01L21/311 , H01L21/67 , H01J37/32
Abstract: An etching method selectively etches a first region of a substrate with respect to a second region of the substrate. At least a portion of the first region, which includes the surface of the first region, is modified by plasma to form a first modified region. At least a portion of the second region, which includes the surface of the second region, is modified by plasma to form a second modified region. The first modified region is selectively etched with respect to the second modified region by plasma.
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Patent Agency Ranking
公开(公告)号：US20170011939A1
公开(公告)日：2017-01-12
申请号：US15202356
申请日：2016-07-05
Applicant: TOKYO ELECTRON LIMITED
Inventor： Masahiro TABATA , Takayuki KATSUNUMA , Masanobu HONDA
IPC: H01L21/67 , H01L21/683 , H01L21/311 , H01L21/768
Abstract: A method for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride, includes: preparing a target object including the first region and the second region in a processing chamber of a plasma processing apparatus; and generating a plasma of a processing gas containing a fluorocarbon gas and a rare gas in the processing chamber. In the generating the plasma of the processing gas, a self-bias potential of a lower electrode on which the target object is mounted is greater than or equal to 4V and smaller than or equal to 350V and a flow rate of the rare gas in the processing gas is 250 to 5000 times of a flow rate of the fluorocarbon gas in the processing gas.
Abstract translation: 一种用于相对于第二氮化硅区域选择性蚀刻氧化硅的第一区域的方法包括：在等离子体处理设备的处理室中制备包括第一区域和第二区域的目标物体; 以及在所述处理室中产生含有碳氟化合物气体和稀有气体的处理气体的等离子体。 在产生处理气体的等离子体中，安装目标物体的下电极的自偏压电位大于或等于4V且小于或等于350V，并且稀有气体的流量在 处理气体是处理气体中的碳氟化合物气体的流量的250〜5000倍。
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公开(公告)号：US20210384039A1
公开(公告)日：2021-12-09
申请号：US17409645
申请日：2021-08-23
Applicant: TOKYO ELECTRON LIMITED
Inventor： Takayuki HOSHI , Masanobu HONDA , Masahiro TABATA , Toru HISAMATSU
IPC: H01L21/311
Abstract: An etching method includes a step of selectively forming deposit on a top surface of a mask disposed on a film of a substrate, a step of etching the film after the step of forming the deposit, a step of forming a layer of chemical species included in plasma of a processing gas, on the substrate, and a step of supplying ions from plasma of an inert gas to the substrate so that the chemical species react with the film.
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公开(公告)号：US20210327719A1
公开(公告)日：2021-10-21
申请号：US17362285
申请日：2021-06-29
Applicant: TOKYO ELECTRON LIMITED
Inventor： Masahiro TABATA , Toru HISAMATSU , Yoshihide KIHARA , Masanobu HONDA
IPC: H01L21/311 , H01J37/32 , H01L21/3065 , H05H1/46
Abstract: In an embodiment, in the method for processing a workpiece including an etching target layer containing silicon oxide, a mask provided on the etching target layer, and an opening provided in the mask and exposing the etching target layer, according to the embodiment, the etching target layer is etched by removing the etching target layer for each atomic layer through repetitive execution of a sequence of generating plasma of a first processing gas containing nitrogen, forming a mixed layer containing ions included in the plasma on an atomic layer on an exposed surface of the etching target layer, generating plasma of a second processing gas containing fluorine, and removing the mixed layer by radicals included in the plasma. The plasma of the second processing gas contains the radicals that remove the mixed layer containing silicon nitride.
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公开(公告)号：US20210025060A1
公开(公告)日：2021-01-28
申请号：US17000090
申请日：2020-08-21
Applicant: TOKYO ELECTRON LIMITED
Inventor： Masahiro TABATA
Abstract: An apparatus for processing a substrate is provided. The apparatus includes a processing apparatus and a controller. The processing apparatus includes a chamber. The controller includes a memory and a processor coupled to the memory. The memory stores computer-executable instructions for controlling the processor to control a process of the processing apparatus. The process includes first forming a first film in a first region of the substrate in the chamber by chemical vapor deposition. The process further includes second forming a second film in a second region of the substrate in the chamber by atomic layer deposition. The first forming and the second forming are performed without moving the substrate out of the chamber.
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公开(公告)号：US20200234970A1
公开(公告)日：2020-07-23
申请号：US16746106
申请日：2020-01-17
Applicant: TOKYO ELECTRON LIMITED
Inventor： Takayuki HOSHI , Masanobu HONDA , Masahiro TABATA , Toru HISAMATSU
IPC: H01L21/311
Abstract: An etching method includes a step of selectively forming deposit on a top surface of a mask disposed on a film of a substrate, a step of etching the film after the step of forming the deposit, a step of forming a layer of chemical species included in plasma of a processing gas, on the substrate, and a step of supplying ions from plasma of an inert gas to the substrate so that the chemical species react with the film.
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