公开(公告)号：US07176071B2

公开(公告)日：2007-02-13

申请号：US10982839

申请日：2004-11-08

Applicant: Shinobu Takehiro

Inventor： Shinobu Takehiro

IPC: H01L21/00

CPC classification number: H01L29/66757 ,  H01L29/0649 ,  H01L29/7842 ,  H01L29/7843 ,  H01L29/78603

Abstract: A semiconductor device includes a semiconductor layer formed on part of an insulating layer. The semiconductor layer includes a diffusion region and a channel region. The insulating layer is etched so that the semiconductor layer is separated from the insulating layer below at least part of the diffusion region. The space left below this part of the semiconductor layer is filled by an etch stop film that also covers the side surfaces of the insulating layer. The etch stop film prevents contact holes targeted at the diffusion region from penetrating the insulating layer due to alignment error or defects in the semiconductor layer. Since the etch stop film is not present below the channel region, the electrical characteristics of the semiconductor device are not altered.

Abstract translation: 半导体器件包括形成在绝缘层的一部分上的半导体层。 半导体层包括扩散区和沟道区。 蚀刻绝缘层，使得半导体层与扩散区域的至少一部分下方的绝缘层分离。 留在半导体层的该部分之下的空间由也覆盖绝缘层的侧表面的蚀刻停止膜填充。 蚀刻停止膜防止由于半导体层中的对准误差或缺陷导致扩散区域的接触孔穿透绝缘层。 由于蚀刻停止膜不存在于沟道区下方，因此半导体器件的电特性不会改变。

公开(公告)号：US06936503B2

公开(公告)日：2005-08-30

申请号：US10411098

申请日：2003-04-11

Applicant: Shinobu Takehiro

Inventor： Shinobu Takehiro

IPC: H01L21/28 ,  H01L21/316 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/51 ,  H01L29/78 ,  H01L21/335 ,  H01L21/8232

CPC classification number: H01L21/28185 ,  H01L21/28202 ,  H01L21/823418 ,  H01L21/823462 ,  H01L29/511 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: In a pretreatment process, a silicon oxide film (13) with nitrogen content is formed on a semiconductor substrate (10). In a segregation process executing heat treatment in an in-oxidiz-able gas atmosphere, a silicon nitride layer (14) segregates out at the interface of the silicon substrate (10) and the silicon oxide film (13). After this, the unnecessary silicon oxide film (13) on the silicon nitride layer (14) is removed, and a silicon oxide layer (15) is formed beneath the exposed silicon nitride layer (14) with oxygen passing through the exposed silicon nitride layer (14). Whereby, a gate electrode (16) is formed on the gate insulating film consisting of the silicon nitride layer (14) and the silicon oxide layer (15).

Abstract translation: 在预处理工艺中，在半导体衬底（10）上形成氮含量的氧化硅膜（13）。 在可氧化气体气氛中进行热处理的偏析过程中，氮化硅层（14）在硅衬底（10）和氧化硅膜（13）的界面处析出。 之后，除去氮化硅层（14）上的不需要的氧化硅膜（13），在露出的氮化硅层（14）的下方形成氧化硅层（15），氧气通过暴露的氮化硅层 （14）。 由此，在由氮化硅层（14）和氧化硅层（15）构成的栅极绝缘膜上形成栅电极（16）。

公开(公告)号：US06514813B2

公开(公告)日：2003-02-04

申请号：US09497862

申请日：2000-02-04

Applicant: Shinobu Takehiro

Inventor： Shinobu Takehiro

IPC: H01L218242

CPC classification number: H01L28/40 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/3185

Abstract: A method of fabricating a semiconductor device wherein leakage current of a capacitor is reduced is provided. The method comprises steps of forming a lower electrode the surface of a semiconductor substrate, forming a silicon nitride film over the lower electrode, applying a first heat treatment whereby the silicon nitride film is annealed in an atmosphere containing oxygen, forming a dielectric film containing alkaline earth metals over the silicon nitride film, applying a second heat treatment whereby the electric film is annealed in an atmosphere containing oxygen, and forming an upper electrode on the surface of the dielectric film.

Abstract translation: 提供一种制造半导体器件的方法，其中电容器的漏电流减小。 该方法包括以下步骤：在半导体衬底的表面上形成下电极，在下电极上形成氮化硅膜，进行第一热处理，由此使氮化硅膜在含氧气氛中退火，形成含碱性的电介质膜 在氮化硅膜上施加第二热处理，使电膜在含氧气氛中进行退火，在电介质膜的表面形成上部电极。

公开(公告)号：US06403441B1

公开(公告)日：2002-06-11

申请号：US09291306

申请日：1999-04-15

Applicant: Shinobu Takehiro ,  Masaki Yoshimaru

Inventor： Shinobu Takehiro ,  Masaki Yoshimaru

IPC: H01L2120

CPC classification number: H01L28/56 ,  H01L28/60

Abstract: A method for manufacturing a semiconductor device by laminating a plurality of ruthenium-type conductive electrodes and a dielectric film having a perovskite structure, includes forming a first conductive electrode at the semiconductor substrate, forming a first area where elements constituting the first conductive electrodes and elements constituting a first dielectric film are melded, forming a transitional layer by performing a heat treatment on the first meld area within a non-oxidizing atmosphere and forming the first dielectric film on the first conductive electrode. Accordingly, a transitional layer having a consistent composition can be formed with a high degree of efficiency at the interface of the ruthenium-type electrode and the dielectric substance having a perovskite structure, so that a capacitor structure employing a very thin dielectric film having a high dielectric constant can be produced with ease and at low cost.

Abstract translation: 一种通过层叠多个钌型导电电极和具有钙钛矿结构的电介质膜来制造半导体器件的方法，包括在半导体衬底处形成第一导电电极，形成构成第一导电电极和元件的元件的第一区域 构成第一电介质膜，通过对非氧化性气氛中的第一熔融区域进行热处理，在第一导电电极上形成第一电介质膜，形成过渡层。 因此，可以在钌型电极和具有钙钛矿结构的电介质的界面处以高效率形成具有一致组成的过渡层，从而使用具有高电位的非常薄的电介质膜的电容器结构 可以容易且低成本地制造介电常数。