公开(公告)号：US20050224337A1

公开(公告)日：2005-10-13

申请号：US11092911

申请日：2005-03-30

申请人： Masahide Iwasaki ,  Tomoaki Ukei

发明人： Masahide Iwasaki ,  Tomoaki Ukei

IPC分类号： H05H1/16 ,  C23C14/32 ,  C23C16/509 ,  H01J37/32 ,  H01L21/00 ,  H01L21/205 ,  H01L21/3065 ,  H05H1/46

CPC分类号： H01J37/32623 ,  H01J37/3266

摘要： A plasma processing apparatus includes a worktable in a process chamber to horizontally place a target substrate thereon. A plasma generation space is defined above and around the worktable within the process chamber. The plasma generation space includes a peripheral plasma region and a main plasma region respectively located outside and inside an outer edge of the target substrate placed on the worktable. The apparatus further includes a magnetic field forming mechanism configured to form a magnetic field within the peripheral plasma region. The magnetic field includes magnetic force lines extending through the peripheral plasma region between a start position and an end position, at least one of which is located radially inside a sidewall of the process chamber.

摘要翻译： 等离子体处理装置包括处理室中的工作台，以在其上水平放置目标基板。 在处理室内的工作台上方和周围限定了等离子体产生空间。 等离子体产生空间包括分别位于放置在工作台上的目标基板的外边缘的外侧和内侧的外围等离子体区域和主等离子体区域。 该装置还包括被配置为在外围等离子体区域内形成磁场的磁场形成机构。 磁场包括在起始位置和终止位置之间延伸穿过周边等离子体区域的磁力线，其中至少一个位于处理室侧壁的径向内侧。

公开(公告)号：US07789962B2

公开(公告)日：2010-09-07

申请号：US11393866

申请日：2006-03-31

申请人： Masahide Iwasaki

发明人： Masahide Iwasaki

IPC分类号： C23C16/00

CPC分类号： G05D23/1902 ,  H01J37/32724 ,  H01L21/67109 ,  H01L21/67248

摘要： A device for controlling a temperature of a mounting table for mounting thereon a target object includes a first and a second coolant passageway provided at the mounting table, a coolant circulator for circulating a coolant in the first and the second coolant passageway, channels, a coolant temperature controller for raising or lowering the temperature of the coolant, a channel switching unit for connecting, blocking and changing the channels among a first to a fourth port; and a channel controller. Various modes for controlling a temperature of the mounting table can be obtained by combining an ON/OFF state of the heating operation in the coolant temperature controller with ON/OFF states of opening/closing valves in the channel switching unit under the control of the channel controller.

摘要翻译： 用于控制用于安装目标物体的安装台的温度的装置包括设置在安装台处的第一和第二冷却剂通道，用于使第一和第二冷却剂通道中的冷却剂循环的冷却剂循环器，通道，冷却剂 用于升高或降低冷却剂的温度的温度控制器，用于在第一至第四端口之间连接，阻塞和改变通道的通道切换单元; 和通道控制器。 用于控制安装台的温度的各种模式可以通过将冷却剂温度控制器中的加热操作的ON / OFF状态与在通道的控制下的通道切换单元中的开/关状态的ON / OFF状态相结合来获得 控制器。

公开(公告)号：US20060219360A1

公开(公告)日：2006-10-05

申请号：US11393866

申请日：2006-03-31

申请人： Masahide Iwasaki

发明人： Masahide Iwasaki

IPC分类号： C23F1/00

CPC分类号： G05D23/1902 ,  H01J37/32724 ,  H01L21/67109 ,  H01L21/67248

摘要： A device for controlling a temperature of a mounting table for mounting thereon a target object includes a first and a second coolant passageway provided at the mounting table, a coolant circulator for circulating a coolant in the first and the second coolant passageway, channels, a coolant temperature controller for raising or lowering the temperature of the coolant, a channel switching unit for connecting, blocking and changing the channels among a first to a fourth port; and a channel controller. Various modes for controlling a temperature of the mounting table can be obtained by combining an ON/OFF state of the heating operation in the coolant temperature controller with ON/OFF states of opening/closing valves in the channel switching unit under the control of the channel controller.

摘要翻译： 用于控制用于安装目标物体的安装台的温度的装置包括设置在安装台处的第一和第二冷却剂通道，用于使第一和第二冷却剂通道中的冷却剂循环的冷却剂循环器，通道，冷却剂 用于升高或降低冷却剂的温度的温度控制器，用于在第一至第四端口之间连接，阻塞和改变通道的通道切换单元; 和通道控制器。 用于控制安装台的温度的各种模式可以通过将冷却剂温度控制器中的加热操作的ON / OFF状态与在通道的控制下的通道切换单元中的开/关状态的ON / OFF状态相结合来获得 控制器。

公开(公告)号：US06367429B2

公开(公告)日：2002-04-09

申请号：US09760726

申请日：2001-01-17

申请人： Masahide Iwasaki ,  Kazuhiko Asada

发明人： Masahide Iwasaki ,  Kazuhiko Asada

IPC分类号： F07C902

CPC分类号： F28D15/02 ,  F17C7/04 ,  F17C2205/018 ,  F17C2221/011 ,  F17C2221/014 ,  F17C2221/033 ,  F17C2223/0161 ,  F17C2223/033 ,  F17C2225/0123 ,  F17C2227/0318 ,  F17C2227/0323 ,  F17C2227/0393 ,  F17C2265/05 ,  F28D2021/0064

摘要： An intermediate fluid type vaporizer is provided which employs a heat source fluid capable of providing a relatively large temperature difference utilizable for vaporization, and which can make an overall size of the vaporizer more compact. The intermediate fluid type vaporizer comprises an intermediate fluid evaporator constructed by providing heat source tubes in a shell, which contains an intermediate fluid therein, to evaporate the intermediate fluid of liquid phase with heat exchange between the heat source fluid and the liquid intermediate fluid, and a liquefied gas evaporator constructed by providing heat transfer tubes in the shell to evaporate liquefied gas with heat exchange between the liquefied gas and the evaporated intermediate fluid. The heat source tubes are formed by straight tubes arranged so as to constitute two or more passes.

摘要翻译： 提供一种中间流体型蒸发器，其使用能够提供可用于蒸发的相对较大温差的热源流体，并且其可以使蒸发器的整体尺寸更紧凑。 中间流体型蒸发器包括中间流体蒸发器，该中间流体蒸发器通过在外壳中提供热源管，其中包含中间流体，以在热源流体和液体中间流体之间的热交换来蒸发液相的中间流体;以及 一种液化气体蒸发器，其通过在壳体内提供换热管以通过液化气体和蒸发的中间流体之间的热交换来蒸发液化气体而构成。 热源管由设置成构成两次以上通过的直管形成。

公开(公告)号：US20110126765A1

公开(公告)日：2011-06-02

申请号：US12951380

申请日：2010-11-22

申请人： Yohei Yamazawa ,  Naoki Matsumoto ,  Masahide Iwasaki ,  Naohiko Okunishi

发明人： Yohei Yamazawa ,  Naoki Matsumoto ,  Masahide Iwasaki ,  Naohiko Okunishi

IPC分类号： C23C16/513

CPC分类号： H01J37/32174 ,  H01J37/32091 ,  H01J37/32522 ,  H05H1/46

摘要： A parallel resonance frequency can be adjusted in order to stably and securely block different high frequency noises flowing into a line such as a power feed line or a signal line from electric members including a high frequency electrode within a processing chamber. A filter 102(1) coaxially accommodates a coil 104(1) within a cylindrical outer conductor 110, and a ring member 122 is coaxially installed between the coil 104(1) and the outer conductor 110. The ring-shaped member 122 may be a plate body of a circular ring shape on a plane orthogonal to an axial direction of the outer conductor 110 and made of a conductor such as cupper or aluminum and electrically connected with the outer conductor 110 while electrically insulated from the coil 104(1).

摘要翻译： 可以调节并联谐振频率，以便稳定且可靠地阻止流入来自包括处理室内的高频电极的电气部件的馈电线或信号线的线路的不同高频噪声。 过滤器102（1）在圆柱形外导体110内同轴地容纳线圈104（1），并且环形构件122同轴地安装在线圈104（1）和外导体110之间。环形构件122可以是 在与外导体110的轴向正交的平面上并且由诸如铜或铝的导体制成并且与外导体110电连接并且与线圈104（1）电绝缘的平板体。

公开(公告)号：US20110068087A1

公开(公告)日：2011-03-24

申请号：US12951904

申请日：2010-11-22

申请人： Masahide Iwasaki ,  Tomoaki Ukei

发明人： Masahide Iwasaki ,  Tomoaki Ukei

IPC分类号： H01L21/3065 ,  H01L21/306

CPC分类号： H01J37/32623 ,  H01J37/3266

摘要： A plasma processing apparatus includes a worktable in a process chamber to horizontally place a target substrate thereon. A plasma generation space is defined above and around the worktable within the process chamber. The plasma generation space includes a peripheral plasma region and a main plasma region respectively located outside and inside an outer edge of the target substrate placed on the worktable. The apparatus further includes a magnetic field forming mechanism configured to form a magnetic field within the peripheral plasma region. The magnetic field includes magnetic force lines extending through the peripheral plasma region between a start position and an end position, at least one of which is located radially inside a sidewall of the process chamber.

摘要翻译： 等离子体处理装置包括处理室中的工作台，以在其上水平放置目标基板。 在处理室内的工作台上方和周围限定了等离子体产生空间。 等离子体产生空间包括分别位于放置在工作台上的目标基板的外边缘的外侧和内侧的外围等离子体区域和主等离子体区域。 该装置还包括被配置为在外围等离子体区域内形成磁场的磁场形成机构。 磁场包括在起始位置和终止位置之间延伸穿过周边等离子体区域的磁力线，其中至少一个位于处理室的侧壁的径向内侧。

公开(公告)号：US07846293B2

公开(公告)日：2010-12-07

申请号：US11092911

申请日：2005-03-30

申请人： Masahide Iwasaki ,  Tomoaki Ukei

发明人： Masahide Iwasaki ,  Tomoaki Ukei

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01J37/32623 ,  H01J37/3266

摘要： A plasma processing apparatus includes a worktable in a process chamber to horizontally place a target substrate thereon. A plasma generation space is defined above and around the worktable within the process chamber. The plasma generation space includes a peripheral plasma region and a main plasma region respectively located outside and inside an outer edge of the target substrate placed on the worktable. The apparatus further includes a magnetic field forming mechanism configured to form a magnetic field within the peripheral plasma region. The magnetic field includes magnetic force lines extending through the peripheral plasma region between a start position and an end position, at least one of which is located radially inside a sidewall of the process chamber.

摘要翻译： 等离子体处理装置包括处理室中的工作台，以在其上水平放置目标基板。 在处理室内的工作台上方和周围限定了等离子体产生空间。 等离子体产生空间包括分别位于放置在工作台上的目标基板的外边缘的外侧和内侧的外围等离子体区域和主等离子体区域。 该装置还包括被配置为在外围等离子体区域内形成磁场的磁场形成机构。 磁场包括在起始位置和终止位置之间延伸穿过周边等离子体区域的磁力线，其中至少一个位于处理室的侧壁的径向内侧。

公开(公告)号：US20140174660A1

公开(公告)日：2014-06-26

申请号：US14127286

申请日：2012-06-29

申请人： Masahide Iwasaki

发明人： Masahide Iwasaki

IPC分类号： H01J37/32

CPC分类号： H01J37/32201 ,  H01J37/32211 ,  H01J37/3222

摘要： The microwave plasma processing apparatus includes a power feeding rod that applies high frequency wave for RF bias, the upper end of which is connected to a susceptor, and the lower end of which is connected to a high frequency output terminal of a matcher in a matching unit; a cylindrical external conductor that encloses around the power feeding rod serving as an internal conductor; and a coaxial line. The coaxial line is installed with a choke mechanism configured to block undesired microwave that enters the line from a plasma producing space in a chamber, and leakage of the microwave to an RF feeding line is prevented in the middle of the line, thereby suppressing the microwave leakage.

摘要翻译： 微波等离子体处理装置包括供电棒，该供电棒对RF偏压施加高频波，其上端连接到基座，下端连接到匹配器的高频输出端，匹配 单元; 围绕用作内部导体的供电杆的圆柱形外部导体; 和同轴线。 同轴线安装有扼流器机构，其构造成阻挡从腔室中的等离子体产生空间进入管线的不期望的微波，并且在线路中部防止微波到RF馈线的泄漏，从而抑制微波 泄漏。

公开(公告)号：US08628640B2

公开(公告)日：2014-01-14

申请号：US10775145

申请日：2004-02-11

申请人： Toshihiro Hayami ,  Masahide Iwasaki ,  Junichi Takahira ,  Kazuyoshi Watanabe ,  Shinichi Komatsu ,  Yuichi Sasaki

发明人： Toshihiro Hayami ,  Masahide Iwasaki ,  Junichi Takahira ,  Kazuyoshi Watanabe ,  Shinichi Komatsu ,  Yuichi Sasaki

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32174 ,  H01J37/32082

摘要： A plasma processing unit of the present invention includes a processing container whose inner pressure can be reduced, a first electrode arranged in the processing container, a process gas supplying unit that supplies a process gas into the processing container, a high-frequency electric power source that outputs high-frequency electric power having a frequency in a VHF band, a matching unit electrically connected to the high-frequency electric power source and the first electrode for impedance matching, and a transmission line that transmits the high-frequency electric power from the high-frequency electric power source to the matching unit. A substrate to be processed is adapted to be arranged in the processing container. The high-frequency electric power transmitted to the first electrode is adapted to generate plasma in such a manner that the substrate to be processed can undergo a plasma process by means of the plasma. The transmission line has a length shorter than a length wherein a resonance state of a third harmonic wave of the high-frequency electric power may be generated.

摘要翻译： 本发明的等离子体处理单元包括能够减小其内部压力的处理容器，设置在处理容器中的第一电极，将处理气体供给到处理容器中的处理气体供给单元，高频电力源 其输出具有VHF频带的频率的高频电力，与高频电源电连接的匹配单元和用于阻抗匹配的第一电极，以及从高频电力发送高频电力的传输线 高频电源到匹配单元。 待处理的基板适于布置在处理容器中。 传输到第一电极的高频电力适于产生等离子体，使得待处理的衬底能够通过等离子体进行等离子体处理。 传输线的长度短于可以产生高频电力的三次谐波的共振状态的长度。

公开(公告)号：US08262848B2

公开(公告)日：2012-09-11

申请号：US12951904

申请日：2010-11-22

申请人： Masahide Iwasaki ,  Tomoaki Ukei

发明人： Masahide Iwasaki ,  Tomoaki Ukei

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01J37/32623 ,  H01J37/3266

摘要： A plasma processing apparatus includes a worktable in a process chamber to horizontally place a target substrate thereon. A plasma generation space is defined above and around the worktable within the process chamber. The plasma generation space includes a peripheral plasma region and a main plasma region respectively located outside and inside an outer edge of the target substrate placed on the worktable. The apparatus further includes a magnetic field forming mechanism configured to form a magnetic field within the peripheral plasma region. The magnetic field includes magnetic force lines extending through the peripheral plasma region between a start position and an end position, at least one of which is located radially inside a sidewall of the process chamber.

摘要翻译： 等离子体处理装置包括处理室中的工作台，以在其上水平放置目标基板。 在处理室内的工作台上方和周围限定了等离子体产生空间。 等离子体产生空间包括分别位于放置在工作台上的目标基板的外边缘的外侧和内侧的外围等离子体区域和主等离子体区域。 该装置还包括被配置为在外围等离子体区域内形成磁场的磁场形成机构。 磁场包括在起始位置和终止位置之间延伸穿过周边等离子体区域的磁力线，其中至少一个位于处理室的侧壁的径向内侧。