公开(公告)号：US20060246636A1

公开(公告)日：2006-11-02

申请号：US11477376

申请日：2006-06-30

申请人： Keitaro Imai ,  Toru Takayama ,  Yuugo Goto ,  Junya Maruyama ,  Yumiko Ohno

发明人： Keitaro Imai ,  Toru Takayama ,  Yuugo Goto ,  Junya Maruyama ,  Yumiko Ohno

IPC分类号： H01L21/84 ,  H01L21/30 ,  H01L21/00 ,  H01L21/46

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78675 ,  H01L2221/6835 ,  H01L2221/68368

摘要： To provide a method for manufacturing a semiconductor device including a transfer step that is capable of controlling the adhesiveness of a substrate and an element-formed layer in the case of separating the element-formed layer including a semiconductor element or an integrated circuit formed over the substrate from the substrate and bonding it to another substrate. An adhesive agent made of a good adhesiveness material is formed between the semiconductor element or the integrated circuit comprising plural semiconductor elements formed over the substrate (a first substrate) and the substrate, and thus it is possible to prevent a semiconductor element from peeling off a substrate in manufacturing the semiconductor element, and further, to make it easier to separate the semiconductor element from the substrate by removing the adhesive agent after forming the semiconductor element.

公开(公告)号：US20060228838A1

公开(公告)日：2006-10-12

申请号：US11451071

申请日：2006-06-12

申请人： Keitaro Imai

发明人： Keitaro Imai

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： G02F1/136286 ,  G02F2001/136295 ,  H01L27/1292

摘要： Conventionally, photolithography and anisotropic etching are performed to form a plug between an electrode and a wiring, etc., thereby increasing the number of steps, getting the throughput worse, and producing unnecessary materials. To solve the problems, the present invention provides a method for manufacturing a display device, including the formation steps of a conductive layer or wirings, and a contact plug that can treat a larger substrate. In the case of forming a plug for electrically connecting conductive patterns comprising plural layers, a pillar made of a conductor is formed over a base conductive layer pattern, and then, after an insulating film is formed over the entire surface, the insulating film is etched back to expose the conductor pillar, and a conductive pattern in an upper layer is formed by ink jetting. In this case, when the conductor pillar is processed, a resist to be a mask can be formed in itself by ink jetting.

摘要翻译： 通常，进行光刻和各向异性蚀刻以在电极和布线等之间形成插塞，从而增加步骤数量，使吞吐量更差并且产生不必要的材料。 为了解决这些问题，本发明提供一种显示装置的制造方法，其包括导电层或布线的形成步骤以及可处理较大基板的接触塞。 在形成用于电连接包括多层的导电图案的插头的情况下，在基底导电层图案上形成由导体制成的柱，然后在整个表面上形成绝缘膜之后，蚀刻绝缘膜 背面露出导体柱，并且通过喷墨形成上层中的导电图案。 在这种情况下，当处理导体柱时，可以通过喷墨形成本身作为掩模的抗蚀剂。

公开(公告)号：US20050245023A1

公开(公告)日：2005-11-03

申请号：US11177281

申请日：2005-07-11

申请人： Osamu Arisumi ,  Keitaro Imai ,  Koji Yamakawa ,  Bum-ki Moon

发明人： Osamu Arisumi ,  Keitaro Imai ,  Koji Yamakawa ,  Bum-ki Moon

IPC分类号： H01L21/02 ,  H01L21/8234

CPC分类号： H01L28/56 ,  H01L28/55

摘要： A semiconductor device comprises a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode and made of a perovskite type ferroelectrics containing Pb, Zr, Ti and O, the dielectric film comprising a first portion formed of a plurality of crystal grains partitioned by grain boundaries having a plurality of directions.

摘要翻译： 半导体器件包括底电极，顶电极和设置在底电极和顶电极之间并由包含Pb，Zr，Ti和O的钙钛矿型铁电体制成的电介质膜，该电介质膜包括由第一部分形成的第一部分 由具有多个方向的晶界划分的多个晶粒。

公开(公告)号：US20050014319A1

公开(公告)日：2005-01-20

申请号：US10885636

申请日：2004-07-08

申请人： Shunpei Yamazaki ,  Keitaro Imai ,  Shinji Maekawa ,  Makoto Furuno ,  Osamu Nakamura

发明人： Shunpei Yamazaki ,  Keitaro Imai ,  Shinji Maekawa ,  Makoto Furuno ,  Osamu Nakamura

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/423 ,  H01L21/00 ,  H01L21/8234

CPC分类号： H01L27/12 ,  H01L27/1292 ,  H01L29/42384 ,  H01L29/66765

摘要： An object of the present invention is to provide a method for manufacturing a semiconductor device of which manufacturing process is simplified by improving usage rate of a material. A method for manufacturing a semiconductor device of the invention comprises the steps of: forming gate electrodes with a droplet discharge method on a substrate having an insulating surface; laminating gate insulating layers, semiconductor layers, and a semiconductor layer containing one-conductivity type impurity over the gate electrodes; forming first conductive layers serving as masks with a droplet discharge method in a position overlapping the gate electrodes, etching the semiconductor layer and the semiconductor layer containing one-conductivity type impurity with the first conductive layers, forming a second conductive layer serving as a source wiring or a drain wiring with a droplet discharge method over the first conductive layers; and etching the first conductive layers and the semiconductor layer containing one-conductivity type impurity, using the second conductive layers as masks.

摘要翻译： 本发明的目的是提供一种通过提高材料的使用率来简化制造工艺的半导体器件的制造方法。 本发明的半导体器件的制造方法包括以下步骤：在具有绝缘表面的基板上形成具有液滴喷射法的栅电极; 在栅电极上层叠栅绝缘层，半导体层和含有一导电型杂质的半导体层; 在与栅电极重叠的位置处形成用作液滴喷射法的掩模的第一导电层，用第一导电层蚀刻半导体层和含有一导电型杂质的半导体层，形成用作源极布线的第二导电层 或在第一导电层上具有液滴喷射方法的漏极布线; 并且使用第二导电层作为掩模来蚀刻第一导电层和含有一种导电型杂质的半导体层。

公开(公告)号：US06268299B1

公开(公告)日：2001-07-31

申请号：US09668988

申请日：2000-09-25

申请人： Rajarao Jammy ,  Johnathan E. Faltermeier ,  Keitaro Imai ,  Ryota Katsumata ,  Jean-Marc Rousseau ,  Viraj Y. Sardesai ,  Joseph F. Shepard, Jr.

发明人： Rajarao Jammy ,  Johnathan E. Faltermeier ,  Keitaro Imai ,  Ryota Katsumata ,  Jean-Marc Rousseau ,  Viraj Y. Sardesai ,  Joseph F. Shepard, Jr.

IPC分类号： H01L21318

CPC分类号： C23C14/0652 ,  H01L21/3185

摘要： A low-temperature process for forming a highly conformal barrier film during integrated circuit manufacture by low pressure chemical vapor deposition (LPCVD). The process includes the following steps. First, the process provides ammonia and a silicon-containing gas selected from the group consisting of silane, dichlorosilane, bistertiarybutylaminosilanc, hexachlorodisilane, and mixtures of those compositions. The ratio of the volume of ammonia to the volume of the silicon-containing gas is adjusted to yield silicon concentrations greater than 43 atomic percent in the resultant film. The process applies a deposition temperature of 550° C. to 720° C. The ammonia and the silicon-containing gas are reacted at the deposition temperature to form a silicon-rich nitride film less than 200 Å thick. Finally, the silicon nitride film is deposited by low pressure chemical vapor deposition.

摘要翻译： 在低压化学气相沉积（LPCVD）的集成电路制造过程中形成高保形阻挡膜的低温工艺。 该过程包括以下步骤。 首先，该方法提供氨和含硅气体，其选自硅烷，二氯硅烷，二丁基氨基硅烷，六氯二硅烷，以及这些组合物的混合物。 调节氨体积与含硅气体体积的比例，得到所得膜中硅浓度大于43原子百分比。 该方法将沉积温度为550℃至720℃。氨和含硅气体在沉积温度下反应，形成厚度小于200埃的富硅氮化物膜。 最后，通过低压化学气相沉积沉积氮化硅膜。

公开(公告)号：US07732262B2

公开(公告)日：2010-06-08

申请号：US11477376

申请日：2006-06-30

申请人： Keitaro Imai ,  Toru Takayama ,  Yuugo Goto ,  Junya Maruyama ,  Yumiko Ohno

发明人： Keitaro Imai ,  Toru Takayama ,  Yuugo Goto ,  Junya Maruyama ,  Yumiko Ohno

IPC分类号： H01L21/46

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78675 ,  H01L2221/6835 ,  H01L2221/68368

摘要： To provide a method for manufacturing a semiconductor device including a transfer step that is capable of controlling the adhesiveness of a substrate and an element-formed layer in the case of separating the element-formed layer including a semiconductor element or an integrated circuit formed over the substrate from the substrate and bonding it to another substrate. An adhesive agent made of a good adhesiveness material is formed between the semiconductor element or the integrated circuit comprising plural semiconductor elements formed over the substrate (a first substrate) and the substrate, and thus it is possible to prevent a semiconductor element from peeling off a substrate in manufacturing the semiconductor element, and further, to make it easier to separate the semiconductor element from the substrate by removing the adhesive agent after forming the semiconductor element.

摘要翻译： 为了提供一种制造半导体器件的方法，该半导体器件包括转印步骤，该转印步骤能够在分离包含半导体元件或在其上形成的集成电路的元件形成层的情况下控制衬底和元件形成层的粘附性 衬底并将其粘合到另一衬底上。 在半导体元件或包括形成在基板（第一基板）和基板之上的多个半导体元件的集成电路之间）形成由良好的粘合性材料制成的粘合剂，因此可以防止半导体元件剥离 制造半导体元件的基板，并且通过在形成半导体元件之后去除粘合剂，使得更容易将半导体元件与基板分离。

公开(公告)号：US07709843B2

公开(公告)日：2010-05-04

申请号：US10574880

申请日：2004-10-25

申请人： Shunpei Yamazaki ,  Shinji Maekawa ,  Makoto Furuno ,  Osamu Nakamura ,  Keitaro Imai

发明人： Shunpei Yamazaki ,  Shinji Maekawa ,  Makoto Furuno ,  Osamu Nakamura ,  Keitaro Imai

IPC分类号： H01L29/786

CPC分类号： H01L27/12 ,  H01L27/1292 ,  H01L27/3276 ,  H01L29/66757 ,  H01L29/66765 ,  H01L51/56

摘要： According to the present invention, which is a display device in which a light-emitting element where an organic substance generating luminescence referred to as electroluminescence or a medium including a mixture of an organic substance and an inorganic substance is sandwiched between electrodes is connected to a TFT, the invention is to manufacture a display panel by forming at least one or more of a conductive layer which forms a wiring or an electrode and a pattern necessary for manufacturing a display panel such as a mask layer for forming a predetermined pattern is formed by a method capable of selectively forming a pattern. A droplet discharge method capable of forming a predetermined pattern by selectively discharging a droplet of a composition in accordance with a particular object and by forming a conductive layer or an insulating layer is used as a method capable of selectively forming a pattern.

摘要翻译： 根据本发明，其中将发出被称为电致发光的有机物质的发光元件或包含有机物和无机物的混合物的介质夹在电极之间的发光元件连接到 TFT，本发明通过形成至少一个或多个形成布线或电极的导电层以及用于制造用于形成预定图案的掩模层等显示面板所需的图案来制造显示面板，由 能够选择性地形成图案的方法。 使用能够通过选择性地排出根据特定目的的组合物的液滴并且通过形成导电层或绝缘层来形成预定图案的液滴喷射方法作为能够选择性地形成图案的方法。

公开(公告)号：US20070046178A1

公开(公告)日：2007-03-01

申请号：US10569528

申请日：2004-08-25

申请人： Keitaro Imai ,  Aya Anzai ,  Yasuko Watanabe

发明人： Keitaro Imai ,  Aya Anzai ,  Yasuko Watanabe

IPC分类号： H01J1/62

CPC分类号： H01L27/3276 ,  H01L23/564 ,  H01L27/1222 ,  H01L27/3258 ,  H01L51/0005 ,  H01L51/5246 ,  H01L2924/0002 ,  H01L2924/00

摘要： It is an object of the present invention to provide a display device preventing the external invasion of water and/or oxygen and preventing the deterioration of a luminous element due to these invading substances and to provide a production method including simple production steps for producing the display device. The invention provides a display device having a sealing material on the rim of an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Further, the invention provides a display device having a barrier body on an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Furthermore, the application of droplet discharge technique in production steps for producing the display device can eliminate a photolithography step such as exposing and developing. Thus, a method of producing a display device having an improved yield is provided.

摘要翻译： 本发明的目的是提供一种防止水和/或氧的外部侵入并防止由于这些侵入物质引起的发光元件劣化的显示装置，并且提供一种制造方法，其包括用于制造显示器的简单制造步骤 设备。 本发明提供了一种在暴露的层间绝缘体的边缘上具有密封材料的显示装置，用于防止来自层间绝缘体的水和/或氧的侵入。 此外，本发明提供一种在暴露的层间绝缘体上具有阻挡体的显示装置，用于防止水和/或氧从层间绝缘体的侵入。 此外，在生产显示装置的制造步骤中应用液滴放电技术可以消除诸如曝光和显影的光刻步骤。 因此，提供了一种生产具有提高的产量的显示装置的方法。

公开(公告)号：US07132790B2

公开(公告)日：2006-11-07

申请号：US11137515

申请日：2005-05-26

申请人： Satoshi Seo ,  Keitaro Imai

发明人： Satoshi Seo ,  Keitaro Imai

IPC分类号： H05B33/00

CPC分类号： H01L51/5092 ,  H01L27/3244 ,  Y10S428/917

摘要： Provided is a means for improving the capability of injecting electrons from a cathode in a luminous element and solving problems about the production process thereof. In the present invention, a material having a smaller work function than a cathode material is used to form an inorganic conductive layer between the cathode and an organic compound layer. In this way, the capability of injecting electrons from the cathode can be improved. Furthermore, the film thereof can be thicker than that of a conventional cathode buffer layer formed by using an insulating material. Therefore, the film thickness can easily be controlled, and a decrease in production costs and an improvement in yield can be achieved.

摘要翻译： 提供了用于提高从发光元件中的阴极注入电子的能力的手段，并且解决了关于其制造方法的问题。 在本发明中，使用具有比正极材料功函数小的材料在阴极和有机化合物层之间形成无机导电层。 以这种方式，可以提高从阴极注入电子的能力。 此外，其膜可以比通过使用绝缘材料形成的常规阴极缓冲层的膜厚。 因此，可以容易地控制膜厚度，并且可以实现生产成本的降低和产率的提高。

公开(公告)号：US07105400B2

公开(公告)日：2006-09-12

申请号：US10673262

申请日：2003-09-30

申请人： Keitaro Imai ,  Koji Yamakawa ,  Hiroshi Itokawa ,  Katsuaki Natori ,  Osamu Arisumi ,  Keisuke Nakazawa ,  Bum-ki Moon

发明人： Keitaro Imai ,  Koji Yamakawa ,  Hiroshi Itokawa ,  Katsuaki Natori ,  Osamu Arisumi ,  Keisuke Nakazawa ,  Bum-ki Moon

IPC分类号： H01L21/8234 ,  H01L21/8244 ,  H01L21/336

CPC分类号： H01L27/11502 ,  H01L27/11507

摘要： There is disclosed a method of manufacturing a semiconductor device, comprising forming an underlying region including an interlevel insulating film on a semiconductor substrate, forming an alumina film on the underlying region, forming a hole in the alumina film, filling the hole with a bottom electrode film, forming a dielectric film on the bottom electrode film, and forming a top electrode film on the dielectric film.

摘要翻译： 公开了一种制造半导体器件的方法，包括在半导体衬底上形成包括层间绝缘膜的下面的区域，在下面的区域上形成氧化铝膜，在氧化铝膜上形成孔，用底部电极填充孔 膜，在底部电极膜上形成电介质膜，并在电介质膜上形成顶部电极膜。