利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

211 条记录 (耗时 0.024 秒)

    Shift register and semiconductor display device
    1.
    发明授权
    Shift register and semiconductor display device 有权
    移位寄存器和半导体显示器件

    公开(公告)号：US08664976B2

    公开(公告)日：2014-03-04

    申请号：US13248420

    申请日：2011-09-29

    申请人： Mitsuaki Osame ,  Aya Anzai

    发明人： Mitsuaki Osame ,  Aya Anzai

    IPC分类号： G09G3/36 ,  G11C19/00 ,  G06F7/38

    CPC分类号： G09G3/3677 ,  G09G3/3266 ,  G09G3/3275 ,  G09G3/3688 ,  G11C19/00 ,  G11C19/28

    摘要： The invention provides a shift register which can operate normally while suppressing a delay of signal and a rounding of waveform. The shift register of the invention includes a plurality of stages of flip-flop circuits each of which includes a clocked inverter. The clocked inverter includes a first transistor and a second transistor which are connected in series, a first compensation circuit including a third transistor and a fourth transistor which are connected in series, and a second compensation circuit including a fifth transistor and a transmission gate. According to the first compensation circuit, a timing at which a signal outputted from the flip-flop circuit rises or falls can be controlled in synchronization with an output of two stages before. The second compensation circuit can control a clock signal input can be controlled.

    摘要翻译： 本发明提供了一种能够在抑制信号延迟和波形舍入的同时正常工作的移位寄存器。 本发明的移位寄存器包括多个级的触发器电路，每个触发器电路包括时钟反相器。 时钟反相器包括串联连接的第一晶体管和第二晶体管，包括串联连接的第三晶体管和第四晶体管的第一补偿电路和包括第五晶体管和透射栅的第二补偿电路。 根据第一补偿电路，可以与前两级的输出同步地控制从触发器电路输出的信号上升或下降的定时。 第二补偿电路可以控制时钟信号输入可以控制。

    Semiconductor device
    2.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08624258B2

    公开(公告)日：2014-01-07

    申请号：US13223582

    申请日：2011-09-01

    申请人： Shunpei Yamazaki ,  Masahiko Hayakawa ,  Yoshifumi Tanada ,  Mitsuaki Osame ,  Aya Anzai ,  Ryota Fukumoto

    发明人： Shunpei Yamazaki ,  Masahiko Hayakawa ,  Yoshifumi Tanada ,  Mitsuaki Osame ,  Aya Anzai ,  Ryota Fukumoto

    IPC分类号： H01L27/14 ,  G09G3/30

    CPC分类号： H01L27/3262 ,  G09G3/3233 ,  G09G2310/0251 ,  G09G2330/04 ,  H01L27/0248 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78675

    摘要： Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

    摘要翻译： 半导体元件由于静电放电损坏而劣化或被破坏。 本发明提供一种其中在每个像素中形成保护装置的半导体器件。 保护装置设置有从由电阻元件，电容器元件和整流元件组成的组中选择的一个或多个元件。 通过在发光元件的像素电极和源电极之间设置保护装置，可以减轻由于在像素电极中积聚的电荷导致的晶体管的源电极或漏电极的电位的突然变化，或 晶体管的漏极。 因此防止了由于静电放电损坏导致的半导体元件的劣化或破坏。

    Light emitting device and driving method of the same
    3.
    发明授权
    Light emitting device and driving method of the same 有权
    发光装置及其驱动方法

    公开(公告)号：US08497822B2

    公开(公告)日：2013-07-30

    申请号：US12873507

    申请日：2010-09-01

    申请人： Hisashi Ohtani ,  Yoshifumi Tanada ,  Aya Anzai

    发明人： Hisashi Ohtani ,  Yoshifumi Tanada ,  Aya Anzai

    IPC分类号： G09G3/30

    CPC分类号： H01L27/3209 ,  G09G3/2022 ,  G09G3/2025 ,  G09G2300/0452 ,  G09G2300/0465 ,  G09G2300/0842 ,  G09G2310/0235 ,  G09G2320/043 ,  G09G2330/02 ,  H01L27/3244 ,  H01L2251/562

    摘要： The invention provides a light emitting device which can suppress the reduction of luminance in accordance with the light emission time and light emission at a high luminance. Moreover, the invention relates to a driving method which can suppress the reduction of luminance in accordance with the light emission time and light emission at a high luminance. The light emitting device of the invention can display a plurality of colors of which brightness and chromaticity are different by visually mixing light emission of a plurality of light emitting elements of which light emission colors are different. When a visually mixed display color is formed, a white light emission is exhibited.

    摘要翻译： 本发明提供一种可以根据发光时间和高亮度的发光抑制亮度的降低的发光装置。 此外，本发明涉及一种驱动方法，其可以根据发光时间和高亮度的发光来抑制亮度的降低。 本发明的发光装置可以通过视觉上混合发光颜色不同的多个发光元件的发光来显示亮度和色度不同的多种颜色。 当形成视觉上混合的显示颜色时，表现出白色发光。

    Method of driving light-emitting device
    6.
    发明授权
    Method of driving light-emitting device 有权
    驱动发光装置的方法

    公开(公告)号：US08274458B2

    公开(公告)日：2012-09-25

    申请号：US11656909

    申请日：2007-01-22

    申请人： Mitsuaki Osame ,  Aya Anzai ,  Yu Yamazaki ,  Tomoyuki Iwabuchi

    发明人： Mitsuaki Osame ,  Aya Anzai ,  Yu Yamazaki ,  Tomoyuki Iwabuchi

    IPC分类号： G09G3/32

    CPC分类号： G09G3/2007 ,  G09G2320/043

    摘要： Degradations in light emitting elements occur with the passage of time. A method of driving a light-emitting device is characterized by including the steps of: supplying a light-emitting element with the current in response to an analog video signal during a sustaining period; and turning switch off thereby to make the light-emitting element nonluminous or making first and the second electrodes identical in potential thereby to make the light-emitting element nonluminous during an off time period.

    摘要翻译： 随着时间的推移，发光元件的退化发生。 驱动发光装置的方法的特征在于包括以下步骤：在维持期间响应于模拟视频信号向发光元件供应电流; 并关闭开关，从而使发光元件不发光或使第一电极和第二电极的电位相同，从而使发光元件在关闭时间段期间不发光。

    Data latch circuit and electronic device
    7.
    发明授权
    Data latch circuit and electronic device 有权
    数据锁存电路和电子设备

    公开(公告)号：US08212600B2

    公开(公告)日：2012-07-03

    申请号：US13213483

    申请日：2011-08-19

    申请人： Mitsuaki Osame ,  Aya Anzai

    发明人： Mitsuaki Osame ,  Aya Anzai

    IPC分类号： H03K3/12

    CPC分类号： H03K5/249 ,  G09G3/20 ,  G09G3/3225 ,  G09G3/3291 ,  G09G3/3648 ,  G09G2300/08 ,  G09G2310/027 ,  G09G2310/0289 ,  G09G2310/0294 ,  G09G2320/0233 ,  G11C19/184 ,  H03K3/356121

    摘要： The data latch circuit of the invention includes a means for short-circuiting an input terminal and an output terminal of an inverter and by connecting the input terminal to one electrode of a capacitor and sampling a data signal or a reference potential to the other electrode of the capacitor, an accurate operation can be obtained without being influenced by variations in the TFT characteristics even when the amplitude of an input signal is small relatively to the width of a power supply voltage.

    摘要翻译： 本发明的数据锁存电路包括用于使逆变器的输入端子和输出端子短路的装置，并且将输入端子连接到电容器的一个电极，并将数据信号或参考电位采样到另一个电极的另一个电极 即使当输入信号的幅度相对于电源电压的宽度较小时，也可以不受TFT特性的变化的影响而获得精确的操作。

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08188945B2

    公开(公告)日：2012-05-29

    申请号：US12506465

    申请日：2009-07-21

    申请人： Shunpei Yamazaki ,  Masahiko Hayakawa ,  Yoshifumi Tanada ,  Mitsuaki Osame ,  Aya Anzai ,  Ryota Fukumoto

    发明人： Shunpei Yamazaki ,  Masahiko Hayakawa ,  Yoshifumi Tanada ,  Mitsuaki Osame ,  Aya Anzai ,  Ryota Fukumoto

    IPC分类号： G09G3/30 ,  G09G3/10

    CPC分类号： H01L27/3262 ,  G09G3/3233 ,  G09G2310/0251 ,  G09G2330/04 ,  H01L27/0248 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78675

    摘要： Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

    摘要翻译： 半导体元件由于静电放电损坏而劣化或被破坏。 本发明提供一种其中在每个像素中形成保护装置的半导体器件。 保护装置设置有从由电阻元件，电容器元件和整流元件组成的组中选择的一个或多个元件。 通过在发光元件的像素电极和源电极之间设置保护装置，可以减轻由于在像素电极中积聚的电荷导致的晶体管的源电极或漏电极的电位的突然变化，或 晶体管的漏极。 因此防止了由于静电放电损坏导致的半导体元件的劣化或破坏。

    Light-emitting device including thin film transistor
    9.
    发明授权
    Light-emitting device including thin film transistor 有权
    包括薄膜晶体管的发光器件

    公开(公告)号：US08154015B2

    公开(公告)日：2012-04-10

    申请号：US12758862

    申请日：2010-04-13

    申请人： Makoto Udagawa ,  Masahiko Hayakawa ,  Jun Koyama ,  Mitsuaki Osame ,  Aya Anzai

    发明人： Makoto Udagawa ,  Masahiko Hayakawa ,  Jun Koyama ,  Mitsuaki Osame ,  Aya Anzai

    IPC分类号： H01L51/56

    CPC分类号： H01L27/3262 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/3276 ,  H01L29/78675 ,  H01L29/78696 ,  H01L51/52

    摘要： The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.

    摘要翻译： 本发明提供了一种具有特定长度的TFT的沟道长度，特别是比现有TFT长的几十到几百倍，特别是在栅极电压下变为导通状态 高于现有的和驾驶，并允许具有低通道电导gd。 根据本发明，不仅可以减小导通电流的简单分散，而且可以降低其归一化色散，并且除了各个TFT之间的色散的降低之外，OLED本身的分散和由于 可以降低OLED的劣化。

    SEMICONDUCTOR DEVICE
    10.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20110309368A1

    公开(公告)日：2011-12-22

    申请号：US13223582

    申请日：2011-09-01

    申请人： Shunpei YAMAZAKI ,  Masahiko HAYAKAWA ,  Yoshifumi TANADA ,  Mitsuaki OSAME ,  Aya ANZAI ,  Ryota FUKUMOTO

    发明人： Shunpei YAMAZAKI ,  Masahiko HAYAKAWA ,  Yoshifumi TANADA ,  Mitsuaki OSAME ,  Aya ANZAI ,  Ryota FUKUMOTO

    IPC分类号： H01L33/08

    CPC分类号： H01L27/3262 ,  G09G3/3233 ,  G09G2310/0251 ,  G09G2330/04 ,  H01L27/0248 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78675

    摘要： Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

    摘要翻译： 半导体元件由于静电放电损坏而劣化或被破坏。 本发明提供一种其中在每个像素中形成保护装置的半导体器件。 保护装置设置有从由电阻元件，电容器元件和整流元件组成的组中选择的一个或多个元件。 通过在发光元件的像素电极和源电极之间设置保护装置，可以减轻由于在像素电极中积聚的电荷导致的晶体管的源电极或漏电极的电位的突然变化，或 晶体管的漏极。 因此防止了由于静电放电损坏导致的半导体元件的劣化或破坏。