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11.发明申请Unevenness elimination end-point detecting apparatus and unevenness elimination end-point detecting method for CMP apparatus 审中-公开CMP装置的不均匀性消除终点检测装置和不均匀性消除终点检测方法公开(公告)号：US20080180695A1
公开(公告)日：2008-07-31
申请号：US11986944
申请日：2007-11-27
CPC分类号： B24B37/013 , B24B49/12 , G01B11/306
摘要： An unevenness elimination end-point detection apparatus for a CMP apparatus which polishes a film to be polished formed on a wafer surface includes: light irradiation means for irradiating a light on a polishing surface of the wafer during polishing of the wafer; photoelectric conversion means for converting a light intensity of a reflected light from the polishing surface into an electric signal to output the electric signal as a light intensity signal; and determination means for determining an elimination end-point of the initial unevenness of the wafer on the basis of the light intensity signal output from the photoelectric conversion means. The irradiated light is white light and the white light is split and input to the photoelectric conversion means, and light intensity signals are output in units of wavelengths of split lights. In this manner, an elimination end-point of the initial unevenness can be optically detected during wafer polishing.
摘要翻译： 用于抛光形成在晶片表面上的待抛光膜的CMP装置的不均匀性消除终点检测装置包括：在晶片抛光期间将光照射在晶片的抛光表面上的光照射装置; 光电转换装置，用于将来自抛光表面的反射光的光强度转换为电信号，以输出电信号作为光强度信号; 以及确定装置，用于基于从光电转换装置输出的光强度信号确定晶片的初始不均匀性的消除终点。 被照射的光是白光，白光被分离并输入到光电转换装置，并且以分光的波长为单位输出光强度信号。 以这种方式，可以在晶片抛光期间光学地检测初始不均匀性的消除终点。
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公开(公告)号：US08228623B2
公开(公告)日：2012-07-24
申请号：US13117175
申请日：2011-05-27
CPC分类号： G03B3/10 , G02B7/28 , G03B13/34 , H04N5/23212
摘要： In order to obtain stable lens positions to have an object imaged in focus when the temperature of lenses changes, an imaging device of the present invention comprises a system control section 60 having a imaging mode and a correction mode, the imaging mode in which a group of lenses 10 are controlled and moved to focusing positions for a predetermined distance at first and are further moved to correct the focusing positions for the predetermined distance to the object during imaging according to the temperature compensation data, the correction mode in which the group of lenses 10 are controlled and moved to have the temperature compensation data corrected when the temperature change is larger than or equal to a predetermined temperature difference, a correction coefficient calculation section 50 for calculating the correction coefficient to correct the temperature compensation data based on first focusing positions of the group of lenses to which the group of lenses are moved according to the temperature compensation data before corrected and second focusing positions of the group of the lenses to which the group of the lenses are automatically moved from the first focusing positions to have the object the predetermined distance away imaged in focus based on the focus evaluation value under a condition under which a moving range of the group of lenses is restricted, when the system control section is on the correction mode, a temperature compensation data correction section 51 for correcting the temperature compensation data to be used for the imaging mode based on the correction coefficient calculated by the correction coefficient calculation section.
摘要翻译： 为了获得稳定的透镜位置以使透镜的温度变化时成像为对象，本发明的成像装置包括具有成像模式和校正模式的系统控制部60，其中，组 透镜10被控制并首先移动到聚焦位置预定距离，并且根据温度补偿数据进一步移动以在成像期间将对焦位置校正到物体预定距离，该组透镜 10被控制并移动以使温度补偿数据在温度变化大于或等于预定温度差时被校正;校正系数计算部分50，用于基于第一聚焦位置计算修正系数以校正温度补偿数据; 一组透镜组合的镜片组合 根据该组透镜的校正和第二聚焦位置之间的温度补偿数据自动地从第一聚焦位置移动，以使物体的预定距离远离成像焦点的焦点评估值 在该组透镜的移动范围被限制的条件下，当系统控制部分处于校正模式时，温度补偿数据校正部分51用于校正要用于成像模式的温度补偿数据，该温度补偿数据基于 由校正系数计算部计算出的校正系数。
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公开(公告)号：US07830141B2
公开(公告)日：2010-11-09
申请号：US12319403
申请日：2009-01-07
申请人： Takashi Fujita , Toshiyuki Yokoyama , Keita Kitade
发明人： Takashi Fujita , Toshiyuki Yokoyama , Keita Kitade
CPC分类号： G01B7/105
摘要： Coil is made to be disposed with gap opposed to the surface of wafer, and wafer stage is made to move in X and Y direction and R and θ direction. When supplying an alternating current to coil with the frequency swept by impedance analyzer, the magnetic field made to be induced in coil will operate on the conductive film of wafer. By changing a parameter (a frequency or an angle) influencing the skin effect of the conductive film and giving the parameter to coil, the state where a magnetic field is not made to penetrate relatively the film of wafer and the state where the magnetic field is made to penetrate relatively the film can be formed. From the variation of various values corresponding to the eddy current induced based on the change of state influenced by the skin effect of the conductive film, the film thickness of wafer can be measured with sufficient accuracy.
摘要翻译： 将线圈设置成与晶片表面相对的间隙，并且使晶片台在X和Y方向上移动，并且R和＆ 方向。 当用阻抗分析仪扫描的频率向线圈提供交流电时，在线圈中感应的磁场将在晶片的导电膜上工作。 通过改变影响导电膜的皮肤效应并给出线圈参数的参数（频率或角度），没有使磁场相对于晶片的膜渗透的状态和磁场为 可以形成相对渗透的薄膜。 根据由导电膜的皮肤效应影响的状态变化引起的涡电流对应的各种值的变化，可以以足够的精度测量晶片的膜厚度。
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14.发明授权Method and device for forecasting/detecting polishing end point and method and device for monitoring real-time film thickness 失效用于预测/检测抛光终点的方法和装置以及用于监控实时胶片厚度的方法和装置公开(公告)号：US07821257B2
公开(公告)日：2010-10-26
申请号：US12228945
申请日：2008-08-18
申请人： Takashi Fujita , Toshiyuki Yokoyama , Keita Kitade
发明人： Takashi Fujita , Toshiyuki Yokoyama , Keita Kitade
CPC分类号： B24B37/013
摘要： A method and device for forecasting/detecting a polishing end point and for monitoring a real-time film thickness to suppress Joule heat loss due to the eddy current to the minimum, to precisely forecast/detect a polishing end point, to precisely calculate the remaining film thickness to be removed, and polishing rate. An inductor 36 in a sensor is arranged adjacent to a predetermined conductive film 28, and a magnetic flux change induced in the conductive film 28 by a magnetic flux formed by the inductor 36 is monitored, and by use of a magnetic flux change when a film thickness becomes corresponding to skin depth in which a film thickness in polishing is determined by the material of the predetermined conductive film 28 as a factor, a magnetic flux change part to forecast a polishing end point in the magnetic flux change process is detected, and a polishing end point is forecasted from the magnetic flux change part, and a polishing rate and a remaining film thickness amount to be removed are calculated on the spot.
摘要翻译： 一种用于预测/检测抛光终点并用于监测实时膜厚度以将由于涡流引起的焦耳热损失抑制到最小以精确地预测/检测抛光终点的方法和装置，以精确地计算剩余的 要去除的膜厚度和抛光速率。 传感器中的电感器36布置成与预定的导电膜28相邻，并且通过由电感器36形成的磁通量在导电膜28中感应的磁通量变化被监测，并且通过使用磁通量改变膜 厚度对应于其中通过预定导电膜28的材料确定抛光中的膜厚度的皮肤深度，检测用于预测磁通量变化过程中的抛光终点的磁通量变化部分，并且 从磁通量变化部分预测抛光终点，并且现场计算抛光速率和待除去的剩余膜厚度量。
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15.发明申请Polishing condition control apparatus and polishing condition control method of CMP apparatus 审中-公开抛光条件控制装置和CMP装置的抛光条件控制方法公开(公告)号：US20080268751A1
公开(公告)日：2008-10-30
申请号：US12082366
申请日：2008-04-10
IPC分类号： B24B49/02
CPC分类号： B24B37/005 , B24B49/12 , B24B51/00
摘要： To eliminate the unevenness of the remaining film thickness of the wafers, and increase the polishing efficiency, reduce the running cost and enhance the yield. A CMP apparatus 1 is equipped with a polishing recipe preparing means 3 that prepares polishing conditions so that the polishing conditions such as polishing speed, polishing pressure, abrasive and the like for the wafers become optimal, a remaining film thickness forecasting means 4 that forecasts the remaining film thickness of the wafer to be polished under the polishing conditions after polishing, a remaining film thickness measuring apparatus 4 that measures the remaining film thickness of the wafer after the polishing, and a computer 6 that controls the polishing conditions on the basis of the measurement results of the remaining film thickness. Further, the computer 6 includes a calculating unit 11 that calculate the difference between the measured value of the remaining film thickness and the forecasted value thereof, and a polishing condition correcting/changing unit 13 that corrects/changes the polishing conditions so that the calculated difference becomes minimal, and thereby, the correction/change of the polishing conditions is carried out in real time.
摘要翻译： 为了消除晶片的剩余膜厚度的不均匀性，提高研磨效率，降低运行成本，提高成品率。 CMP装置1配备有抛光配方准备装置3，其准备抛光条件，使得用于晶片的抛光速度，抛光压力，研磨剂等的抛光条件变得最佳;剩余膜厚度预测装置4，其预测 在研磨后的抛光条件下待研磨晶片的剩余膜厚度，测量抛光后晶片剩余膜厚度的剩余膜厚度测量装置4以及基于该抛光条件控制抛光条件的计算机6 剩余膜厚的测量结果。 此外，计算机6包括：计算剩余膜厚度的测量值与其预测值之间的差的计算单元11以及修正/改变抛光条件的抛光条件校正/改变单元13，使得计算出的差值 变得最小，从而实时地进行抛光条件的校正/变更。
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16.发明申请公开(公告)号：US20080118597A1
公开(公告)日：2008-05-22
申请号：US12007454
申请日：2008-01-10
IPC分类号： B29C51/36
CPC分类号： B65D3/12 , B29C51/04 , B29C51/10 , B29C51/343 , B29C51/36 , B29C51/40 , B29C2791/001 , B29C2791/006 , B29C2791/007 , B29L2031/7132 , B65D1/26 , B65D1/42
摘要： The present invention provides a bottomed cylindrical container, comprising a body wall, a bottom wall, and a ring-shaped foot downwardly extending from the bottom wall, said container being produced by thermo-molding a resin sheet, characterized in that said foot is formed by folding an inner wall by compressed fluid to be fusion-bonded with an outer wall, so as to form the foot comprising the inner wall and the outer wall. The present invention also provides a bottomed cylindrical container, comprising a body wall having a grounding edge at a lower end thereof, and a bottom wall, said container being produced by thermo-molding a resin sheet, characterized in that said bottom wall connects with an upper edge of an inner wall produced by folding back the body wall along the grounding edge and by fusion-bonding it to an inner periphery of the body wall. In addition, the present invention provides the methods for thermo-molding these containers and their apparatuses.
摘要翻译： 本发明提供一种有底的圆柱形容器，其包括体壁，底壁和从底壁向下延伸的环形脚，所述容器通过热塑树脂板制成，其特征在于，所述脚形成 通过用压缩流体折叠内壁以与外壁熔合，从而形成包括内壁和外壁的脚。 本发明还提供了一种有底圆柱形容器，其包括在其下端具有接地边缘的主体壁和底壁，所述容器通过热塑树脂板制造，其特征在于，所述底壁与 通过沿着接地边缘折叠主体壁并通过将其熔合到体壁的内周而产生的内壁的上边缘。 此外，本发明提供了这些容器及其装置的热成型方法。
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17.发明授权公开(公告)号：US07795865B2
公开(公告)日：2010-09-14
申请号：US11975195
申请日：2007-10-18
申请人： Takashi Fujita , Toshiyuki Yokoyama , Keita Kitade
发明人： Takashi Fujita , Toshiyuki Yokoyama , Keita Kitade
CPC分类号： H01L22/26 , B24B37/013 , B24B49/04 , B24B49/105 , H01L21/3212 , H01L2924/0002 , H01L2924/00
摘要： A method and device for forecasting and detecting a polishing endpoint and real time film thickness monitoring capable of suppressing to a minimum Joule heat loss due to an eddy current, and precisely forecasting and detecting the polishing endpoint, and precisely calculating a remaining film amount to be removed and a polishing rate. A high frequency inductor sensor is positioned close to the conductive film, and monitors a flux change induced in the conductive film. When a film thickness becomes a film thickness corresponding to a skin depth of the conductive film a method of calculating on the spot a polishing rate and a remaining film amount to be removed is provided.
摘要翻译： 一种用于预测和检测抛光终点和实时膜厚监测的方法和装置，其能够抑制由于涡流引起的最小焦耳热损失，并精确地预测和检测抛光终点，并精确计算剩余膜量 去除和抛光速率。 高频电感传感器位于靠近导电膜的位置，并监测导电膜中的磁通变化。 当膜厚成为与导电膜的皮肤深度相对应的膜厚时，提供了一种在现场计算抛光速率和待除去剩余膜量的方法。
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18.发明申请公开(公告)号：US20080290865A1
公开(公告)日：2008-11-27
申请号：US11975195
申请日：2007-10-18
申请人： Takashi Fujita , Toshiyuki Yokoyama , Keita Kitade
发明人： Takashi Fujita , Toshiyuki Yokoyama , Keita Kitade
IPC分类号： G01B7/06
CPC分类号： H01L22/26 , B24B37/013 , B24B49/04 , B24B49/105 , H01L21/3212 , H01L2924/0002 , H01L2924/00
摘要： An object of the present invention is to provide a method of forecasting and detecting a polishing endpoint and the device thereof and a real time film thickness monitoring method and the device thereof capable of suppressing a Joule heat loss to the minimum due to an eddy current, and precisely forecasting and detecting the polishing endpoint, and moreover, precisely calculating a remaining film amount to be removed and a polishing rate and the like on the spot so as to be able to accurately evaluate whether the predetermined conductive film is appropriately removed.To achieve the above described object, the present invention brings an inductor in a high frequency inductor type sensor close to the predetermined conductive film, and monitors a flux change induced in the predetermined conductive film by the flux formed by the inductor 36, and based on a flux change when a film thickness during the polishing becomes a film thickness corresponding to a skin depth decided with the material of the predetermined conductive film as a factor, detects a film thickness reference point, and forecasts the polishing endpoint from this film thickness reference point, and provides a method of calculating on the spot a polishing rate and a remaining film amount to be removed.
摘要翻译： 本发明的目的是提供一种预测和检测抛光终点及其装置的方法及其实时膜厚监测方法及其能够由于涡电流而将焦耳热损失抑制到最小的装置， 精确地预测和检测抛光终点，并且还准确地计算待去除的剩余膜量和现场抛光速率等，以便能够准确地评估预定导电膜是否被适当地去除。 为了实现上述目的，本发明使电感器在靠近预定导电膜的高频电感器型传感器中带动，并且通过由电感器36形成的磁通来监测在预定导电膜中感应的磁通量变化，并且基于 当抛光期间的膜厚度变为与由预定导电膜的材料确定的皮肤深度相对应的皮肤深度的膜厚度时的通量变化，检测膜厚度参考点，并且从该膜厚参考点预测抛光终点 ，并且提供一种现场计算要除去的抛光速率和剩余膜量的方法。
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公开(公告)号：US20080242197A1
公开(公告)日：2008-10-02
申请号：US12008350
申请日：2008-01-10
申请人： Takashi Fujita , Toshiyuki Yokoyama , Keita Kitade
发明人： Takashi Fujita , Toshiyuki Yokoyama , Keita Kitade
IPC分类号： B24B49/00
摘要： The present invention aims to provide a wafer polish monitoring method and device for detecting the end point of the polishing of a conductive film with high precision and accuracy by monitoring the variation of the film thickness of the conductive film without adverse influence of slurry or the like after the film thickness of the conductive film decreases to an extremely small film thickness defined by the skin depth. To achieve this objective, the present invention provides a wafer polish monitoring method by which a high-frequency transmission path is formed in a portion facing the conductive film on the surface of the wafer, the polishing removal state of the conductive film is evaluated based at least on the transmitted electromagnetic waves passing through the high-frequency transmission path or the reflected electromagnetic waves that are reflected without passing through the high-frequency transmission path, and the end point of the polishing removal and the point equivalent to the end point of the polishing removal are detected.
摘要翻译： 本发明的目的在于提供一种晶片抛光剂监测方法和装置，其通过监测导电膜的膜厚变化而不受浆料等的不利影响，高精度和高精度地检测导电膜的抛光终点 在导电膜的膜厚度降低到由皮肤深度限定的非常小的膜厚度之后。 为了达到上述目的，本发明提供了一种在晶片表面上与导电膜相对的部分形成高频传输路径的晶片抛光监视方法，基于 对穿过高频传输路径的透射电磁波或反射的电磁波至少不经过高频传输路径，抛光去除的终点和等同于 检测到抛光去除。
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公开(公告)号：US07148503B2
公开(公告)日：2006-12-12
申请号：US09968898
申请日：2001-10-03
CPC分类号： H01L23/5382 , G06F15/7867 , G06F17/5045 , H01L23/544 , H01L2223/5444 , H01L2223/54473 , H01L2924/0002 , H01L2924/15192 , H01L2924/3011 , Y02D10/12 , Y02D10/13 , H01L2924/00
摘要： The present invention provides a semiconductor device, in which a plurality of chip IPs are mounted onto a common semiconductor circuit board, an evaluation method for the same, and a function setting method for the same. Various IP groups can be mounted as chip IPs onto a silicon circuit board. The silicon circuit board includes a silicon substrate, a wiring layer and pads. IPs (chip IPs) are mounted onto the pads by lamination. Means for selecting, switching and setting the functions of the IPs are provided, making the semiconductor device suitable for small-variety mass-production.
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