公开(公告)号：US08456066B2

公开(公告)日：2013-06-04

申请号：US12792860

申请日：2010-06-03

申请人： Toshikatsu Kashiwaya ,  Yuya Kikuta ,  Tomohiko Hibino

发明人： Toshikatsu Kashiwaya ,  Yuya Kikuta ,  Tomohiko Hibino

IPC分类号： H01L41/187

CPC分类号： C04B35/493 ,  C04B35/62685 ,  C04B2235/3251 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3281 ,  C04B2235/3294 ,  C04B2235/36 ,  C04B2235/6025 ,  C04B2235/768 ,  C04B2235/79 ,  H01L41/083 ,  H01L41/0913 ,  H01L41/1876 ,  H01L41/273

摘要： There is provided a piezoelectric/electrostrictive element having little decease of Qm even in a high electric field in the case of a piezoelectric element. The piezoelectric/electrostrictive body is characterized in that the rate of Qm in an electric field of 10 V/mm is 30% or more with respect to Qm in an electric field of 1 V/mm.

摘要翻译： 在压电元件的情况下，即使在高电场中也提供了几乎不具有Qm的Qm的压电/电致伸缩元件。 压电/电致伸缩体的特征在于，在10V / mm的电场中，Qm相对于1m / mm的电场中的Qm为30％以上。

公开(公告)号：US20050194868A1

公开(公告)日：2005-09-08

申请号：US11064070

申请日：2005-02-23

申请人： Toshikatsu Kashiwaya ,  Yukihisa Takeuchi ,  Yuya Kikuta

发明人： Toshikatsu Kashiwaya ,  Yukihisa Takeuchi ,  Yuya Kikuta

IPC分类号： C04B35/49 ,  C04B35/491 ,  C04B35/493 ,  H01L41/09 ,  H01L41/187

CPC分类号： H01L41/0973 ,  C04B35/491 ,  C04B2235/3224 ,  C04B2235/3232 ,  C04B2235/3234 ,  C04B2235/3249 ,  C04B2235/3251 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3296 ,  C04B2235/3409 ,  C04B2235/36 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/549 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/96 ,  H01L41/1876

摘要： There is provided a piezoelectric/electrostrictive porcelain composition capable of manufacturing, even at a comparatively low firing temperature, a piezoelectric/electrostrictive ceramic or a piezoelectric/electrostrictive portion which is dense and superior in crystallinity and which has superior piezoelectric/electrostrictive characteristic and durability even under high temperature and high humidity conditions. The piezoelectric/electrostrictive porcelain composition comprises: a piezoelectric/electrostrictive component containing lead titanate zirconate; and 0.5 to 5% by mass of glass component containing 8% by mass or less of silicic acid.

摘要翻译： 提供了即使在相对低的烧制温度下制造致密且结晶性优异的压电/电致伸缩陶瓷或压电/电致伸缩部分的压电/电致伸缩瓷组合物，甚至具有优异的压电/电致伸缩特性和耐久性 在高温高湿条件下。 压电/电致伸缩瓷组合物包括：包含锆钛酸铅的压电/电致伸缩组分; 和0.5〜5质量％的含有8质量％以下的硅酸的玻璃成分。

公开(公告)号：US07309949B2

公开(公告)日：2007-12-18

申请号：US11064070

申请日：2005-02-23

申请人： Toshikatsu Kashiwaya ,  Yukihisa Takeuchi ,  Yuya Kikuta

发明人： Toshikatsu Kashiwaya ,  Yukihisa Takeuchi ,  Yuya Kikuta

IPC分类号： H01L41/187

CPC分类号： H01L41/0973 ,  C04B35/491 ,  C04B2235/3224 ,  C04B2235/3232 ,  C04B2235/3234 ,  C04B2235/3249 ,  C04B2235/3251 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3296 ,  C04B2235/3409 ,  C04B2235/36 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/549 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/96 ,  H01L41/1876

摘要： A piezoelectric/electrostrictive porcelain composition capable of being manufactured at a comparatively low firing temperature is provided, as well as a piezoelectric/electrostrictive ceramic or a piezoelectric/electrostrictive portion which is dense and superior in crystallinity and which has superior piezoelectric/electrostrictive characteristics and durability even under high temperature and high humidity conditions. The piezoelectric/electrostrictive porcelain composition includes a piezoelectric/electrostrictive component containing lead titanate zirconate, and 0.5 to 5% by mass of glass component containing 8% by mass or less of silicic acid.

摘要翻译： 提供了能够在相对低的烧制温度下制造的压电/电致伸缩瓷组合物，以及致密且结晶度优异并且具有优异的压电/电致伸缩特性和耐久性的压电/电致伸缩陶瓷或压电/电致伸缩部分 即使在高温高湿条件下也可。 压电/电致伸缩瓷组合物包括含钛酸锆酸酯的压电/电致伸缩组分和含有8质量％以下硅酸的0.5〜5质量％的玻璃成分。

公开(公告)号：US20060138900A1

公开(公告)日：2006-06-29

申请号：US11305661

申请日：2005-12-16

申请人： Tsutomu Nanataki ,  Mutsumi Kitagawa ,  Toshikatsu Kashiwaya

发明人： Tsutomu Nanataki ,  Mutsumi Kitagawa ,  Toshikatsu Kashiwaya

IPC分类号： H01L41/18

CPC分类号： B41J2/14233 ,  C04B35/493 ,  C04B2235/3206 ,  C04B2235/3251 ,  C04B2235/3279 ,  C04B2235/6025 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/787 ,  H01L41/083 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/273

摘要： There is disclosed a piezoelectric/electrostrictive body which has superior piezoelectric/electrostrictive properties and which exhibits a sufficient durability even in a case where a flexural displacement is repeated a large number of times. A piezoelectric/electrostrictive body 30 is constituted of a large number of crystal grains 31 having the piezoelectric/electrostrictive properties in the form of a film or a layer having one or more layers. A number ratio of crystal grains 32, a part of which is exposed to at least one of interfaces 35a, 35b between the bodies and the outside in a thickness direction, is 80% or more of a large number of crystal grains 31 observed in an arbitrary section in the thickness direction.

摘要翻译： 公开了一种具有优异的压电/电致伸缩性能的压电/电致伸缩体，并且即使在弯曲位移重复多次的情况下也显示出足够的耐久性。 压电/电致伸缩体30由具有一层或多层膜的压电/电致伸缩特性的多个晶粒31构成。 一部分暴露于主体和外部之间的至少一个界面35a，35b的厚度方向上的晶粒32的数量比为观察到大量晶粒31的80％以上 在厚度方向的任意部分。

公开(公告)号：US20060138899A1

公开(公告)日：2006-06-29

申请号：US11305660

申请日：2005-12-16

申请人： Tsutomu Nanataki ,  Mutsumi Kitagawa ,  Toshikatsu Kashiwaya

发明人： Tsutomu Nanataki ,  Mutsumi Kitagawa ,  Toshikatsu Kashiwaya

IPC分类号： H01L41/18

CPC分类号： H01L41/43 ,  B41J2/14233 ,  B41J2002/14258 ,  B41J2202/03 ,  C04B35/493 ,  C04B2235/3206 ,  C04B2235/3251 ,  C04B2235/3279 ,  C04B2235/787 ,  H01L41/083 ,  H01L41/0831 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/314

摘要： There is disclosed a piezoelectric/electrostrictive body which has superior piezoelectric/electrostrictive properties and which exhibits a sufficient durability even in a case where a flexural displacement is repeated a large number of times. A piezoelectric/electrostrictive body is constituted of a large number of crystal grains having the piezoelectric/electrostrictive properties in the form of a film or a layer having one or more layers. A number ratio of crystal grains whose grain diameters W in a width direction are longer than grain diameters T in a thickness direction is 70% or more of a large number of crystal grains observed in an arbitrary section in the thickness direction.

摘要翻译： 公开了一种具有优异的压电/电致伸缩性能的压电/电致伸缩体，并且即使在弯曲位移重复多次的情况下也显示出足够的耐久性。 压电/电致伸缩体由具有一层或多层薄膜或层的压电/电致伸缩特性的大量晶粒构成。 晶粒直径W在宽度方向上比晶粒直径T在厚度方向上长的晶粒的数量比在厚度方向的任意部分观察到大量晶粒的70％以上。

公开(公告)号：US07417361B2

公开(公告)日：2008-08-26

申请号：US11305661

申请日：2005-12-16

申请人： Tsutomu Nanataki ,  Mutsumi Kitagawa ,  Toshikatsu Kashiwaya

发明人： Tsutomu Nanataki ,  Mutsumi Kitagawa ,  Toshikatsu Kashiwaya

IPC分类号： H01L41/187

CPC分类号： B41J2/14233 ,  C04B35/493 ,  C04B2235/3206 ,  C04B2235/3251 ,  C04B2235/3279 ,  C04B2235/6025 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/787 ,  H01L41/083 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/273

摘要： There is disclosed a piezoelectric/electrostrictive body which has superior piezoelectric/electrostrictive properties and which exhibits a sufficient durability even in a case where a flexural displacement is repeated a large number of times. A piezoelectric/electrostrictive body 30 is constituted of a large number of crystal grains 31 having the piezoelectric/electrostrictive properties in the form of a film or a layer having one or more layers. A number ratio of crystal grains 32, a part of which is exposed to at least one of interfaces 35a, 35b between the bodies and the outside in a thickness direction, is 80% or more of a large number of crystal grains 31 observed in an arbitrary section in the thickness direction.

摘要翻译： 公开了一种具有优异的压电/电致伸缩性能的压电/电致伸缩体，并且即使在弯曲位移重复多次的情况下也显示出足够的耐久性。 压电/电致伸缩体30由具有一层或多层膜的压电/电致伸缩特性的多个晶粒31构成。 一部分暴露于主体和外部之间的至少一个界面35a，35b的厚度方向上的晶粒32的数量比为观察到大量晶粒31的80％以上 在厚度方向的任意部分。

公开(公告)号：US07414352B2

公开(公告)日：2008-08-19

申请号：US11305660

申请日：2005-12-16

申请人： Tsutomu Nanataki ,  Mutsumi Kitagawa ,  Toshikatsu Kashiwaya

发明人： Tsutomu Nanataki ,  Mutsumi Kitagawa ,  Toshikatsu Kashiwaya

IPC分类号： H01L41/187

CPC分类号： H01L41/43 ,  B41J2/14233 ,  B41J2002/14258 ,  B41J2202/03 ,  C04B35/493 ,  C04B2235/3206 ,  C04B2235/3251 ,  C04B2235/3279 ,  C04B2235/787 ,  H01L41/083 ,  H01L41/0831 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/314

摘要： There is disclosed a piezoelectric/electrostrictive body which has superior piezoelectric/electrostrictive properties and which exhibits a sufficient durability even in a case where a flexural displacement is repeated a large number of times. A piezoelectric/electrostrictive body is constituted of a large number of crystal grains having the piezoelectric/electrostrictive properties in the form of a film or a layer having one or more layers. A number ratio of crystal grains whose grain diameters W in a width direction are longer than grain diameters T in a thickness direction is 70% or more of a large number of crystal grains observed in an arbitrary section in the thickness direction.

摘要翻译： 公开了一种具有优异的压电/电致伸缩性能的压电/电致伸缩体，并且即使在弯曲位移重复多次的情况下也显示出足够的耐久性。 压电/电致伸缩体由具有一层或多层薄膜或层的压电/电致伸缩特性的大量晶粒构成。 晶粒直径W在宽度方向上比晶粒直径T在厚度方向上长的晶粒的数量比在厚度方向的任意部分观察到大量晶粒的70％以上。

公开(公告)号：US5668071A

公开(公告)日：1997-09-16

申请号：US604712

申请日：1996-02-21

申请人： Toshikatsu Kashiwaya ,  Hirofumi Yamaguchi ,  Tadashi Otagiri

发明人： Toshikatsu Kashiwaya ,  Hirofumi Yamaguchi ,  Tadashi Otagiri

IPC分类号： C04B35/493 ,  H01L41/187 ,  C04B35/472 ,  C04B35/499

CPC分类号： C04B35/493 ,  H01L41/187

摘要： The present invention includes the following three types of piezoelectric porcelains. (1) In a piezoelectric porcelain having a composition of aPb[Mg.sub.1-X Ni.sub.X).sub.1/3 (Nb.sub.1-Y Ta.sub.Y).sub.2/3 ]O.sub.3 -bPbTiO.sub.3 -cPbZrO.sub.3, the coefficients a, b and c (mol %) and the substitution rate X satisfy all the following conditions; 15.ltoreq.a.ltoreq.45, 32.ltoreq.b.ltoreq.45, 10.ltoreq.c.ltoreq.50 and 0.1.ltoreq.X.ltoreq.0.9. (2) In a piezoelectric porcelain having a composition of aPb[Mg.sub.1-X Ni.sub.X).sub.1/3 (Nb.sub.1-Y Ta.sub.Y).sub.2/3 ]O.sub.3 -bPbTiO.sub.3 -cPbZrO.sub.3, the coefficients a, b and c (mol %) and the substitution rates X and Y satisfy all the following conditions; 15.ltoreq.a.ltoreq.45, 32.ltoreq.b.ltoreq.45, 10.ltoreq.c.ltoreq.50, 0.1.ltoreq.X.ltoreq.0.9, 0.1.ltoreq.Y.ltoreq.0.9 and Y-X.gtoreq.0.05. (3) In a piezoelectric porcelain having a composition of aPb[Mg.sub.1-X Ni.sub.X).sub.1/3 (Nb.sub.1-Y Ta.sub.Y).sub.2/3 ]O.sub.3 -bPbTiO.sub.3 -cPbZrO.sub.3, the coefficients a, b and c (mol %) and the substitution rates X and Y satisfy all the following conditions; 15.ltoreq.a.ltoreq.45, 32.ltoreq.b.ltoreq.45, 10.ltoreq.c.ltoreq.50, 0.2.ltoreq.X.ltoreq.0.9, 0.2.ltoreq.Y.ltoreq.0.9 and X-Y.gtoreq.0.05.

摘要翻译： 本发明包括以下三种类型的压电陶瓷。 （1）在具有组成为Pb [Mg1-XNiX] + E，fra1 / 3 + EE（Nb1-YTaY）+ E，fra2 / 3 + EE] O3-bPbTiO3-cPbZrO3的压电陶瓷中，系数a ，b和c（mol％），取代率X满足以下所有条件; 15 = = 0.05。 （3）在具有Pb [Mg1-XNiX] + E，fra1 / 3 + EE（Nb1-YTaY）+ E，fra2 / 3 + EE] O3-bPbTiO3-cPbZrO3组成的压电陶瓷中，系数a ，b和c（mol％），取代率X和Y满足以下所有条件; 15 / = 0.05。

公开(公告)号：US07511409B2

公开(公告)日：2009-03-31

申请号：US11210279

申请日：2005-08-23

申请人： Hirofumi Yamaguchi ,  Kei Sato ,  Toshikatsu Kashiwaya

发明人： Hirofumi Yamaguchi ,  Kei Sato ,  Toshikatsu Kashiwaya

IPC分类号： H01J1/14 ,  H01J1/05

CPC分类号： H01J1/312 ,  B82Y10/00 ,  C04B35/493 ,  C04B35/499 ,  C04B2235/3206 ,  C04B2235/3213 ,  C04B2235/3227 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3267 ,  C04B2235/3279 ,  C04B2235/3298 ,  C04B2235/5445 ,  C04B2235/76 ,  C04B2235/762 ,  C04B2235/765 ,  C04B2235/768 ,  C04B2235/79 ,  H01J2201/306 ,  H01J2201/3125 ,  H01J2329/00

摘要： Provided is a piezoelectric-film-type electron emitter which enables suppression of reduction of electron emission quantity due to repeated use thereof, and which exhibits high durability. The electron emitter includes a substrate; an emitter section formed of a dielectric material; a first electrode formed on the top surface of the emitter section; and a second electrode formed on the bottom surface of the emitter section. The dielectric material forming the emitter section contains a dielectric composition having an electric-field-induced strain (i.e., percent deformation under application of an electric field of 4 kV/mm, as measured in a direction perpendicular to the electric field) of 0.07% or less.

摘要翻译： 提供一种能够抑制由于其重复使用而导致的电子发射量减少的压电薄膜型电子发射体，其具有高耐久性。 电子发射体包括基板; 由电介质材料形成的发射极部分; 形成在所述发射部的上表面上的第一电极; 以及形成在发射极部分的底表面上的第二电极。 形成发射极部分的电介质材料包含具有电场诱发应变的电介质组合物（即在垂直于电场的方向上测量的4kV / mm的电场施加下的百分比变形）为0.07％ 或更少。

公开(公告)号：US07276462B2

公开(公告)日：2007-10-02

申请号：US11209332

申请日：2005-08-23

申请人： Hirofumi Yamaguchi ,  Kei Sato ,  Toshikatsu Kashiwaya

发明人： Hirofumi Yamaguchi ,  Kei Sato ,  Toshikatsu Kashiwaya

IPC分类号： C04B35/491 ,  H01L41/04

CPC分类号： H01J1/312 ,  B82Y10/00 ,  C04B35/493 ,  C04B35/499 ,  C04B2235/3206 ,  C04B2235/3213 ,  C04B2235/3255 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3267 ,  C04B2235/3279 ,  C04B2235/3298 ,  C04B2235/5445 ,  C04B2235/768 ,  C04B2235/79 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/3125 ,  H01J2201/317 ,  H01J2329/0484 ,  H01J2329/0492

摘要： Provided is a dielectric composition which, when applied to an electron emitter, enables suppression of reduction of electron emission quantity with passage of time. The dielectric composition contains, as a primary component, a PMN-PZ-PT ternary solid solution composition represented by the following formula PbxBip(Mgy/3Nb2/3)aTib-zMzZrcO3 [wherein x, p, and y satisfy the following relations: 0.85≦x≦1.05, 0.02≦p≦0.1, and 0.8≦y≦1.0; a, b, and c are decimal numbers falling within a region formed by connecting the following five points (0.550, 0.425, 0.025), (0.550, 0.150, 0.300), (0.100, 0.150, 0.750), (0.100, 0.525, 0.375), and (0.375, 0.425, 0.200); z satisfies the following relation: 0.02≦z≦0.10; and M is at least one element selected from among Nb, Ta, Mo, and W], and contains Ni in an amount of 0.05 to 2.0 wt. % as reduced to NiO.

摘要翻译： 提供一种当应用于电子发射体时能够抑制电子发射量随时间的减少的电介质组合物。 电介质组合物含有作为主要成分的由下式表示的PMN-PZ-PT三元固溶体组合物Pb（Mg y / y） 3 Nb 2/3 3）a z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / 其中x，p和y满足以下关系：0.85 <= x <= 1.05,0.02 <= p <= 0.1，0.8 <= y <= 1.0; a，b，c是分别连接以下五个点（0.550,0.425,0.025），（0.550,0.150,0.300），（0.100,0.150,0.7050），（0.100,0.525,0.375），（0.100,0.525,0.375）， ）和（0.375,0.425,0.200）; z满足以下关系：0.02 <= z <= 0.10; 并且M是选自Nb，Ta，Mo和W中的至少一种元素，并且含有0.05-2.0重量％的Ni。 ％减少到NiO。