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公开(公告)号:US11718924B2
公开(公告)日:2023-08-08
申请号:US16505431
申请日:2019-07-08
Applicant: Lawrence Livermore National Security, LLC
Inventor: Klint Aaron Rose , Joshua D. Kuntz , Marcus A. Worsley
CPC classification number: C25D13/02 , B32B15/00 , B33Y10/00 , C04B37/001 , C04B37/025 , C25D13/12 , C25D13/20 , C25D13/22 , C04B2235/5296 , C04B2235/775 , C04B2235/787 , C04B2235/9653 , C04B2237/083 , C04B2237/32 , C04B2237/402 , Y10T428/12458 , Y10T428/24802 , Y10T428/24992 , Y10T428/252
Abstract: A method for forming a ceramic according to one embodiment includes electrophoretically depositing a plurality of layers of particles of a non-cubic material. The particles of the deposited non-cubic material are oriented in a common direction.
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公开(公告)号:US20180301284A1
公开(公告)日:2018-10-18
申请号:US15938616
申请日:2018-03-28
Applicant: TDK CORPORATION
Inventor: Takeshi SHIBAHARA , Yuki NAGAMINE , Yoshitomo TANAKA , Kumiko YAMAZAKI
IPC: H01G4/33 , H01L49/02 , H01G4/08 , C01B21/082
CPC classification number: H01G4/33 , C01B21/0821 , C01P2002/60 , C01P2002/78 , C01P2006/40 , C04B35/495 , C04B35/58007 , C04B35/6262 , C04B2235/3201 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3232 , C04B2235/3251 , C04B2235/3258 , C04B2235/77 , C04B2235/781 , C04B2235/787 , H01G4/085 , H01G4/1218 , H01G4/1272 , H01G4/306 , H01L28/55
Abstract: The object of the present invention is to provide a dielectric thin film and a capacitance element having excellent dielectric property.A dielectric thin film comprising a main component comprised of an oxynitride expressed by a compositional formula of AaBbOoNn (a+b+o+n=5), wherein said “A” is one or more selected from the group consisting of Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, said “B” is one or more selected from the group consisting of Ta, Nb, Ti, and W, and crystalline particles constituting said dielectric thin film are polycrystalline which are not aligned to a particular crystal plane orientation, and a size of a crystallite of the crystalline particles included in the dielectric thin film is 100 nm or less.
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公开(公告)号:US10052848B2
公开(公告)日:2018-08-21
申请号:US13783262
申请日:2013-03-02
Applicant: Apple Inc.
Inventor: Christopher D. Prest , Dale N. Memering , David A. Pakula , Richard Hung Minh Dinh , Vincent Yan , Jason Huey
IPC: C30B33/06 , C30B29/30 , B32B9/00 , B32B3/02 , B32B7/00 , B32B18/00 , B32B7/02 , B32B17/10 , C04B35/115 , C03C27/00 , C04B37/00 , C04B37/04 , C30B29/20
CPC classification number: B32B9/002 , B32B3/02 , B32B7/00 , B32B7/02 , B32B17/10 , B32B17/10045 , B32B17/10119 , B32B17/10733 , B32B18/00 , B32B2307/412 , C03C27/00 , C04B35/115 , C04B37/001 , C04B37/008 , C04B37/047 , C04B2235/76 , C04B2235/787 , C04B2237/343 , C04B2237/52 , C04B2237/704 , C30B29/20 , C30B33/06 , Y10T428/24488
Abstract: Various sapphire and laminate structures are discussed herein. One embodiment may take the form of a sapphire structure having a first sapphire sheet with a first sapphire plane type forming the major surface and a second sapphire sheet having a second different sapphire plane type forming the major surface. The first and second sapphire sheets are fused together to form the sapphire structure.
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公开(公告)号:US20180230020A1
公开(公告)日:2018-08-16
申请号:US15909002
申请日:2018-03-01
Applicant: NGK INSULATORS, LTD.
Inventor: Kiyoshi MATSUSHIMA , Morimichi Watanabe , Kei Sato , Tsutomu Nanataki
IPC: C01F7/02
CPC classification number: C01F7/02 , C01P2002/60 , C01P2002/72 , C01P2002/80 , C01P2004/02 , C01P2006/16 , C04B35/115 , C04B35/632 , C04B35/6342 , C04B35/638 , C04B35/645 , C04B2235/3206 , C04B2235/5292 , C04B2235/5296 , C04B2235/5436 , C04B2235/5445 , C04B2235/5472 , C04B2235/6025 , C04B2235/6567 , C04B2235/6586 , C04B2235/72 , C04B2235/724 , C04B2235/786 , C04B2235/787 , G02B1/02 , H01L33/007 , H01L33/0087
Abstract: An alumina sintered body of the present invention has a degree of c-plane orientation of 5% or more, which is determined by a Lotgering method using an X-ray diffraction profile in a range of 2θ=20° to 70° obtained under X-ray irradiation, and an XRC half width of 15.0° or less in rocking curve measurement, an F content of less than 0.99 mass ppm when measured by D-SIMS, a crystal grain diameter of 15 to 200 μm, and 25 or less pores having a diameter of 0.2 μm to 1.0 μm when a photograph of a viewing area 370.0 μm in a vertical direction and 372.0 μm in a horizontal direction taken at a magnification factor of 1000 is visually observed.
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公开(公告)号:US10017427B2
公开(公告)日:2018-07-10
申请号:US14650486
申请日:2013-12-06
Applicant: SAINT-GOBAIN CENTRE DE RECHERCHES ET D'ETUDES EUROPEEN , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
Inventor: Sylvain Deville , Florian Bouville
IPC: B28B1/00 , C04B38/00 , C04B38/04 , C04B35/10 , C04B35/26 , C04B35/472 , C04B35/495 , C04B35/497 , C04B35/499 , C04B35/52 , C04B35/583 , C04B35/626 , C04B35/634 , C04B111/00
CPC classification number: C04B38/0061 , B28B1/007 , C04B35/10 , C04B35/111 , C04B35/26 , C04B35/472 , C04B35/495 , C04B35/497 , C04B35/499 , C04B35/52 , C04B35/522 , C04B35/583 , C04B35/62655 , C04B35/63488 , C04B38/00 , C04B38/04 , C04B2111/0037 , C04B2235/3201 , C04B2235/3206 , C04B2235/3217 , C04B2235/3244 , C04B2235/3251 , C04B2235/3255 , C04B2235/3272 , C04B2235/3281 , C04B2235/3296 , C04B2235/3298 , C04B2235/3418 , C04B2235/386 , C04B2235/425 , C04B2235/449 , C04B2235/5292 , C04B2235/5296 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/5463 , C04B2235/5472 , C04B2235/604 , C04B2235/666 , C04B2235/767 , C04B2235/77 , C04B2235/787 , C04B2235/788 , C04B2235/9607 , Y10T428/24744 , C04B38/0051
Abstract: Preparation of a slip including more than 4% and less than 50% of ceramic particles and including more than 1% of orientable ceramic particles made of a material including an oriented function, as volume percentage on the basis of the set of ceramic particles, wherein the fraction of non-orientable ceramic particles has a median length less than ten times the median length of the orientable ceramic particles if the set of ceramic particles includes less than 80%, as volume percentage, of orientable ceramic particles, oriented freezing of the slip by movement of a solidification front at a speed less than the speed of encapsulation of the ceramic particles; elimination of the crystals of solidified liquid phase of said block, optionally, sintering.
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公开(公告)号:US10011111B2
公开(公告)日:2018-07-03
申请号:US15439564
申请日:2017-02-22
Applicant: FUJIFILM Corporation
Inventor: Naoki Murakami , Takami Arakawa , Takamichi Fujii
IPC: H01L41/187 , B41J2/14 , B41J2/16 , C23C14/34 , C23C14/08 , H01L41/047 , H01L41/18 , C23C14/00 , H01L41/00
CPC classification number: B41J2/14209 , B41J2/14233 , B41J2/1607 , B41J2/1646 , C01G33/00 , C01P2002/34 , C01P2002/72 , C04B35/493 , C04B2235/3251 , C04B2235/76 , C04B2235/765 , C04B2235/768 , C04B2235/787 , C23C14/00 , C23C14/08 , C23C14/088 , C23C14/3471 , H01L41/00 , H01L41/047 , H01L41/0805 , H01L41/0973 , H01L41/183 , H01L41/1876 , H01L41/316
Abstract: A piezoelectric film of the present invention is a piezoelectric film including a perovskite oxide represented by the following formula (P), in which crystal phases of the perovskite oxide include tetragonal crystals and rhombohedral crystals at a ratio that satisfies the following formula (1). A1+δ[(ZrxTi1−x)1−aNba]Oy (P) 0.70≤rhombohedral crystals/(rhombohedral crystals+tetragonal crystals)≤0.95 (1), where, in the formula (P), A is an A-site element primarily containing Pb, and Zr, Ti, and Nb are B-site elements. x is equal to or higher than 0.4 and lower than 1, excluding x of equal to or higher than 0.51 and equal to or lower than 0.53. a is equal to or higher than 0.08.
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公开(公告)号:US10002714B2
公开(公告)日:2018-06-19
申请号:US15134799
申请日:2016-04-21
Applicant: TDK Corporation
Inventor: Saori Takeda , Masahito Furukawa , Masanori Kosuda , Shirou Ootsuki , Yasunori Harada
IPC: H01G4/33 , H01G4/12 , H01G4/08 , C04B35/468 , C04B35/622 , C04B35/626 , C23C14/08
CPC classification number: H01G4/33 , C04B35/4682 , C04B35/62218 , C04B35/6261 , C04B2235/3208 , C04B2235/3217 , C04B2235/3224 , C04B2235/3241 , C04B2235/3244 , C04B2235/3262 , C04B2235/3281 , C04B2235/3286 , C04B2235/604 , C04B2235/6567 , C04B2235/787 , C04B2235/788 , C04B2235/79 , C23C14/088 , H01G4/085 , H01G4/1227 , H01G4/1245
Abstract: The present invention relates to a dielectric element such as a thin-film capacitor including a dielectric film. The dielectric film contains a main component represented by the general formula (Ba1-xCax)z(Ti1-yZry)O3 wherein 0
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公开(公告)号:US09938393B2
公开(公告)日:2018-04-10
申请号:US15003915
申请日:2016-01-22
Applicant: FREE FORM FIBERS, LLC
Inventor: John L. Schneiter , Joseph Pegna , Ramkiran Goduguchinta , Kirk L. Williams , Shay Llewellyn Harrison
CPC classification number: C08K3/38 , C04B35/62277 , C04B35/62281 , C04B35/80 , C04B2235/5264 , C04B2235/781 , C04B2235/787
Abstract: A fully dense ceramic and/or other inorganic fiber containing elongated crystal grains in and around the fiber center and oriented along the fiber axis, with a smooth transition to more equiaxed grains towards the radial periphery of the fiber, and method for producing such.
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公开(公告)号:US09929074B2
公开(公告)日:2018-03-27
申请号:US15118961
申请日:2015-01-15
Applicant: KANEKA CORPORATION
Inventor: Makoto Kutsumizu , Yusuke Kato , Yasushi Nishikawa , Yusuke Ohta
CPC classification number: H01L23/3735 , B32B18/00 , C01B32/20 , C01P2004/20 , C01P2006/12 , C01P2006/82 , C04B35/522 , C04B2235/787 , C04B2237/363 , C04B2237/704 , C04B2237/82 , H01L21/4803 , H01L23/373 , H01L23/42 , H01L2924/0002 , H01L2924/00
Abstract: Use of highly oriented graphite including graphite layers placed on top of one another and containing only a small amount of water allows for production of an electronic device that includes, as an element, highly oriented graphite in which no delamination occurs, that is highly reliable in use, and that has a good heat dissipation capability.
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公开(公告)号:US20180056435A1
公开(公告)日:2018-03-01
申请号:US15684455
申请日:2017-08-23
Applicant: University of Connecticut
Inventor: Leila Ladani
IPC: B23K15/00 , C01B32/162 , C01B32/168 , C04B35/80 , C04B35/628 , C04B35/653 , C08J5/00 , B28B1/00 , B33Y10/00 , B33Y80/00 , B29C64/153 , B23K26/342
CPC classification number: B23K15/0086 , B23K26/342 , B28B1/001 , B29C64/153 , B29L2031/3406 , B33Y10/00 , B33Y80/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B32/168 , C04B35/62218 , C04B35/62844 , C04B35/653 , C04B35/80 , C04B2235/5248 , C04B2235/5288 , C04B2235/6026 , C04B2235/616 , C04B2235/77 , C04B2235/787 , C08J5/005 , C08J5/042 , C08J2300/22 , C23C14/18 , C23C16/06 , C23C16/26 , H01L21/4871 , H01L23/373 , H01L23/3736 , H01L23/481 , H01L23/53276 , Y10S977/748 , Y10S977/753 , Y10S977/843 , Y10S977/847 , Y10S977/932
Abstract: The present invention relates, generally, to methods for manufacturing metal/polymer/ceramic carbon nanotube composite materials, including additive manufacturing techniques, more particularly, to a method for manufacturing metal-carbon nanotube composite comprising adding metal layer to nanotubes to make a nano-composite.
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