公开(公告)号：US20230352565A1

公开(公告)日：2023-11-02

申请号：US18218599

申请日：2023-07-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Te-Chang Hsu ,  Chun-Chia Chen ,  Yao-Jhan Wang ,  Chun-Jen Huang

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/49 ,  H01L21/768 ,  H01L21/28 ,  H01L21/8238

CPC classification number: H01L29/6656 ,  H01L29/66795 ,  H01L29/66545 ,  H01L29/6653 ,  H01L29/7851 ,  H01L29/4983 ,  H01L29/4966 ,  H01L21/76834 ,  H01L29/4958 ,  H01L21/28247 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/823821 ,  H01L29/7848 ,  H01L29/0847

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a spacer around the gate structure; forming a first contact etch stop layer (CESL) around the spacer; forming a mask layer on the first CESL; removing part of the mask layer; removing part of the first CESL; forming a second CESL on the mask layer and the gate structure; and removing part of the second CESL.

公开(公告)号：US10700163B2

公开(公告)日：2020-06-30

申请号：US16194379

申请日：2018-11-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Te-Chang Hsu ,  Che-Hsien Lin ,  Cheng-Yeh Huang ,  Chun-Jen Huang ,  Yu-Chih Su ,  Yao-Jhan Wang

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66 ,  H01L21/3213 ,  H01L21/311 ,  H01L29/78

Abstract: A manufacturing method of a semiconductor device includes the following steps. A semiconductor substrate with gate structures formed thereon is provided. A source/drain region is formed in the semiconductor substrate and formed between the gate structures. A dielectric layer is formed on the source/drain region and located between the gate structures. An opening penetrating the dielectric layer on the source/drain region is formed. A lower portion of a first conductive structure is formed in the opening. A dielectric spacer is formed on the lower portion and on an inner wall of the opening. An upper portion of the first conductive structure is formed in the opening and on the lower portion. The dielectric spacer surrounds the upper portion of the first conductive structure. The first conductive structure is formed by two steps for forming the dielectric spacer surrounding the upper portion and improving the electrical performance of the semiconductor device.

公开(公告)号：US10608113B1

公开(公告)日：2020-03-31

申请号：US16162356

申请日：2018-10-16

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Cheng-Yeh Huang ,  Te-Chang Hsu ,  Chun-Jen Huang ,  Che-Hsien Lin ,  Yao-Jhan Wang

IPC: H01L21/762 ,  H01L29/66 ,  H01L29/78 ,  H01L29/04 ,  H01L29/10 ,  H01L21/324 ,  H01L29/51 ,  H01L29/49 ,  H01L21/768 ,  H01L29/161

Abstract: A semiconductor structure includes a semiconductor substrate, at least a silicon germanium (SiGe) epitaxial region disposed in the semiconductor substrate, and a contact structure disposed on the SiGe epitaxial region. The contact structure includes a titanium nitride (TiN) barrier layer and a metal layer surrounded by the TiN barrier layer. A crystalline titanium germanosilicide stressor layer is disposed in the SiGe epitaxial region and between the TiN barrier layer and the SiGe epitaxial region.