公开(公告)号：US20160126331A1

公开(公告)日：2016-05-05

申请号：US14554068

申请日：2014-11-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chi-Ju Lee ,  Yao-Chang Wang ,  Nien-Ting Ho ,  Chi-Mao Hsu ,  Kuan-Cheng Su ,  Main-Gwo Chen ,  Hsiao-Kwang Yang ,  Fang-Hong Yao ,  Sheng-Huei Dai ,  Tzung-Lin Li

IPC: H01L29/423 ,  H01L21/02 ,  H01L21/28 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/42376 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02194 ,  H01L21/02244 ,  H01L21/02255 ,  H01L21/28079 ,  H01L21/28088 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/78

Abstract: The present invention provides a metal gate structure which is formed in a trench of a dielectric layer. The metal gate structure includes a work function metal layer and a metal layer. The work function metal layer is disposed in the trench and comprises a bottom portion and a side portion, wherein a ratio between a thickness of the bottom portion and a thickness of the side portion is between 2 and 5. The trench is filled with the metal layer. The present invention further provides a method of forming the metal gate structure.

Abstract translation: 本发明提供了形成在电介质层的沟槽中的金属栅极结构。 金属栅极结构包括功函数金属层和金属层。 工作功能金属层设置在沟槽中，并且包括底部和侧部，其中底部的厚度和侧部的厚度之间的比率在2-5之间。沟槽填充有金属 层。 本发明还提供一种形成金属栅极结构的方法。